[1] | Ahirwar, P; Rotter, T; Shima, Darryl; Jahan, N; Clark, S; Addamane, S; Balakrishnan, Ganesh;Laurain, Alexandre; Hader, Jorg; Lai, Y; “Growth and optimization of 2 μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.2013, IEEE. |
[2] | Ahirwar, P; Clark, SPR; Patel, V; Rotter, TJ; Hains, C; Albrecht, A; Dawson, LR; Balakrishnan, G;“Perforated (In) GaSb quantum wells on GaSb substrates through the use of As 2 based in situ etches”,Journal of Vacuum Science & Technology B: |
[3] | Schuler-Sandy, T; Myers, S; Klein, B; Gautam, N; Ahirwar, P; Tian, Z-B; Rotter, T; Balakrishnan, G; Plis, E; Krishna, S; ",Gallium free type II InAs/InAsxSb1-x superlattice photodetectors,Applied Physics Letters,101,7,071111,2012, AIP Publishing. |
[4] | Husaini, S; Shima, D; Ahirwar, P; Rotter, TJ; Hains, CP; Dang, T; Bedford, RG; Balakrishnan, G; “Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflecto ”,Applied Physics Letters, 102, 6, 063108, 2013, AIP Publishing. |