International Journal of Optoelectronic Engineering

International Journal of Optoelectronic Engineering is a peer-reviewed journal mainly publishing the innovative academic thesis, the research note, the research letter in the field of optics and electronics. The journal aims at providing an emerging platform for publication of original research so that the engineers can exchange and share professional, technical and academic knowledge on any aspect of optoelectronic engineering discipline.


Pankaj Ahirwar

Engineer, University of New Mexico, USA

Research Areas

Semiconductor Physics, Optoelectronics,Semiconductor Lasers, Midinfrared Optoelectronics, Antimonide lasers, Molecular beam epitaxy,Solar cells, detectors, signal integrity, RF electronics,Material Science, SEM, AFM, Xray Diffraction,Crystal structure,VLSI, low power design

Education

2008-2013PhDUniversity of New Mexico
2001-2005BSIndian Institute of Technology Roorkee

Experience

2013-PresentSenior Engineer (Signal Integrity) Marvell Semiconductos
2008-2013 Reasearch Assistant, University of New Mexico
2008-2008Design Engineer II, Freescale Semiconductors
2006-2008Design Engineer I, Texas Instruments

Publications: Journals

[1]  Ahirwar, P; Rotter, T; Shima, Darryl; Jahan, N; Clark, S; Addamane, S; Balakrishnan, Ganesh;Laurain, Alexandre; Hader, Jorg; Lai, Y; “Growth and optimization of 2 μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.2013, IEEE.
[2]  Ahirwar, P; Clark, SPR; Patel, V; Rotter, TJ; Hains, C; Albrecht, A; Dawson, LR; Balakrishnan, G;“Perforated (In) GaSb quantum wells on GaSb substrates through the use of As 2 based in situ etches”,Journal of Vacuum Science & Technology B:
[3]  Schuler-Sandy, T; Myers, S; Klein, B; Gautam, N; Ahirwar, P; Tian, Z-B; Rotter, T; Balakrishnan, G; Plis, E; Krishna, S; ",Gallium free type II InAs/InAsxSb1-x superlattice photodetectors,Applied Physics Letters,101,7,071111,2012, AIP Publishing.
[4]  Husaini, S; Shima, D; Ahirwar, P; Rotter, TJ; Hains, CP; Dang, T; Bedford, RG; Balakrishnan, G; “Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflecto ”,Applied Physics Letters, 102, 6, 063108, 2013, AIP Publishing.

Publications: Conferences/Workshops/Symposiums

[1]  P. Ahirwar et. Al. “TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance.”Presented at SPIE Photonics West 2013, San Francisco, CA.
[2]  P. Ahirwar et. al “Transmission Electron Microscopy Study of Metamorphic III-Sb VECSELs on GaAs/AlGaAs,Distributed Bragg Reflectors”, presented at the IEEE Photonics conference (IEEE-IPC 2013), Burlingame, CA, 2012.
[3]  P. Ahirwar et. al. “Growth and Characterization of Quinternary Barriers (AlzInyGa1-z-yAsxSb1-x) for Type I Mid-Infrared (2-5 μm) Lasers”, presented at the 54th Electronics Materials conference (EMC-2012), State College, PA.
[4]  P. Ahirwar, et. al., “Growth of III-Sb VECSELs for high-power continuous wave operation”, presented at the 53rd Electronics Materials Conference (EMC), Santa Barbara, CA, 2011.
[5]  Stephen Clark, P. Ahirwar, et. al., “Growth and characterization of AlInSb metamorphic buffers on GaSb and GaAs substrates for the growth of MWIR lasers”, presented at the 53rd Electronics Materials Conference (EMC),Santa Barbara, CA, 2011.
[6]  P. Ahirwar, et. al., “MBE Growth of Quintinary Barriers for Long Wavelength (3-3.5 μm) VECSELs on GaAs/AlGaAs DBRs”, presented at 27th North American Molecular Beam Epitaxy Conference) Breckenridge,Colorado.