[1] | Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm H. F. Liu*, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, and D. Z. Chi, J. Appl. Phys., 110, 06xxxx in press (2011). |
[2] | Deposition and characterizations of ZnO thin films on Al2O3 (0001) substrates with III-arsenide intermediating layers H. F. Liu*, S. J. Chua, G. X. Hu, and H. Gong, Open Appl. Phys. J. 4, 41 (2011). |
[3] | Metal-nanoparticles-coating-induced enhancement and weakening of resonant Raman scattering in ZnO: Effect of surface-electric field H. F. Liu*, A. Huang, S. Tripathy, and S. J. Chua, J. Raman Spectrosc. Rapid communication, in press, online: April 2011. |
[4] | Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering H. F. Liu* and S. J. Chua, J. Cryst. Growth, 324, 31 (2011). |
[5] | Anomalous temperature-dependency of phonon linewidths probed by Raman scattering from β-FeSi2 thin films H. F. Liu*, A. Huang, and D. Z. Chi, J. Appl. Phys., 109, 083538 (2011). |
[6] | Fabrication and transfer of nanoporous alumina thin films for templating applications: Metal dots array deposition and porous ZnO film growth H. F. Liu*, E. S. Lim, P. K. H. Tung, and N. Xiang, Thin Solid Films 519, 3050, (2011). |
[7] | Thermal annealing of nanocrystallite Fe3S4 films deposited on Si substrates by dc-magnetron sputtering at room temperature H. F. Liu*, A. Huang, and D. Z. Chi, J. Phys. D: Appl. Phys., 43, 455405 (2010). |
[8] | Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c-and r-sapphire substrates employing ZnO sacrificial templates H. F. Liu*, W. Liu, and S. J. Chua, J. Vac. Sci. Technol. A, 28, 590 (2010). |
[9] | Phosphorus doping behavior in ZnO thin films: effects of doping concentration and post-growth thermal annealing H. F. Liu* and S. J. Chua, Appl. Phys. Lett., 96, 091902 (2010). No. 15 of the Top 20 Most Downloaded Articles during the month. |
[10] | Evolution of resonant Raman scattering spectra of ZnO crystallites upon post-growth thermal annealing H. F. Liu*, S. J. Chua, G. X. Hu, and H. Gong, J. Cryst. Growth., 312, 527 (2010). |
[11] | Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3 (0001) thin films grown by RF-magnetron sputtering H. F. Liu* and S. J. Chua, J. Appl. Phys., 106, 032511 (2009). |
[12] | Surface optical phonon and A1(LO) in ZnO submicron crystals: effects of morphology and dielectric coating H. F. Liu*, S. Tripathy, G. X. Hu, and H. Gong, J. Appl. Phys., 105, 053507 (2009). |
[13] | Growth mechanism and optical properties of In2O3 nanorods synthesized on ZnO/GaAs(111) substrate H. F. Liu*, G. X. Hu, and H. Gong, J. Cryst. Growth., 311, 268 (2009). |
[14] | Effect of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructures H. F. Liu*, G. X. Hu, H. Gong, K. Y. Zang, and S. J. Chua, J. Vac. Sci. Technol. A 26, 1462 (2008). No. 3 of the Top 20 Most Downloaded Articles during the month. |
[15] | Observation of interfacial reactions and recrystallization of extrinsic phases in epitaxial grown ZnO/GaAs heterostructures H. F. Liu*, A. S. W. Wong, G. X. Hu, and H. Gong, J. Cryst. Growth., Priority communication, 310, 4305 (2008). |
[16] | Effects of substrate on the structure and orientation of ZnO thin-film grown by RF-magnetron sputtering H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong, and N. Xiang, J. Appl. Phys., 102, 083529 (2007). No. 18 of the Top 20 Most Downloaded Articles during the month. |
[17] | Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by RF-magnetron sputtering on GaAs (001) substrates H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong and N. Xiang, J. Appl. Phys., 102, 063507 (2007). |
[18] | Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film H. F. Liu*, S. J. Chua, G. X. Hu, H. Gong and N. Xiang, J. Appl. Phys., 102, 043530 (2007). |
[19] | On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy H. F. Liu*, S. J. Chua and N. Xiang, J. Appl. Phys., 102, 013504 (2007). |
[20] | Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells H. F. Liu* and N. Xiang, Thin Solid Film 515, 4462 (2007). |
[21] | Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy H. F. Liu*, N. Xiang, H. L. Zhou, S. J. Chua, P. Yang, and H. Moser, J. Crystal Growth 301-302 548 (2007). |
[22] | Growth temperature-and thermal anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy H. F. Liu*, S. J. Chua and N. Xiang, J. Appl. Phys., 101, 053510 (2007). |
[23] | Growth of InAs on micro-and nano-scale patterned GaAs (001) substrates by molecular beam epitaxy H. F. Liu*, N. Xiang and S. J. Chua, Nanotechnology, 17, 5278 (2006). |
[24] | Effect of indium segregation on the optical and structural properties of GaInNAs/GaAs quantum well at emission wavelength of 1.3-μm H. F. Liu*, V. Dixit, and N. Xiang, J. Appl. Phys., 100, 083518 (2006). |
[25] | Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1-x H. F. Liu*, N. Xiang, S. Tripathy, and S. J. Chua, J. Appl. Phys., 99, 103503 (2006). |
[26] | Influence of N incorporation on In content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy H. F. Liu*, N. Xiang, and S. J. Chua, Appl. Phys. Lett., 89, 71905 (2006). |
[27] | Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum-wells upon post-growth annealing H. F. Liu*, N. Xiang, S. J. Chua, and M. Pessa, Appl. Phys. Lett., 88, 181912 (2006). |
[28] | Influence of GaNAs strain compensation layers on the properties of GaIn(N)As/GaAs quantum wells upon annealing H. F. Liu* and N. Xiang, J. Appl. Phys., 99, 53508 (2006). It has been selected for the March 20, 2006 issue of Virtual Journal of Nanoscale Science & Technology. |
[29] | Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular beam epitaxy H. F. Liu*, V. Dixit, and N. Xiang, J. Appl. Phys., 99, 13503 (2006). |
[30] | Annealing behavior of N-bonding configurations in GaN0.023As0.997 ternary alloy grown on GaAs (001) substrate by molecular beam epitaxy H. F. Liu*, N. Xiang, and S. J. Chua, J. Crystal Growth, 290, 24 (2006). |
[31] | Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy H. F. Liu*, N. Xiang, S. J. Chua, and S. Tripathy, J. Crystal Growth, 288, 44 (2006). |
[32] | Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy H. F. Liu*, N. Xiang, S. Tripathy, and S. J. Chua, Thin Solid Film, 515, 759 (2006). |
[33] | In-situ annealing effect on the surface and microscopic structure of near-surface GaInNAs/GaAs quantum wells grown by MBE H. F. Liu*, S. Karirinne, C. S. Peng, T. Jouhti, J. Konttinen and M. Pessa, J. Crystal Growth 263, 171 (2004). |
[34] | Influence of Nitride and Oxide cap layers upon the annealing of 1.3-mm GaInNAs/GaAs quantum wells H. F. Liu*, C. S. Peng, J. Likonen, T. Jouhti, S. Karirinne, and M. Pessa, J. Appl. Phys. 95, 4102 (2004). |
[35] | Annealing effect on the optical and structural properties of 1.3-mm GaInNAs/GaAs quantum-well samples capped with dielectric layers H. F. Liu*, C. S. Peng, E.-M. Pavelescu, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa Appl. Phys. Lett., 84, 478 (2004). |
[36] | Structure and optical properties of near-surface GaInNAs/GaAs quantum well at emission wavelength of 1.3 mm H. F. Liu*, C. S. Peng, E.-M. Pavelescu, S. Karirinne, T. Jouhti, M. Valden and M. Pessa, Appl. Phys. Lett., 82, 2428 (2003). |
[37] | Effect of rapid thermal annealing on the structural characteristics of cubic GaN epilayers grown on GaAs (001) by MBE H. F. Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, J. Crystal Growth, 222, 503 (2001). |
[38] | MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates H. F. Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, N. Yang, Kun Tao, Y.J. Han, Y. Luo, J. Crystal Growth, 218, 191 (2000). |
[39] | Epitaxial growth of cubic and hexagonal GaN films on GaAs (001) substrates by MBE Liu Hongfei*, Chen Hong, Li Zhiqiang, Wan Li, Huang Qi, Zhou Junming, Luo Yi, HanYanjun, ACTA PHYSICA SINICA, 49, 1132 (2000). |
[40] | Growth and properties of hexagonal GaN on GaAs (001) substrate by RF-molecular beam epitaxy using an AlAs nucleation layer Hongfei Liu*, H. Chen, Zhiqiang Li, Li Wan, Q. Huang, Junming Zhou, N. Yang, Kun Tao, Y.J. Han, Y. Luo, J. Crystal Growth, 212, 391 (2000). |
[41] | Thermal annealing effect on 1.3 mm GaInNAs/GaAs quantum well structure capped with dielectric films H. F. Liu*, C. S. Peng, J. Likonen, J. Konttinen, V.D.S. Dhaka, N. Tkachenko, and M. Pessa, IEE Proc.-Optoelectron., 151, 267 (2004). |
[42] | Epitaxial growth and characterization of GaN films on (001) GaAs substrates by RF-MBE H. F. Liu*, H. Chen, Z. Q. Li, L. Wan, Q. Huang, and J. M. Zhou, J. Crystal Growth, 227-228, 390 (2001). |
[43] | Method for high-quality single crystal GaN-based nanobelts H. F. Liu*, W. Liu, S. J. Chua, and C. B. Soh, Singapore Patent, SG201104702-4, filed on July 04, 2011. |