| [1] | Ocak Yusuf Selim, Mustafa Kulakci, Turan Rasit, T.Kılıçoğlu, Ömer Güllü, Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction, Journal Of Alloys And Compounds, 509(23), 2011, 6631-6634. |
| [2] | Ö. Güllü, T. Kılıçoğlu, A. Türüt, Electronic Properties of The Metal/Organic Interlayer/Inorganic Semiconductor Sandwich Device, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 71, 3, 351-356, 2010. |
| [3] | K. Akkılıç, Y.S. Ocak, T. Kılıçoğlu, S. İlhan, H. Temel, Calculation of Current-voltage Characteristics of a Cu (II) Complex/N-Si/Ausb Schottky Diode, Current Applied Physics, 10 (2010) 337-341 |
| [4] | Y.S. Ocak, T. Kılıçoğlu, G. Topal, M.H. Başkan, 60Co-İrradiation Effects on Electrical Properties of a Rectifying Diode Based on a Novel Macrocyclic Zn Octaamide Complex, Nuclear Instruments and Methods in Physics Research Section A: 612 (2010) 360-366 |
| [5] | Ö.Güllü, S.Asubay, M.Biber, T.Kılıçoğlu and A.Türüt, Electrical Properties of Safranine T/p-Si Organic/Inorganic Semiconductor Devices, Eur. Phys. J. Appl. Phys. 50, 10401 (2010) |
| [6] | T. Kılıçoğlu, Y.S. Ocak, Electrical and photovoltaic properties of an organic-inorganic heterojunction based on a BODIPY dye, Microelectronic Engineering,(In Press, 2010) |
| [7] | Y.S.Ocak, M.A.Ebeoglu, G.Topal, T.Kılıçoğlu, Temperature dependent electrical characteristics of a Schottky diode obtained from a novel organometal Mn complex, Physica B: Condensed Matter, Volume 405, Issue 9, 1 May 2010, Pages 2329-2333 |
| [8] | Y.S.Ocak, M.F.Genisel, T.Kılıçoğlu,Ta/Si Schottky diodes fabricated by magnetron sputtering technique, Microelectronic Engineering, Volume 87, Issue 11, November 2010, Pages 2338-2342 |
| [9] | Y S Ocak, M kulakci, T kılıçoğlu, R. Turan, K. Akkılıç, Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode, 159 Synthetic Metals (2009) 1603-1607 |
| [10] | K.Akkılıç, Y.S.Ocak, S.İlhan,T.Kılıçoğlu, Effect of the Binuclear Cu (II) complex Interface Layer on the Calculation of Electronic Properties of Au/Cu (II) Complex/n-Si Organic-Inorganic Hybrid Heterojunction, Synthetic Metals, 158, (21-24), 969-972, (2008) |
| [11] | T.Kılıçoğlu, Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode, Thin Solid Films, 516,(6), 967-970, (2008) |
| [12] | K.Akkılıç, İ.Uzun, T.Kılıçoğlu, The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode, Synthetic Metals, 157(6-7), 297-302 (2007) |
| [13] | M.E.Aydın, F.Yakuphanoğlu, T.Kılıçoğlu, The Current-voltage and capacitance-voltage characteristics of molecularly modified beta-carotene/n-Type Si Junction Structure With Fluorescein Sodium Salt, Synthetic Metals, 157 (24), 1080-1084, (2007) |
| [14] | M.A. Ebeoğlu, T. Kılıçoğlu, M.E. Aydın, Low-And High-Frequency C-V Characteristics of the Contacts Formed By Adding a Solution of the Nonpolymeric Organic Compound on p-Type Si Substrate, Physica B: Condensed Matter, 395 (1-2), 3-97, (2007) |
| [15] | T. Kılıçoğlu, M.E. Aydın, Y.S. Ocak, The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method, Physica B: Condensed Matter, 388, Issues (1-2), 244-248 (2007) |
| [16] | T. Kılıçoğlu, M.E. Aydın, G. Topal, M.A. Ebeoğlu, H. Sayğılı, The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact, Synthetic Metals, 157(13-15), 540-545 (2007) |
| [17] | Aydın M.E., Kılıçoğlu T., Akkılıç K.,Hoşgören H., "The calculation of electronic parameters of a Au/ß-Carotene/n-Si Schottky barrier diode", Physica B, Condensed Matter, 381(1-2), 113-117 (2006) |
| [18] | F. Yakuphanoğlu, M. E. Aydın, T. Kılıçoğlu, Photovoltaic Properties of Au/betaCarotene/n-Si Organic Solar Cells, J. Phys. Chem. B, 110, 9782-9784, (2006) |
| [19] | K. Akkılıç, M.E. Aydın, İ. Uzun, T. Kılıçoğlu, The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode Synthetic Metals, 156, (14-15), 958-962 (2006) |
| [20] | Aydın M.E., Akkılıç K., Kılıçoğlu T., "The importance of the series resistance in calculating the characteristic parameters of the Schottky contacts ", Applied Surface Science, 253 (3), 1304-1309 (2006) |
| [21] | Kılıçoğlu T., Asubay S.,"The Effect of Native Oxide Layer on Some Electronic Parameters of Au/n-Si/Au-Sb Schottky Barrier diodes", Physica B, 368, 58-63, (2005) |
| [22] | Aydın M.E.,Akkılıç K., Kılıçoğlu T. Relationship Between Barrier Heights and Ideality Factors of H-Terminated Pb/p-Si Contacts With and Without The Interfacial Oxide Laye;, Applied Surface Science, 225, 318-323, (2004) |
| [23] | Aydın M.E.,Akkılıç K., Kılıçoğlu T., "The Importance of The Neutral Region Resistance for The Calculation of The Interface State in Pb/P-Si Schottky Contacts", Physica B, 352, 312-317, (2004) |
| [24] | Akkılıç K., Türüt A., Çankaya G., Kılıçoğlu T.Correlation Between Barrier Heights and Ideality Factors of Cd/n-Si and Cd/p-Si Schottky Barrier Diodes, Solid State Commun.,125,10, 551-556, (2003) |
| [25] | Akkılıç K., Kılıçoğlu T.,Türüt A.,Linear Correlation Between Barrier Heights and Ideality Factors of Sn/n-Si Schottky Diodes with and without The Interfacial Native Oxide Layer, Physica B, 337,1-4,388-393, (2003) |
| [26] | Sağlam M., Türüt A., Nuhoğlu Ç., Efeoğlu H., Kılıçoğlu T., Ebeoğlu M.A., Influences of Thermal Annealing, The Electrolyte pH, and Current Density on The Interface State Density Distribution of Anodic MOS Structures ", Applied Physics A 65, 33-37, (1997) |
| [27] | Kılıçoğlu T., Öztürk Z.Z., Ebeoğlu M.A., Türüt A., Özdemir M., Altındal A.,Effect of Electrolyte pH on Electrical Properties of The Interface Between n-InSb and Its Anodic Native Oxide;, Indian Journal of Pure & Applied Physics, 33, 205-209, (1995) |
| [28] | Kılıçoğlu T., Öztürk Z.Z., Ebeoğlu M.A., Gülsün Z.,Effect of Water Ratio of Electrolyte on The Properties of Si/Anodic Oxide Interfaces, Indian Journal of Pure & Applied Physics, 31, 718-720, (1993) |