Microelectronics and Solid State Electronics

Microelectronics and Solid State Electronics is an international peer-reviewed journal. It publishes full research papers, short notes and review articles. The journal is dedicated to advanced engineering methods for micro- and nanofabrication of electronic devices, circuits and systems for electronics, electromechanics, and bioelectronics.


Karim Mynbaev

Editorial Board Member of Microelectronics and Solid State Electronics

Head of Academic Department/Faculty, Ioffe Physical-Technical Institute, Russia

Research Areas

Semiconductor Physics, Solid State Physics, Optoelectronics, Nanotechnology

Education

2008D.Sc Ioffe Physical-Technical Institute, Russian Academy of Sciences, St.-Petersburg, Russia
1992Ph.DIoffe Physical-Technical Institute, Russian Academy of Sciences, St.-Petersburg, Russia
1986M.ScLeningrad Electrical Engineering University (LETI), St.-Petersburg, Russia

Experience

1986-presentResearcher/Scientist at Ioffe Physico-Technical Institute
1996-presentResponsible for electrical and optical characterization of narrow-gap II-VI materials. Materials research in nanotechnology for biology and medicine at Ioffe Physico-Technical Institute
1994-1996Responsible for epitaxial growth of SiC films by Liquid Phase Epitaxy at Ioffe Physico-Technical Institute
1993-1996Cree Eastern European Division (Russia), Responsible for epitaxial growth and characterization of SiC films grown by Liquid Phase Epitaxy
1986-1994Responsible for carrying out the experiments on diffusion and ion-beam-etching doping of mercury cadmium telluride and related materials at Ioffe Physico-Technical Institute
1983-1986Research assistant at Ioffe Physico-Technical Institute

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  M.G. Mynbaeva, A.A. Sitnikova, K.D. Mynbaev, Photoelectric Properties of Porous GaN/SiC Heterostructures. — Semiconductors, Vol. 45, No. 10, P. 1317–1320 (2011).
[2]  I.I. Izhnin, A.I. Izhnin, E.I. Fitsych, N.A. Smirnova, I.A. Denisov, M. Pociask, K.D. Mynbaev, Defect Structure of CdxHg1–xTe Films Grown by Liquid–Phase Epitaxy, Studied by Means of Low–Energy Ion Treatment. — Semiconductors, Vol. 45, No. 9, P. 1124–1128 (2011).
[3]  K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omski, N.N. Mikhailov, M.V. Yakushev, A.V. Sorochkin, S.A. Dvoretsky, V.S. Varavin, Yu.G. Sidorov, Photoluminescence of Hg1-xCdxTe Based Heterostructures Grown by Molecular–Beam Epitaxy. — Semiconductors, Vol. 45, No. 7, PP. 872–879 (2011).
[4]  E.L. Pankratov, M.G. Mynbaeva, E.N. Mokhov, K.D. Mynbaev, Diffusion in Porous Silicon Carbide. — Physics of the Solid State, Vol. 53, No. 5, PP. 943–949 (2011).
[5]  K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omski, A.V. Shilyaev, V.S. Varavin, N.N. Mikhailov, S.A. Dvoretsky, Yu.G. Sidorov, Photoluminescence of CdHgTe Based Nanostructures. — Technical Physics Letters, Vol. 36, No. 12, PP. 1099–1102 (2010).
[6]  K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omski, V.A. Smirnov, M.V. Yakushev, A.V. Sorochkin, V.S. Varavin, N.N. Mikhailov, G.Yu. Sidorov, S.A. Dvoretsky, Yu.G. Sidorov, Photoluminescence of CdHgTe Epilayers Grown on Silicon Substrates. — Technical Physics Letters, Vol. 36, No. 12, PP. 1085–1088 (2010).
[7]  I.I. Izhnin, I.A. Denisov, N.A. Smirnova, M. Pociask, K.D. Mynbaev, Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy. — Opto-Electronics Review, V. 18, No. 3, PP. 328–331 (2010).
[8]  I.I. Izhnin, S.A. Dvoretsky, K.D. Mynbaev, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, R. Jakiela, M. Pociask, G. Savitsky, Arsenic incorporation in MBE-grown HgCdTe studied with the use of ion milling. — Phys. Stat. Sol. (c), V. 7, No. 6, PP. 1618–1620 (2010).
[9]  V.I. Ivanov-Omskii, K.D. Mynbaev, N.L. Bazhenov, V.A. Smirnov, N.N. Mikhailov, G.Yu. Sidorov, V.G. Remesnik, V.S. Varavin, S. A. Dvoretsky, Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells. — Phys. Stat. Sol. (c), V. 7, No. 6, PP. 1621–1623 (2010).
[10]  M. Pociask, I.I. Izhnin, S.A. Dvoretsky, Yu.G. Sidorov, V.S. Varavin, N.N. Mikhailov, N.H. Talipov, K.D. Mynbaev, A.V. Voitsekhovskii, Ion-milling-induced conductivity type conversion in p-type HgCdTe MBE-grown films with graded-gap surface layers. — Semicond. Sci. Technol., V. 25, No. 6, Art. 065012 (2010).
[11]  M. Pociask, I.I. Izhnin, K.D. Mynbaev, A.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling. — Thin Solid Films, V. 518, No. 14, PP. 3879–3881 (2010).
[12]  M. Mynbaeva, K. Mynbaev, 'Technological Applications of Porous SiC'. Chapter 8 in 'Nanocrystals and Quantum Dots of Group IV Semiconductors', ed. by T. V. Torchynska and Yu. V. Vorobiev. American Scientific Publishers, New York, 2010, P. 253-273, ISBN 1-58883-154-X.
[13]  I.I. Izhnin, K.D. Mynbaev, M. Pociask, R.Ya. Mudryy, A.V. Voitsekhovskii, N.Kh. Talipov, Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions. — Physica B, V. 404, No. 23–24, PP. 5025–5027 (2009).
[14]  V.I. Ivanov-Omskii, N.L. Bazhenov, K.D. Mynbaev, V.A. Smirnov, V.S. Varavin, N.N. Mikhailov, G.Yu. Sidorov, Study of alloy disorder in (Hg,Cd)Te with the use of infrared photoluminescence. — Physica B, V. 404, No. 23–24, PP. 5035–5037 (2009).
[15]  V.I. Ivanov-Omskii, N.L. Bazhenov, K.D. Mynbaev, Effect of alloy disorder on photoluminescence in HgCdTe. — Physica Status Solidi (b), V. 246, No. 8, PP. 1858-1861 (2009).
[16]  M. Pociask, I.I. Izhnin, A.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu. G. Sidorov, V.S. Varavin, K.D. Mynbaev, Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling. — Semiconductor Science and Technology, V. 24, No. 2, Art. 025031 (2009).
[17]  A.I. Izhnin, I.I. Izhnin, K.D. Mynbaev, V.I. Ivanov-Omski, N.L. Bazhenov, V.A. Smirnov, V.S. Varavin, N.N. Mikhailov, Yu.G. Sidorov, Effect of Annealing on the Optical and Photoelectrical of CdxHg1-xTe Heteroepitaxial Structures for the Middle Infrared Range. — Technical Physics Letters, Vol. 35, No. 2, PP. 147–150 (2009).
[18]  M. Pociask, I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, K.D. Mynbaev, V.I. Ivanov-Omskii, Electrical Properties of n-HgCdTe Heteroepitaxial Layers Modified by Ion Etching. — Semiconductors, Vol. 42, No. 12, PP. 1413–1415 (2008).
[19]  I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, M. Pociask, K.D. Mynbaev, Ion-Beam-Induced Modification of the Electrical Properties of Vacancy-Doped Mercury Cadmium Telluride. — Technical Physics Letters, Vol. 34, No. 11, PP. 981–984 (2008).
[20]  M. Pociask, I.I. Izhnin, E.S. Ilyina, S.A. Dvoretsky, N.N. Mikhailov, Yu.G. Sidorov, V.S. Varavin, K.D. Mynbaev, Study of the defect structure of Hg1 xCdxTe films by ion milling. — Acta Physica Polonica A, Vol. 114, No. 5, PP. 1191–1199 (2008).
[21]  M. Mynbaeva, E.N. Mokhov, A.A. Lavrent'ev, K.D. Mynbaev, High-Temperature Diffusion Doping of Porous Silicon Carbide. — Technical Physics Letters, Vol. 34, No. 9, PP. 731–733 (2008).
[22]  M. Pociask, I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu. G. Sidorov, V.S. Varavin, K.D. Mynbaev, E. Sheregii, Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy. — Semiconductor Science and Technology, V. 23, No. 9, Art. 095001 (2008).
[23]  M. Mynbaeva, K.D. Mynbaev, D. Tsvetkov, HVPE growth of GaN on porous SiC substrates, Chapter 7 in "Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications", ed. by R.M. Feenstra and C.E.C. Wood. John Wiley and Sons, London, 2008, P. 171–211, ISBN 978-0-470-51752-9.
[24]  M. Mynbaeva, M. Kayambaki, K. Mynbaev, K. Zekentes, On application of electrochemical capacitance-voltage profiling technique for n-type SiC. — Semiconductor Science and Technology, V. 23, No. 7, Art. 075039 (2008).
[25]  M. Mynbaeva, A. Sitnikova, A. Tregubova, K. Mynbaev, HVPE GaN growth on porous SiC with closed surface porosity. — Journal of Crystal Growth, V. 303, No. 2, PP. 472–479 (2007).
[26]  N.L. Bazhenov, B.E. Zhurtanov, K.D. Mynbaev, A.P. Astakhova, A.N. Imenkov, M P. Mikhailova, V. A. Smirnov, N. D. Stoyanov, Yu.P. Yakovlev, Impact-Ionization-Stimulated Electroluminescence in Isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb Heterostructures. — Technical Physics Letters, Vol. 33, No. 12, PP. 987–989 (2007).
[27]  I.I. Izhnin, S.A. Dvoretsky, N.N. Mikhailov, Yu. G. Sidorov, V.S. Varavin, K.D. Mynbaev, M. Pociask, Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy. — Applied Physics Letters, V. 91, No. 13, Art. 132106 (2007).
[28]  V.V. Bogoboyashchyy, I.I. Izhnin, M. Pociask, K.D. Mynbaev, V.I. Ivanov-Omskii, Conduction type conversion in ion etching of Au-and Ag–doped narrow-gap HgCdTe single crystals. — Semiconductors, Vol. 41, No. 7, PP. 804–809 (2007).
[29]  V.I. Ivanov-Omski, N.L. Bazhenov, K.D. Mynbaev, V.A. Smirnov, V.S. Varavin, A.A. Babenko, I.G. Ikusov, G.Yu. Sidorov, 1.5–1.8µm Photoluminescence of MBE-Grown HgCdTe Films. — Technical Physics Letters, Vol. 33, No. 6, PP. 471–473 (2007).
[30]  I.I. Izhnin, V.V. Bogoboyashchyy, A.P. Vlasov, K.D. Mynbaev, M. Pociask, Relaxation of electrical properties of epitaxial CdxHg1-xTe: As(Sb) layers converted into n-type by ion milling. — Proceedings of SPIE, V. 6636, Art. 663612, (2007).
[31]  N.L. Bazhenov, K.D. Mynbaev, G.G. Zegrya, Dielectric Function of Quasi-2D Semiconductor Nanostructures. — Semiconductors, Vol. 41, No. 2, PP. 184–189 (2007).
[32]  K.D. Mynbaev, M.G. Mynbaeva, A.S. Zubrilov, N.V. Seredova, Luminescent Properties of GaN-Based Epitaxial Layers and Heterostructures Grown on Porous SiC Substrates. — Technical Physics Letters, Vol. 33, No. 1, PP. 83–85 (2007).
[33]  M.G. Mynbaeva, O.V. Konstantinov, K.D. Mynbaev, A.E. Romanov, A.A. Sitnikova, Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates. — Technical Physics Letters, Vol. 32, No. 12, PP. 1011–1013 (2006).
[34]  V.V. Bogoboyashchyy, I.I. Izhnin, K.D. Mynbaev, M. Pociask, A.P. Vlasov, Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors. — Semiconductor Science and Technology, V. 21, No. 8, PP. 1144–1149 (2006).
[35]  I. A. Kostko, N. A. Gun'ko, N. L. Bazhenov, K. D. Mynbaev, G. G. Zegrya, Effect of Intraband Carrier Relaxation on the Threshold Characteristics of Quantum Well Lasers. — Semiconductors, Vol. 40, No. 4, PP. 488–492 (2006).
[36]  V.V. Bogoboyashchyy, I.I. Izhnin, K.D. Mynbaev, The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe. — Semiconductor Science and Technology, V. 21, No. 2, PP. 116–123 (2006).
[37]  K.D. Mynbaev, V.I. Ivanov-Omskii, Doping of Epitaxial Layers and Heterostructures Based on HgCdTe (Review). — Semiconductors, Vol. 40, No. 1, PP. 1–21 (2006).
[38]  I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov, Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg1-x Te. — Semiconductor Physics, Quantum Electronics and Optoelectronics, V. 8, No. 1, PP. 52–58 (2005).
[39]  N.L. Bazhenov, K.D. Mynbaev, V.I. Ivanov-Omski, V.A. Smirnov, V.P. Evtikhiev, N.A. Pikhtin, M.G. Rastegaeva, A.L. Stankevich, I.S. Tarasov, A.S. Shkol'nik, G.G. Zegrya, Temperature Dependence of the Threshold Current of QW Lasers. — Semiconductors, Vol. 39, No. 10, PP. 1210–1214 (2005).
[40]  M.G. Mynbaeva, D.A. Bauman, K.D. Mynbaev, On the Role of Vacancies in Pore Formation in the Course of Anodizing of Silicon Carbide. — Physics of the Solid State, Vol. 47, No. 9, PP. 1630–1636 (2005).
[41]  M. Mynbaeva, A. Lavrent'ev, I. Kotousova, A. Volkova, K. Mynbaev, A. Lebedev, On Current Limitations in Porous SiC Applications. — Material Science Forum, Vols. 483–485, PP. 269–272 (2005).
[42]  M.G. Mynbaeva, K.D. Mynbaev, A. Sarua, M. Kuball, Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures. — Semiconductor Science and Technology, Vol. 20, No. 1, PP. 50–55 (2005).
[43]  L.P. Kazakova, M.G. Mynbaeva, K.D. Mynbaev, Carrier Drift Mobility in Porous Silicon Carbide. — Semiconductors, Vol. 38, No. 9, PP. 1081–1083 (2004).
[44]  K.D. Mynbaev, V.I. Ivanov-Omskii, Modification of Hg1–xCdxTe and Related Materials By Ion-Beam Treatment. — Journal of Alloys and Compounds, Vol. 371, No. 1–2, PP.153–156 (2004).
[45]  K.D. Mynbaev, V.I. Ivanov-Omskii, Modification of Hg1–xCdxTe properties by Low-Energy Ions (Review). — Semiconductors, V. 37, No. 10, PP.1127–1150 (2003).
[46]  K.D. Mynbaev and V.I. Ivanov-Omskii, Defect Formation in Epitaxial Layers of Cadmium Mercury Telluride Solid Solutions Highly Doped with Indium. — Technical Physics Letters, Vol. 29, No. 8, PP. 655–657 (2003).
[47]  M.G. Mynbaeva, K.D.Mynbaev, V.A. Ivantsov, A.A. Lavrent'ev, B.A. Grayson, and J.T. Wolan, Semi-insulating porous SiC substrates. — Semiconductor Science and Technology, Vol. 18, No. 6, PP. 602–606 (2003).
[48]  M. Mynbaeva, N. Kuznetsov, A. Lavrent'ev, K. Mynbaev, J.T. Wolan, B. Grayson, V. Ivantsov, A. Syrkin, A. Fomin, S.E. Saddow, Porous SiC: New Applications Through In-and Out-Dopant Diffusion. — Material Science Forum, Vols. 433–436, PP. 657–660 (2003).
[49]  M.G. Mynbaeva, A.A. Lavrent'ev, A.V. Fomin, K.D. Mynbaev, A.A. Lebedev, Magnesium Outdiffusion from Porous Silicon Carbide Substrates during Autodoping of Gallium Nitride Epilayers. — Technical Physics Letters, Vol. 29, No. 6, PP. 474–476 (2003).
[50]  M.G. Mynbaeva, A.A. Lavrent'ev, N.I. Kuznetsov, A.N. Kuznetsov, K.D. Mynbaev, A.A. Lebedev, Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC. — Semiconductors, Vol. 37, No. 5, PP. 594–597 (2003).
[51]  K.D. Mynbaev, N.L. Bazhenov, V.A. Smirnov, V.I. Ivanov–Omskii, Electrical Properties of CdxHg1–xTe Modified by Low-Energy Ion Bombardment. — Technical Physics Letters, Vol. 28, No. 11, PP. 955–957 (2002).
[52]  M. Mynbaeva, N. Bazhenov, K. Mynbaev, V. Evstropov, S.E. Saddow, Y. Koshka, Y. Melnik, Photoconductivity in Porous GaN Layers. — physica status solidi (b) Vol. 228, No. 2, PP. 589–592 (2001).
[53]  N.L. Bazhenov, G.G. Zegrya, M.P. Mikhailova, K.D. Mynbaev, V.A. Smirnov, Yu.P. Yakovlev, Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface. — Semiconductor Science and Technology, Vol. 16, PP. 812–815 (2001).
[54]  M. Mynbaeva, S.E. Saddow, G. Melnychuk, I. Nikitina, M. Scheglov, A. Sitnikova, N. Kuznetsov, K. Mynbaev, V. Dmitriev, Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates. — Applied Physics Letters, Vol. 78, No. 1, PP. 117–119 (2001).
[55]  M. Mynbaeva, N.S. Savkina, A.S. Tregubova, M.P. Sheglov, A.A. Lebedev, A. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N. Seredova, D. Tsvetkov, S. Stepanov, A. Cherenkov, I. Kotousova, and V.A. Dmitriev, Growth of SiC and GaN on Porous Buffer Layers. — Material Science Forum, Vols. 338–342, PP. 225–228 (2000).
[56]  M. Mynbaeva, A. Titkov, A. Kryzhanovski, V. Ratnikov, K. Mynbaev, R.Laiho, H. Huhtinen, V.A. Dmitriev, Structural characterization and strain relaxation in porous GaN layers. — Applied Physics Letters, Vol. 76, No. 9, PP. 1113–1115 (2000).
[57]  M. Mynbaeva, A. Titkov, A. Kryzhanovskii, A. Zubrilov, V. Ratnikov, V. Davydov, N. Kuznetsov, K. Mynbaev, S. Stepanov, A. Cherenkov, I. Kotousova, D. Tsvetkov, V. Dmitriev, GaN and AlN layers grown by nano epitaxial overgrowth technique on porous substrates. — Mat. Res. Soc. Symp. Proc., Vol. 595, W2.7.1 (2000).
[58]  M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V.Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov, V.A. Dmitriev, Strain relaxation in GaN layers grown on porous GaN sublayers. — MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Art. 14 (1999).
[59]  M.G. Mynbaeva, Yu.V. Melnik, A.K. Kryganovskii, K.D. Mynbaev, Wet Chemical Etching of GaN in H3PO4 with Al Ions. — Electrochemical and Solid–State Letters, Vol. 2, No. 8, PP. 430–433 (1999).
[60]  V.I. Ivanov-Omskii, K.E. Mironov, K.D. Mynbaev, Hg1-xCdxTe doping by ion-beam treatment. — Semiconductor Science and Technology, Vol. 8, No. 5, PP. 634–637 (1993).
[61]  N.L. Bazhenov, S.I. Gasanov, V.I. Ivanov-Omskii, K.E. Mironov, K.D. Mynbaev, Dark currents in p-n junctions formed by ion-beam etching of CdxHg1-xTe crystals, Soviet Physics — Semiconductors, Vol. 25, PP. 1323–1325 (1991).
[62]  V.I. Ivanov-Omskii, K.E. Mironov, K.D. Mynbaev, V.V. Bogoboyashchii, Changes in the defect structure of CdxHg1-xTe as a result of doping with indium. — Soviet Physics — Semiconductors, Vol. 25, PP. 857–860 (1991).
[63]  V.I. Ivanov-Omskii, K.E. Mironov, K.D. Mynbaev, Electrophysical properties of CdxHg1-xTe subjected to ion-beam treatment. — Soviet Physics — Semiconductors, Vol. 24, PP. 1379–1380 (1990).
[64]  K.E. Mironov, V.I. Ivanov-Omskii, K.D. Mynbaev, Diffusion of indium in epitaxial CdxHg1-xTe films. — Soviet Physics — Semiconductors, Vol. 24, PP. 368–370 (1990).