Microelectronics and Solid State Electronics

Microelectronics and Solid State Electronics is an international peer-reviewed journal. It publishes full research papers, short notes and review articles. The journal is dedicated to advanced engineering methods for micro- and nanofabrication of electronic devices, circuits and systems for electronics, electromechanics, and bioelectronics.


Mohamed Rinzan

Editorial Board Member of Microelectronics and Solid State Electronics

Post-doctoral Fellow, Physics department, Georgia State University, USA

Research Areas

Carbon Nanotube and Graphene Devices, Terahertz Sensors

Education

2007Ph.DCondensed Matter Physics, Georgia State University
2004M.S. Physics, Georgia State University
1994B.S. Physics, Kelaniya University (Colombo)

Experience

1996-2001Lecturer Sch. Of Electrical Eng./Moratuwa University
1995-1996Assistant Lecturer Dept. of Physics/Kelaniya University

Academic Achievement

Royal Flame Award-outstanding accomplishments as a Ph.D. student -2006
Brains and Behavior fellowship-2004/2005, 2005/2006
Outstanding advanced graduate student-2003/2004
Outstanding teaching assistant award-2003/2004
Outstanding second year graduate student-2001/2002

Membership

SIGMA XI, The scientific research society-Full Member
American physical society (APS)-Member

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  Electrical properties and memory effects of field effect transistors from networks of single and double-walled carbon-nanotubes, A. D. Bartolomeo, M. B. M. Rinzan, A. K. Boyd, Y. Yang, and P. Barbara, Nanotechnology 21, 115204 (2010).
[2]  Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity, A. B. Weerasekara, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, Infrared Physics & Technology, 50, 194 (2007).
[3]  Performance improvements of ultraviolet/infrared dual-band detectors, A. G. U. Perera, G. Ariyawansa, M. B. M. Rinzan, M.Stevens, M.Alevli, N. Dietz, S. G. Matsik, A. Asghar, T. Ferguson, H. Luo, A. Bezinger, and H. C.Liu, Infrared Physics & Technology, 50, 142 (2007).
[4]  n-type GaAs/AlGaAs Heterostructure detector with a 3.2 THz threshold frequency, A. B. Weerasekara, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, M. Buchanan, H. C. Liu, G. von Winckel, A. Stintz, and S. Krishna, Optics Letters, 32, 1335 (2007).
[5]  Effects of a p-n junction on heterojunction far infrared detectors, S.G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. H. Tan, C. Jagadish, and H. C. Liu, Infrared Physics & Technology, 50, 274 (2007).
[6]  Quantum mechanical effects in internal photoemission THz detectors, M. B. M. Rinzan, S. G. Matsik, and A. G. U. Perera, Infrared Physics & Technology, 50, 199 (2007).
[7]  Characteristics of a Si dual-band detector responding in both near-and very-long-wavelength infrared regions, G. Ariyawansa, M. B. M. Rinzan, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, M. Buchanan, G. I. Sproule, V. I. Gavrilenko, and V. P. Kuznetsov, Appl. Phys. Lett. 89, 061112 (2006).
[8]  Longitudinal-optical phonon hole plasmon coupled modes in heavily doped p-type GaSb:Zn epitaxial films, Z.G.Hu, M. B. M. Rinzan, A. G. U. Perera, M. Zhu, Y. Paltiel, A. Raizman, and A. Sher, Eur. Phys. J. B., 50, 403 (2006).
[9]  GaN/AlGaN heterojunction infrared detector responding in 8-14 and 20-70 µm ranges, G. Ariyawansa, M. B. M. Rinzan, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, and H. C. Liu, Appl. Phys. Lett. 89, 141122 (2006).
[10]  GaN/AlGaN ultraviolet/infrared dual-band detector, G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu, Appl. Phys. Lett. 89, 091113 (2006).
[11]  Terahertz absorption in AlGaAs films and detection using heterojunctions, M. B. M. Rinzan, A. G. U. Perera, S. G. Matsik, H.C.Liu, M. Buchanan, G. Von Winckel, A.Stintz, and S. Krishna, Infrared Physics & Technology, 47, 188 (2005).
[12]  Optical characterizations of heavily doped p-type AlxGa1-xAs and GaAs epitaxial films at terahertz frequencies, Z. G.Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, and S. Krishna, JAP, 97, 093529 (2005).
[13]  Near-and far-infrared p-GaAs dual-band detector, G. Ariyawansa, M. B. M. Rinzan, D. G. Esaev, S. G. Matsik, G. Hastings, A. G. U. Perera, H.C. Liu, B. N. Zvonkov, and V. I. Gavrilenko, Appl. Phys. Lett. 86, 143510 (2005).
[14]  AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold, M.B.M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, Z. Wasilewski, and M. Buchanan, Appl. Phys. Lett, 86, 071112 (2005).
[15]  20-micron cutoff heterojunction interfacial workfunction internal photoemission detectors, S. G. Matsik, M. B. M. Rinzan, D.G.Esaev, A.G.U. Perera, H. C. Liu, and M.Buchanan, Appl. Phys. Lett, 84, 3435 (2004).
[16]  Effect of doped substrate on IR detector response through cavity enhancement, S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, G. Von Winckel, A.Stintz, and S. Krishna, IEEE Transactions on Electron Devices, 52, 413 (2005).
[17]  Free carrier absorption in p-AlGaAs epitaxial thin films, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. Von Winckel, A. Stintz, and S. Krishna, Appl. Phys. Lett, 85, 5236 (2004).
[18]  Design and Optimization of GaAs/AlGaAs Heterojunction infrared detectors, D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, and A. G. U. Perera, JAP, 96, 4588 (2004).
[19]  High performance single emitter homojunction interfacial workfunction far infrared detectors, D. G. Esaev, M. B. M. Rinzan, S. G.Matsik, and A.G. U.Perera, JAP, 95, 512 (2004).
[20]  Cutoff tailorability of Heterojunction terahertz detectors, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, H. C. Liu, Z. R. Wasilewski, and M. Buchanan, Appl. Phys. Lett, 82, 139 (2003).
[21]  Resonant cavity enhancement in Heterojunction GaAs/AlGaAs terahertz detectors, D. G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. U. Perera, and H. C. Liu, JAP, 93, 1879 (2003).
[22]  The effects of light-heavy hole transitions on the cutoff wavelengths of Far Infrared detectors, A.G. U. Perera, S. G. Matsik, M. B. M. Rinzan, A. Weerasekara, M. Alevli, H. C. Liu, M. Buchanan, B. Zvonkov, and V. Gavrilenko, Infrared Physics and Technology, 44, 347 (2003).