Electrical and Electronic Engineering

Electrical and Electronic Engineering is an open access journal that provides rapid publication of articles in all areas of the subject. The journal welcomes the submission of manuscripts that meet the general criteria of significance and scientific excellence.

Ashok Kumar Saxena

Editorial Board Member of Electrical and Electronic Engineering

Professor, Indian Institute of Technology Roorkee, India

Research Areas

Electronics Engg

Education

1978Ph.DElectron.&Electric.Engg.Dept., Univ.of Sheffield, U.K
1969M.ScPhys: Electron., Agra University
1967B.ScAgra University

Experience

1988-1989Professor
1978-1988Reader
1976-1977Std.Telecom.Lab (London) as a research scholar
1972-1974SSA (CEERI)

Academic Achievement

Internat. Edu of the Year 2007 and gold medal and Archimedes Medal of Honour & Certificate of Achievement by IBC (UK)
20th Century Award of Achievement of IBC(U.K)
American Medal of Honor, Distn. Leadership Award & 2000 Millennium Gold Medal of Honor by ABI (USA)
INSA Young Scientist Gold Medal
Khosla Award Gold Medal & Commendation Certificates, Bharat Excellence Award & Gold Medal of FFI 06 & 09
Chosen for rising personalities of India & gold medal and Bharat Jyoti Award, S.K.Mitra Memorial Awards (twice), Govt. of India National Scholarship for Studies Abroad, Govt. of U.P National Scholarship, UGC Junior Fellowship, British Council Fees Award,
Overseas travel/grants from AICTE, DST, DOE, INSA, SERC(UK), NTT(Japan), IMT(Romania), Royal Society(UK), Ministry of Edn.& Social Welfare and UOR, Awards in Drawing & Paintings

Membership

F.I.E.T(UK), F.Inst.P(London), C.Phys.(London), FIETE, FIE, FIMS, SMIEEE(N.Y), FIBRF, MMRSI, MSSI, MABS, LMBITSAA, C.Phys (London) and C.Engg

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  S. S. Rathod, A. K. Saxena and S. Dasgupta "Modeling of threshold voltage, mobility, drain current and sub threshold leakage current in virgin and irriadiated SOI FinFET device"J Appl Phys (U.S.A)2010 (accepted)
[2]  S. K. Vishvakarma, V. Komal. Kumar, A. K. Saxena and S. Dasgupta, "Modeling and Estimation of Edge Direct Tunneling Current for Nanoscale Metal Gate (Hf/AlNx) Symmetric Double Gate MOSFET"Elsevier, Microelectronics Engineering, vol 42, 2011, pp 688-692
[3]  Balwinder Raj, Jatin Mitra, Deepak Kumar Bihani, Rangharajan V, A.K. Saxena and S Dasgupta "Process Variation Tolerant FinFET Based Robust Low Power SRAM Cell Design at 32nm Technology" J Low Power Electron (France), vol 7, no 2, April 2011, pp 163-121
[4]  Balwinder Raj, A K Saxena and S Dasgupta "Nanoscale FinFET Based SRAM Cell Design:Analysis of Performance metric, Process variation, Underlapped FinFET & Temperature effect"IEEE J Ccts & Syms (USA), vol 11, no 3, June 2011, pp 46-5
[5]  S. S. Rathod, A. K. Saxena and S. Dasgupta "Modeling of threshold voltage, mobility, drain current and sub threshold leakage current in virgin and irriadiated SOI FinFET device"J Appl Phys (U.S.A)2010 (accepted)
[6]  S. K. Vishvakarma, V. Komal Kumar, A. K. Saxena, and S. Dasgupta "Modeling and and Estimation of Band to Band Tunneling Current for Nanoscale Metal Gate (Hf/AlNx) Symmetric Double Gate MOSFET " J Nano & Optoelectron (USA), vol.5, no 3, 2010, pp 340-342
[7]  S.S.Rathod, A. K. Saxena and S. Dasgupta "Electrical performance study of 25 nm Ω–Fin FET under the influence of gamma radiation: A 3-D simulation"Microelectron J (U.K), 2010, pp 165-172