International Journal of Materials and Chemistry

International Journal of Materials and Chemistry is a peer-reviewed international journal that publishes high impact work on the chemistry of novel materials. It covers the chemistry of materials in all forms, particularly materials associated with new technologies. Coverage is broad and includes the design and synthesis of materials, their characterization, processing, modeling, properties and applications.

Pankaj Ahirwar

Engineer, University of New Mexico, USA

Research Areas

Semiconductor Physics, Optoelectronics,Semiconductor Lasers, Midinfrared Optoelectronics, Antimonide lasers, Molecular beam epitaxy,Solar cells, detectors, signal integrity, RF electronics,Material Science, SEM, AFM, Xray Diffraction,Crystal structure,VLSI, low power design


2008-2013PhDUniversity of New Mexico
2001-2005BSIndian Institute of Technology Roorkee


2013-PresentSenior Engineer (Signal Integrity) Marvell Semiconductos
2008-2013 Reasearch Assistant, University of New Mexico
2008-2008Design Engineer II, Freescale Semiconductors
2006-2008Design Engineer I, Texas Instruments

Publications: Journals

[1]  Ahirwar, P; Rotter, T; Shima, Darryl; Jahan, N; Clark, S; Addamane, S; Balakrishnan, Ganesh;Laurain, Alexandre; Hader, Jorg; Lai, Y; “Growth and optimization of 2 μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.2013, IEEE.
[2]  Ahirwar, P; Clark, SPR; Patel, V; Rotter, TJ; Hains, C; Albrecht, A; Dawson, LR; Balakrishnan, G;“Perforated (In) GaSb quantum wells on GaSb substrates through the use of As 2 based in situ etches”,Journal of Vacuum Science & Technology B:
[3]  Schuler-Sandy, T; Myers, S; Klein, B; Gautam, N; Ahirwar, P; Tian, Z-B; Rotter, T; Balakrishnan, G; Plis, E; Krishna, S; ",Gallium free type II InAs/InAsxSb1-x superlattice photodetectors,Applied Physics Letters,101,7,071111,2012, AIP Publishing.
[4]  Husaini, S; Shima, D; Ahirwar, P; Rotter, TJ; Hains, CP; Dang, T; Bedford, RG; Balakrishnan, G; “Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflecto ”,Applied Physics Letters, 102, 6, 063108, 2013, AIP Publishing.

Publications: Conferences/Workshops/Symposiums

[1]  P. Ahirwar et. Al. “TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance.”Presented at SPIE Photonics West 2013, San Francisco, CA.
[2]  P. Ahirwar et. al “Transmission Electron Microscopy Study of Metamorphic III-Sb VECSELs on GaAs/AlGaAs,Distributed Bragg Reflectors”, presented at the IEEE Photonics conference (IEEE-IPC 2013), Burlingame, CA, 2012.
[3]  P. Ahirwar et. al. “Growth and Characterization of Quinternary Barriers (AlzInyGa1-z-yAsxSb1-x) for Type I Mid-Infrared (2-5 μm) Lasers”, presented at the 54th Electronics Materials conference (EMC-2012), State College, PA.
[4]  P. Ahirwar, et. al., “Growth of III-Sb VECSELs for high-power continuous wave operation”, presented at the 53rd Electronics Materials Conference (EMC), Santa Barbara, CA, 2011.
[5]  Stephen Clark, P. Ahirwar, et. al., “Growth and characterization of AlInSb metamorphic buffers on GaSb and GaAs substrates for the growth of MWIR lasers”, presented at the 53rd Electronics Materials Conference (EMC),Santa Barbara, CA, 2011.
[6]  P. Ahirwar, et. al., “MBE Growth of Quintinary Barriers for Long Wavelength (3-3.5 μm) VECSELs on GaAs/AlGaAs DBRs”, presented at 27th North American Molecular Beam Epitaxy Conference) Breckenridge,Colorado.