Science and Technology

Science and Engineering provides an international channel for the publication of theoretical and experimental studies. The journal publishes issues of rigorous and original contributions devoted to a wide range of subfields in the engineering and sciences.

Vitalyi Igorevich Talanin

Editorial Board Member of Science and Technology

Professor, Zaporozhye Institute of Economics and Information Technologies, Ukraine

Research Areas

Material Science (Intermolecular Interactions in the Solid State, Modeling of Crystal Growth Processes, Transport Phenomena, Nanotechnology, Electronic Materials, Computation & Modeling Materials, Materials Theory) Semiconductors, Thermodynamic Properties

Education

2004-2006MScProgramming engineer, Classic Privat University
2000-2002PhDPhysics of semiconductors & dielectrics, Zaporozhye State Engineering Academy
1998-2000MScMarketing manager, Zaporozhye State Engineering Academy
1995-2000MSc Electronics engineer, Zaporozhye State Engineering Academy

Experience

2012-presentProfessor, Vice-Chief of Computer Science & Software Engineering Dept., Zaporozhye Institute of Economics and Information Technologies
2006-2012Professor, Classic Privat Univ., Programming and information technology Dept.
2003-2006Associate Professor, Classic Privat Univ., Programming and information technology Dept.
2002-2003Assistant, Zaporozhye State Engineering Acad., Physical and Biomedical Electronics Dept.
2002Leading Researcher, Zaporozhye State Engineering Acad., Physical and Biomedical Electronics Dept.
1997-2003Chief Engineer, Zaporozhye State Engineering Acad.

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  V.I.Talanin, I.E.Talanin, D.I.Levinson. Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon//Semicond. Sci. & Technol. Vol. 17 (2002). 104.
[2]  V.I.Talanin, I.E.Talanin, D.I.Levinson. Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon//Cryst. Res. & Technol. Vol. 37 (2002). 983.
[3]  V.I.Talanin, I.E.Talanin. Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects//Phys. Stat. Sol. (a). Vol. 200 (2003). 297.
[4]  V.I.Talanin, I.E.Talanin. Classification of microdefects in semiconducting silicon//Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 6 (2003). 431.
[5]  V.I.Talanin, I.E.Talanin. Nucleation, growth and transformation of microdefects in FZ-Si//Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 7 (2004) 16.
[6]  V.I.Talanin, I.E.Talanin, D.I.Levinson. Formation of microdefects in semiconductor silicon//Crystallography Reports. Vol. 49 (2004). 188.
[7]  V.I.Talanin, I.E.Talanin. Mechanism of formation and physical classification of the grown-in microdefects in semiconductor silicon//Defect & Diffusion Forum. Vol. 230-232 (2004). 177.
[8]  V.I.Talanin, I.E.Talanin, S.A. Koryagin, M.Yu. Semikina. Modeling vacancy microvoids formation in dislocation-free silicon single crystals//Semicond. Phys., Quantum Electronics & Optoelecrtronics. Vol. 9 (2006). 77.
[9]  V.I.Talanin, I.E.Talanin. Formation of grown-in microdefects in dislocation-free silicon monocrystals//In: New Research on Semiconductors/Ed. T.B.Elliot. (Nova Sci. Publ., 2006, New York). Р. 31-68.
[10]  V.I.Talanin, I.E.Talanin. On the recombination of intrinsic point defects in dislocation-free silicon single crystals//Physics of the Solid State. Vol. 49 (2007). 467.
[11]  V.I.Talanin, I.E.Talanin, A.A.Voronin. About the simulation of primary grown-in microdefects in dislocation-free silicon single crystals formation//Canadian Journal of Physics. Vol. 85 (2007). 1459.
[12]  V.I.Talanin. The modeling and properties of dislocation-free silicon single crystals defect structure. (HU "ZISMG", 2007, Zaporozhye) 275 p. (On Russian).
[13]  V.I.Talanin, I.E.Talanin. Modelling of the defect structure in dislocation-free silicon single crystals//Crystallography Reports. Vol. 53 (2008). 1124.
[14]  V.I.Talanin, I.E.Talanin, A.I.Mazurskii, M.L.Maximchuk. The development of software for the calculation of dislocation-free silicon monocrystals grown-in defect structure//In: Algorithms & Programs for the Research of Physical Processes in Solid State/Ed. A.N.Gorban. (CPU, 2009, Zaporozhye). P. 67-114. (On Russian).
[15]  V.I.Talanin, I.E.Talanin. Modelling of defect formation processes in dislocation-free silicon single crystals//Crystallography Reports. Vol. 55 (2010). 632.
[16]  V.I.Talanin, I.E.Talanin. Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals//Physics of the Solid State. Vol. 52 (2010). 1880.
[17]  V.I.Talanin, I.E.Talanin. Kinetics of high-temperature precipitation in dislocation-free silicon single crystals//Physics of the Solid State. Vol. 52 (2010). 2063.
[18]  V.I.Talanin, I.E.Talanin. Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of as-grown silicon crystals//Physics of the Solid State. Vol. 53 (2011). 119.
[19]  V.I.Talanin, I.E.Talanin, N.Ph.Ustimenko. A new method for research of grown-in microdefects in dislocation-free silicon single crystals//Journal of Crystallization Process and Technology. Vol. 1 (2011). 13.
[20]  V.I.Talanin, I.E.Talanin. A kinetic model of the formation and growth of interstitial dislocation loops in dislocation-free silicon single crystals // J. Crystal Growth. Vol. 346 (2012). 45.
[21]  V.I.Talanin, I.E.Talanin. The diffusion model of grown-in microdefects formation during crystallization of dislocation-free silicon single crystals // In: Advances in Crystallization Processes / Ed. Y. Mastai. (INTECH Publ., 2012, Rijeka). P. 611-632