American Journal of Condensed Matter Physics

American Journal of Condensed Matter physics is a peer reviewed, scientific journal, which publishes papers that contain fundamental condensed matter science.


Nikolai Sobolev

Editorial Board Member of American Journal of Condensed Matter Physics

Associate Professor, Departamento De FíSica, Universidade De Aveiro, Portugal

Research Areas

Defects In Semiconductors and Quantum Size Semiconductor Structures; Magnetically Doped Semiconductors; Magnetic Nanostructures; Multiferroics; Optical and Magnetic Resonance Spectroscopy

Education

1974-1977postgrauate studentFriedrich Schiller University of Jena
1973-1974postgrauate studentUniversity of Minsk

Experience

1978-1980Senior Research Fellow at the Belarusian State University of Minsk, Department of Semiconductor Physics
1980-2004Research Staff Member, Senior Research Fellow (Head of a Research Group) at the Institute of Solid State and Semiconductor Physics of the Belarusian Academy of Sciences, Minsk
1987-1995Associate Professor (part-time) at the Departemt of Microelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk
1997-1998Vice-Head, Head (part-time), Minsk Distance Learning Centre of the FernUniversity of Hagen (Germany)
1998-2000Invited Scientist, University of Aveiro, Physics Department
2000-2001Visiting Associate Professor, University of Aveiro, Physics Department
2001-2005Invited Associate Professor, University of Aveiro, Physics Department
2005presentAssociate Professor, University of Aveiro, Physics Department

Academic Achievement

1973 Diploma (MS) in physics with the highest mark ("very good") from the Friedrich Schiller University of Jena. Title of the diploma work "Development and Test of a Q-Band EPR Spectrometer"
1976 Honorary Diploma from the Ministry of Higher Education of the USSR
1978 Dr. rer. nat. (PhD) from the Friedrich Schiller University of Jena with the highest mark ("summa cum laude"). Title of the thesis "Electron Paramagnetic Resonance in Ion Implanted Silicon"
1990 First Prize for the best scientific work from the Institute of Solid State and Semiconductor Physics, Minsk
1991 Sr. Researcher/Assoc. Professor Certificate from the Supreme Classification Board of the USSR
1993 DAAD grant for a research stay at the University of Ulm (Germany)
1998 JNICT grant for a research stay at the University of Aveiro (Portugal)

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  G. Gotz, W. Karthe, B. Schnabel, and N.A. Sobolev. "EPR Line Shape Study of Amorphous Centers in Ion Implanted Silicon." Phys. Stat. Solidi (a), Vol. 50 (1978) K209.
[2]  N.A. Sobolev and V.P. Tolstykh. "Peculiarities of Paramagnetic Defects Creation at Various Implantation Temperatures" (in Russian). In: "Interactions of Atomic Particles with Solids", (Minsk, 1978), Pt. 2, p. 105.
[3]  N.A. Sobolev, G. Gotz, E. Glaser, W. Karthe, and B. Schnabel. "Paramagnetic Radiation Defects and Amorphization in Silicon Implanted with Boron Ions" (in Russian). In: "Ion Implantation in Semicond." (ZfK Rossendorf bei Dresden, 1978), Pt. 1, p. 279.
[4]  N.A. Sobolev, G. Gotz, W. Karthe, and B. Schnabel. "EPR Studies of Point Defects and Amorphous Phase Production during Ion Implantation in Silicon." Radiat. Effects, Vol. 42 (1979) 23.
[5]  G. Gotz, E. Glaser, W. Wesch, and N.A. Sobolev. "Amorphization of Silicon by Ion Bombardment." In: "Radiation Physics of Semiconductors and Related Materials" (Tbilisi, 1980), p. 391.
[6]  E. Glaser, G. Gotz, N.A. Sobolev, and W. Wesch. "Investigations of Radiation Damage Production in Ion Implanted Silicon." Phys. Status Solidi (a), Vol. 69 (1982) 603.
[7]  V.V. Gribkovskii, F.P. Korshunov. N.A. Sobolev, and V.A. Sheraukhov. "Luminescence of Transmutation Doped Silicon Annealed by Incoherent Light" (in Russian). In: "Interactions of Atomic Particles with Solids" (Minsk, 1984), Pt. 1, p. 286.
[8]  T.N. Gaponyuk, G.V. Gatalskii, and N.A. Sobolev. "Radiation Enhanced Annealing in Silicon" (in Russian). Ibid., Pt. 2, p. 103.
[9]  V. Borisenko, V. Gribkovskii, F. Korshunov, and N. Sobolev. "Stability of Phosphorous Solid Solutions in Silicon Produced by Ion Implantation and Transient Thermal Processing". In: "Energy Pulse Modification of Semiconductors and Related Materials" (Dresden, 1985), p. 326.
[10]  M.B. Breslav-Maslennikov, A.V. Kerget, F.P. Korshunov, and N.A. Sobolev. "An Universal Optical Spectrometer for Studies of Defects and Impurities in Semiconductors" (in Russian). In: "New Exp. Methods in Radiation Physics of Semiconductors" (Yerevan, 1985), p. 58.
[11]  M.B. Breslav-Maslennikov, A.V. Kerget, F.P. Korshunov, and N.A. Sobolev. "Control and Registration System for an Optical Spectrometer" (in Russian). Pribory i Tekhn. Experimenta [Devices and Experimental Techniques], 1986, No. 5, p. 242.
[12]  F.P. Korshunov, N.A. Sobolev, V.A. Solodukha, and V.A. Varkhapovich. "The Use of Pulsed Annealing for Enhancing Parameters of Radiation Treated Silicon and Structures on Its Basis" (in Russian). Izvestiya AN BSSR. Ser. Fiz.-Mat. Nauk [Proc. Acad. Sci. of Belarus, Phys.-Math. Sci. Series], 1987, No. 4, p. 66. N.I. Akulovich, V.D. Zhitkovskii, F.P. Korshunov, V.V. Petrenko, N.A. Sobolev, and V.I. Utenko. "Aluminum Doping in Silicon by High-Energy Gamma Irradiation" (in Russian). In: "Interaction of Atomic Particles with Solids". (Moscow, 1987), Pt. 2, p. 333.
[13]  F.P. Korshunov, N.A. Sobolev, V.A. Sheraukhov, T.N. Gaponyuk, V.K. Shesholko, and V.V. Gribkovskii. "Electrical and Optical Properties of Transmutation Doped Silicon Subjected to Incoherent Light Annealing" (in Russian). Ibid., p. 365.
[14]  F.P. Korshunov, T.A. Prokhorenko, N.F. Kurilovich, N.G. Kolin, N.A. Sobolev, and V.A. Sheraukhov. "Photoluminescence and Electrical Properties of Transmutation Doped Gallium Arsenide" (in Russian). Doklady AN BSSR [Trans. Acad. Sci. of Belarus], Vol. 31 (1987) 695.
[15]  F.P. Korshunov, N.A. Sobolev, V.A. Sheraukhov, T.N. Gaponyuk, V.K. Shesholko, and V.V. Gribkovskii. "Pulsed Annealing of Nuclear-Transmutation-Doped Silicon." Sov. Phys.-Semicond., Vol. 21 (1987) 1192.
[16]  F.P. Korshunov, N.A. Sobolev, V.A. Solodukha, A.I. Dudarchik, and V.A. Varkhapovich. "Application of Transient Incoherent Light Annealing to Radiation Treated Semiconductor Materials and Structures" (in Russian). Elektronnaya Tekhnika, Ser. 7 [Electronic Engineering, Series 7], 1988, No. 4 (149) p. 23.
[17]  F.P. Korshunov, N.A. Sobolev, N.G. Kolin, E.A. Kudriavtseva, and T.A. Prokhorenko. "Pulsed Annealing of Neutron-Transmutation-Doped Gallium Arsenide". Sov. Phys.-Semicond., Vol. 22 (1988) 1169.
[18]  F.P. Korshunov, N.A. Sobolev, and V.A. Sheraukhov. "Near-Edge Luminescence of Irradiated Silicon. The Effect of the Irradiation Species and of the Annealing Temperature". J. Appl. Spectroscopy, Vol. 51 (1989) 797.
[19]  F.P. Korshunov, N.A. Sobolev, V.A. Sheraukhov, A.S. Kamyshan, V.A. Solodukha, and V.I. Kulgachev. "Control of Parameters of p-n-p Structures by Simultaneous Irradiation with Electrons and Gamma Rays" (in Russian). Elektronnaya Tekhnika, Ser. 7 [Electronic Engineering, Series 7], 1990, No. 6, p. 25.
[20]  F.P. Korshunov, S.I. Radautsan, N.A. Sobolev, I.M. Tiginyanu, V.V. Ursaki, and E.A. Kudriavtseva. "Edge Luminescence of n-InP Crystals Irradiated with 3.5-4 MeV Electrons". Sov. Phys.-Semicond., Vol. 23 (1989) 980.
[21]  A.V. Voevodova, F.P. Korshunov, N.A. Sobolev, and A.A. Stuk. "Influence of Nuclear-Transmutation Doping on the Formation of Radiation Defects in Si:Ge". Sov. Phys.-Semicond., Vol. 23 (1989) 734.
[22]  I.A. Aksenov, B.V. Korzun, L.A. Makovetskaya, N.A. Sobolev, and S.P. Zhukov. "Energy Levels in CuInS2 Related to Intrinsic Defects". Sov. Phys.-Semicond., Vol. 23 (1989) 1049.
[23]  F.P. Korshunov, N.A. Sobolev, E.A. Kudriavtseva, N.G. Kolin, and T.A. Prokhorenko "Rapid Thermal Annealing of Neutron Transmutation Doped GaAs". Crystal Research & Preparation, Vols. 19-20 (1989) 149.
[24]  F.P. Korshunov, N.A. Sobolev, and V.A. Sheraukhov. "Defect Control in Irradiated Silicon by Near Edge Luminescence Spectroscopy". In: "Defect Control in Semiconductors" (North Holland, Amsterdam e. a., 1990), Vol. 1, p. 559.
[25]  A.V. Voevodova, F.P. Korshunov, N.A. Sobolev, and A.A. Stuk. "On the Impurity Gettering in Neutron Transmutation Doped Si". Ibid., p.387.
[26]  F.P. Korshunov, A.A. Pavlenko, N.A. Sobolev, and A.V. Voevodova. "Rapid Thermal Annealing of Proton Transmutation Doped Silicon". In: "Energy Pulse and Particle Beam Modification of Materials" (Akademie-Verlag, Berlin, 1990), p. 246.
[27]  F.P. Korshunov, N.A. Sobolev, N.G. Kolin, E.A. Kudriavtseva, and T.A. Prokhorenko. "Pulsed Annealing in the Course of Transmutation Doping in GaAs, InP, InAs" (in Russian). Elektronnaya Tekhnika, Ser. 6 [Electronic Engineering, Series 6], 1989, No. 4 (241), p. 52.
[28]  F.P. Korshunov, T.A. Prokhorenko, and N.A. Sobolev. "Influence of Electron Irradiation on Photoluminescence and Electrical Parameters of Transmutation Doped Gallium Arsenide" (in Russian). Izvestiya AN BSSR. Ser. Fiz.-Mat. Nauk [Proc. Acad. Sci. of Belarus, Phys.-Math. Sci. Series], 1991, No. 1, p. 44.
[29]  F.P. Korshunov, S.I. Radautsan, N.A. Sobolev, I.M. Tiginyanu, E.A. Kudriavtseva, V.A. Ursu, I.N. Tsyplenkov, V.N. Lamm, and V.A. Sheraukhov. "Influence of Fast-Electron Irradiation on the Edge Photoluminescence of Epitaxial n-Type InP Films". Sov. Phys.-Semicond., Vol. 24 (1990) 1263.
[30]  I.A. Aksenov, N.A. Sobolev, and V.A. Sheraukhov. "Luminescence Studies of Electron-Irradiated CuInS2". Phys. Stat. Sol. (a), Vol. 123 (1991) K171.
[31]  T.P. Svistelnikova, T.V. Moiseenkova, F.P. Korshunov. N.A. Sobolev, and V.A. Kharchenko. "Diffusion of Gold in Silicon upon Neutron Irradiation, Pulsed and Stationary Annealing". Inorganic Materials, Vol. 27 (1991) 902.
[32]  T.A. Prokhorenko and N.A. Sobolev. "Properties of Transmutation Doped GaAs Irradiated with Electrons at Elevated Temperatures" (in Russian). Izvestiya AN BSSR. Ser. Fiz.-Mat. Nauk [Proc. Acad. Sci. of Belarus, Phys.-Math. Sci. Series], 1991, No. 3, p. 81.
[33]  F.P. Korshunov, N.A. Sobolev, N.I. Akulovich, V.A. Bykovskii, and V.I. Utenko. "Novel Aspects of Transmutation Doping in Semiconductors" (in Russian). Ibid., p. 24.
[34]  N.A. Sobolev. "Near Band Edge Luminescence of Semiconductors Containing RadiationDefects" (in Russian). Ibid., p. 14.
[35]  F.P. Korshunov, V.I. Dumbrov, O.V. Galeta, N.A. Sobolev, V.A. Sheraukhov, L.I. Yanovskaya, V.T. Troshchinskii, and S.A. Valchevskii. "Pulsed Photonic Annealing of Irradiated TTL ICs" (in Russian). In: "Radiation Hardness of Board Equipment and Elements of Space Vehicles". (Tomsk, 1991), p. 87.
[36]  F.P. Korshunov, T.A. Prokhorenko, N.A. Sobolev, and E.A. Kudriavtseva. "Defect-Impurity Interaction in Irradiated n-GaAs" In: "Defect Engineering in Semiconductor Growth, Processing and Device Technology" (Mat. Res. Soc. Symp. Proc., Pittsburgh, USA, 1992), Vol. 262, p. 603.
[37]  G.M. Berezina, F.P. Korshunov, N.A. Sobolev, A.V. Voevodova, and A.A. Stuk. "Rapid Thermal Annealing of Neutron Transmutation Doped Czochralski Silicon". Ibid., p. 731.
[38]  S.I. Radautsan, I.M. Tiginyanu, V.V. Ursaki, F.P. Korshunov, N.A. Sobolev, and E.A. Kudriavtseva. "The Influence of Isochronous Annealing upon the Near Band Edge Photoluminescence of the Electron Irradiated n-InP". Solid State Commun., Vol. 85 (1993) 525.
[39]  F.P. Korshunov, T.A. Prokhorenko, N.A. Sobolev, and E.A. Kudriavtseva. "Defect-Impurity Interaction in Irradiated n-GaAs". Defect and Diffusion Forum, Vols. 103-105 (1993) 51.
[40]  D.I. Brinkevich, V.V. Petrov, N.A. Sobolev, and S.A. Vabishchevich. "Structure and Doping of Epitaxially Grown AlGaP". In: "Nonlinear Phenomena in Complex Systems" (Polatsk, 1994), p. 272.
[41]  V.D. Aleshin, V.V. Borshchenskii, D.I. Brinkevich, V.V. Petrov, N.A. Sobolev, and S.M. Samonov. "Photoluminescence of Al(x)Ga(1-x)P Epitaxial Layers". Inorganic Materials, Vol. 30 (1994).
[42]  Chao Chen, N.A. Sobolev, and M.I. Tarasik. "Exciton Transitions in Photoluminescence Spectra of AIAs/GaAs Superlattices". J. Applied Spectroscopy, Vol. 61 (1994) 613.
[43]  D.I. Brinkevich, S.A. Vabishchevich, V.V. Petrov, and N.A. Sobolev. "Epitaxial Layers of GaP Doped by Rare-Earth Elements". In: "Nonlinear Phenomena in Complex Systems" (Minsk, 1995), p. 388.
[44]  F.P. Korshunov, N.F. Kurilovich, L.I. Murin, T.A. Prokhorenko, and N.A. Sobolev. "Creation and Annealing of Radiation Defects in GaAs Doped with Various Donor Impurities" (in Russian). Izvestiya ANB. Ser. Fiz.-Mat. Nauk [Proc. Acad. Sci. of Belarus, Phys.-Math. Sci. Series], 1995, No. 1, p.68.
[45]  N.A. Sobolev, F.P. Korshunov, R. Sauer, K. Thonke, U. Konig, and H. Presting. "Radiation Effect on Luminescence in Si/Ge Superlattices and QuantumWells". In: "Physics, Chemistry, and Application of Nanostructures" (Minsk, 1995), p. 117.
[46]  T.V. Kovyazina, T.A. Prokhorenko, N.A. Sobolev, V.P. Bondarenko, G.N. Troyanova, and N.V. Shlopak. "Properties of MOCVD GaAs Films Grown on Porous Silicon". Ibid., p. 97.
[47]  D.I. Brinkevich, S.A. Vabishchevich, and N.A. Sobolev. "Photoluminescence of Gallium Phosphide Epitaxial Layers Doped with Rare-Earth Elements". J. Applied Spectroscopy, Vol. 63 (1996) 283.
[48]  A.G. Ulyashin, Yu.A. Bumai, N.V. Shlopak, N.A. Sobolev, and T.A. Prokhorenko. "Hydrogen Effects on the Electrical and Optical Properties of γ-Irradiated n-Type GaAs Epilayers". Nucl. Instr. and Methods. B, Vol. 108 (1996) 65.
[49]  N.A. Sobolev, F.P. Korshunov, R. Sauer, K. Thonke, U. Konig, and H. Presting. "Influence of Electron Irradiation and Annealing on Photoluminescence of Si/Ge Superlattices and Si/Ge Quantum Wells". J. Cryst. Growth, Vol. 167 (1996) 502.
[50]  V.D. Aleshin, D.I. Brinkevich, S.A. Vabishchevich, and N.A. Sobolev. "The Influence of Lanthanides on the Defect-Impurity Composition of Epitaxial GaP Layers". Semiconductors, Vol. 30 (1996) 483.
[51]  N.A. Sobolev, K. Gartner, U. Kaiser, U. Konig, H. Presting, B. Weber, E. Wendler, and W. Wesch. "On the Amorphization of the Si/Ge Superlattices upon Ion Bombardment". Materials Science Forum, Vols. 248-249 (1997) 289.
[52]  V.A. Savchuk, B.V. Korzoun, N.A. Sobolev, and L.A. Makovetskaya. "Luminescence Study of Copper-Aluminum Diselenide". Semiconductors, Vol. 31 (1997) 315.
[53]  N.A. Sobolev. "Radiation Effects in Si/Ge Nanostructures" (invited). In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 1997), p. 43.
[54]  N.A. Sobolev, J. Gerster, G. Mauckner, M. Wolpert, W. Limmer, K. Thonke, R. Sauer, H. Presting, and U. Konig. "Ion Beam Induced Structural Transformations in SimGen Superlattices". Nucl. Instr. and Methods B, Vols. 136-138 (1998) 1057.
[55]  N.A. Sobolev, G.N. Troyanova, V.P. Bondarenko, A.V. Bondarenko, A.M. Dorofeev, T.A. Prokhorenko, T.V. Kovyazina, N.V. Shlopak, A.A. Kutas, and P.I. Gaiduk. "High-Quality GaAs Epilayers Grown on Porous Si". In: Porous Semiconductors-Science and Technology (Technical Univ. of Valencia and Univ. of Balearic Islands, 1998) p. 135.
[56]  N.A. Sobolev. "Concepts and Content of Physics Studies at Belarusian and German Universities: an Attempt of Comparative Analysis" (in Russian). Vysshaya Shkola [Higher Education] (Minsk) No. 3-4, 1998, p. 70.
[57]  E.S. Basova, S.B. Lastovskii, N.A. Sobolev, F.P. Korshunov, U. Konig, and H. Presting."Influence of Radiation Effects on the Capacitance Characteristics of p-n Structures Containing a Si6Ge4 Superlattice. In: "Topical Problems of Solid-State Electronics and Microelectronics" (Taganrog, TRTU, 1998) p. 71.
[58]  N.A. Sobolev, U. Kaiser, I.I. Khodos, H. Presting, and U. Konig. "Amorphization Mechanism of Si/Ge Superlattices upon Ion Implantation". In: "Microstructural Processes in Irradiated Materials" (Mat. Res. Soc. Symp. Proc., Warrendale, PA, USA, 1999) Vol. 540, p. 91.
[59]  N.A. Sobolev, U. Kaiser, I.I. Khodos, H. Presting, and U. Konig. "Crystalline-to-Amorphous Phase Transition in Si/Ge Superlattices upon Ion Implantation". Bulletin of the Russian Academy of Sciences, Physics Series, Vol. 63 (1999) 1066.
[60]  A.J. Neves, R. Pereira, N.A. Sobolev, M.H. Nazaré, W. Gehlhoff, A. Naser, and H. Kanda."New Paramagnetic Defects in Synthetic Diamonds Grown Using Nickel Catalyst". Physica B, Vols. 273-274 (1999) 651.
[61]  A.J. Neves, R. Pereira, N.A. Sobolev, M.H. Nazaré, W. Gehlhoff, A. Naser, and H. Kanda."New Paramagnetic Centers in Annealed High-Pressure Synthetic Diamond". Diamond and Related Materials, Vol. 9 (2000) 1057.
[62]  N.A. Sobolev and M.H. Nazaré. "Defects Incorporating Ge Atoms in Irradiated Si:Ge". Physica B, Vols. 273-274 (1999) 271.
[63]  R. Pereira, W. Gehlhoff, A.J. Neves, A. Naser, N.A. Sobolev, A. Hoffmann, H. Kanda, M.H. Nazaré, and D. Bimberg "EPR-Nachweis von Ni-korrelierten Defekten in synthetischem Diamant". In: Verhandlungen der DPG 4/2000, HL 10.4, S. 506.
[64]  E. Alves, A.D. Sequeira, N. Franco, M.F. da Silva, J.C. Soares, N.A. Sobolev, and M.C. Carmo. "Coherent amorphization of Ge/Si multilayers with ion beams". Nucl. Instr. and Methods B, Vol. 178 (2001) 279.
[65]  A. Cavaco, N.A. Sobolev, M.C. Carmo, H. Presting, and U. Konig. "Evaluation of the infrared absorption in nm thick heavily boron doped Si1-xGex layers on silicon". J. Materials Science: Materials in Electronics, Vol. 12 (2001) 241.
[66]  N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, and D. Bimberg."Enhanced radiation hardness of InAs/GaAs quantum dot structures". Phys. Status Solidi (b), Vol. 224 (2001) 93.
[67]  Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, and M.C. Carmo."Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation". Electronics Letters, Vol. 37 (2001) 174.
[68]  N.A. Sobolev, A. Cavaco, M.C. Carmo, H. Born, M. Grundmann, F. Heinrichsdorff, R. Heitz, A. Hoffmann, and D. Bimberg. "Influence of electron irradiation on carrier recombination and intradot relaxation in InAs/GaAs quantum dot structures". In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 2001) p. 146.
[69]  R.N. Pereira, W. Gehlhoff, N.A. Sobolev, A.J. Neves and D. Bimberg. "Determination of the W8 and AB5 defect levels in the diamond gap". J. Physics: Condensed Matter, Vol. 13 (2001) 8957.
[70]  R.N. Pereira, A.J. Neves, W. Gehlhoff, N.A. Sobolev, and D. Bimberg. "Photo-EPR studies on the AB3 and AB4 nickel-related defects in diamond". Physica B, Vols. 308-310 (2001) 589.
[71]  R.N. Pereira, A.J. Neves, W. Gehlhoff, N.A. Sobolev, and H. Kanda. "Annealing Study of the Formation of Nickel-Related Paramagnetic Defects in Diamond". Diamond and Related Materials, Vol. 11 (2002) 623.
[72]  N.A. Sobolev, G.D. Ivlev, E.I. Gatskevich, J.P. Leitao, A. Fonseca, M.C. Carmo, A.B. Lopes, D.N. Sharaev, H. Kibbel and H. Presting, "Pulsed laser annealing of Si/Ge superlattices". Materials Science and Engineering C, Vol. 23 (2003) 19.
[73]  R.N. Pereira, W. Gehlhoff, A.J. Neves, and N.A. Sobolev, "Photoexcitation electron paramagnetic resonance studies on nickel-related defects in diamond". J. Phys: Condens. Matter, Vol. 15 (2003) 2493.
[74]  R.N. Pereira, W. Gehlhoff, A.J. Neves, N.A. Sobolev, L. Rino, and H. Kanda, "The effect of high-pressure–high-temperature annealing on paramagnetic defects in diamond". J. Phys: Condens. Matter, Vol. 15 (2003) S2941.
[75]  F. Guffarth, R. Heitz, M. Geller, C.M.A. Kapteyn, H. Born, R. Sellin, A. Hoffmann, D. Bimberg, N.A. Sobolev and M.C. Carmo, "Radiation hardness of InGaAs/GaAs quantum dots". Appl. Phys. Lett., Vol. 82 (2003) 1941.
[76]  A. Cavaco, N.A. Sobolev, M.C. Carmo, F. Guffarth, H. Born, R. Heitz, A. Hoffmann and and D. Bimberg, "Carrier dynamics in particle irradiated InGaAs/GaAs quantum dots". Phys. Status Solidi (c), Vol. 0 (2003) 1177.
[77]  N.A. Sobolev, A. Fonseca, J.P. Leitao, M.C. Carmo, H. Presting and H. Kibbel, "Influence of defects on the luminescence of Ge/Si quantum dots". Phys. Status Solidi (c), Vol. 0 (2003) 1267.
[78]  A. Cavaco, M.C. Carmo, N.A. Sobolev, F. Guffarth, H. Born, R. Heitz, A. Hoffmann and D. Bimberg, "Intradot carrier relaxation in radiation-damaged InGaAs/GaAs quantum dot heterostructures". In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 2003) p. 111.
[79]  N.A. Sobolev, G.D. Ivlev, E.I. Gatskevich, D.N. Sharaev, J.P. Leitao, A. Fonseca, M.C. Carmo, A.B. Lopes, V.V. Shvartsman, A.L. Kholkin, H. Kibbel and H. Presting, "Self-organization phenomena in pulsed laser annealed Si/Ge superlattices". In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 2003) p. 496.
[80]  N.A. Sobolev, A. Fonseca, J.P. Leitao, M.C. Carmo, H. Presting, and H. Kibbel, "Luminescence of Ge/Si quantum dots subjected to radiation damage and hydrogen passivation". In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 2003) p. 144.
[81]  N.V. Baidus, V.K. Vasilev, Yu.A. Danilov, B.N. Zvonkov, P.B. Mokeeva, and N.A. Sobolev."Comparative study of radiation hardness of InGaAs quantum well and quantum dot heterostructures upon ion implantation" (in Russian). In: Design of radiation-hard semiconductor devices for communication systems and precision measurements using noise analysis. (TALAM, Nizhni Novgorod, 2003) p. 59.
[82]  V.L. Shaposhnikov and N.A. Sobolev. "Electronic structure and magnetic properties of doped silicon carbide" J. Phys: Condens. Matter, Vol. 16 (2004) 1761.
[83]  A. Fonseca, N.A. Sobolev, J.P. Leitao, M.C. Carmo, N. Franco, H. Presting, and A.D. Sequeira. "Structural Characterization and Luminescence of Ge/Si Quantum Dots" Materials Science Forum, Vols. 455-456 (2004) 540.
[84]  A.N. Kholod, V.L. Shaposhnikov, N. Sobolev, V.E. Borisenko, F. Arnaud d'Avitaya, and S. Ossicini. "Orientation effects in electronic and optical properties of germanium quantum wires". Phys. Rev. B, Vol. 70 (2004) 035317.
[85]  G.D. Ivlev, E.I. Gatskevich, N.A. Sobolev, J.P. Leitao, A. Fonseca, M.C. Carmo, A.B. Lopes, V.V. Shvartsman, A.L. Kholkin, H. Kibbel, and H. Presting, "Impact of nanosecond laser radiation on a SiGe superlattice" (in Russian). In: Proc. XIV Internat. Workshop "Radiation Physics of Solids", Sevastopol, 5–10.07.2004 (NII PMT Editors, Moscow, 2004) pp. 65–69.
[86]  J.P. Leitao, A. Fonseca, N.A. Sobolev, M.C. Carmo, N. Franco, A.D. Sequeira, T.M. Burbaev, V.A. Kurbatov, M.M. Rzaev, A.O. Pogosov, N.N. Sibeldin, V.A. Tsvetkov, H. Lichtenberger, and F. Schaffler. "Low temperature molecular beam epitaxy of Ge on Si". Materials Science in Semiconductor Processing, Vol. 8 (2005) 35.
[87]  A. Fonseca, N. Franco, E. Alves, N.P. Barradas, J.P. Leitao, N.A. Sobolev, D. Babonneau, D.F. Banhart, H. Presting, V.V. Ulyanov, and A.I. Nikiforov,.
[88]  High resolution backscattering studies of nanostructured magnetic and semiconducting materials. Nucl. Instr. and Methods B, Vol. 241 (2005) 454.
[89]  T.M. Burbaev, V.A. Kurbatov, M.M. Rzaev, A.O. Pogosov, N.N. Sibeldin, V.A. Tsvetkov H. Lichtenberger, F. Schaffler, J.P. Leitao, N.A. Sobolev, and M.C. Carmo. "Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures". Phys. of the Solid State, Vol. 47 (2005) 71.
[90]  J. Biskupek, U Kaiser, H. Lichte, A. Lenk, M. Kawasaki, N. Sobolev, O. Picht, E. Wendler, and W. Wesch, "Magnetic Nanocrystals in Semiconductors". Proc. Microscopy Conference (Davos, Switzerland, August 28-September 2, 2005). PSI Proceedings 05-01 (2005) 246.
[91]  A.I. Nikiforov, V.V. Ulyanov, O.P. Pchelyakov, S.A. Teys, A.K. Gutakovskii, A. Fonseca, J.P. Leitao, and N.A. Sobolev, "Influence of the thickness of the silicon oxide on the properties of germanium nanoislands" (in Russian). In: "Nanophysics and Nanoelectronics", (IFM RAN, Nizhni Novgorod, 2005) vol. 2, p. 330. A. Fonseca, E. Alves, J.P. Leitao, N.A. Sobolev, M.C. Carmo, and A.I. Nikiforov, "Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer". Materials Science and Engineering B, Vols. 124-125 (2005) 462.
[92]  A. Fonseca, E. Alves, J.P. Leitao, N.A. Sobolev, M.C. Carmo, and A.I. Nikiforov, "Ion beam analysis of Ge/Si dots grown on ultrathin SiO2 interlayers". Materials Science Forum, Vols. 514–516 (2006) 1121.
[93]  N.A. Sobolev, M.A. Oliveira, V.S. Amaral, A. Neves, M.C. Carmo, W. Wesch, O. Picht, E. Wendler, U. Kaiser, and J. Heinrich, "Ferromagnetism and Ferromagnetic Resonance in Mn Implanted Si and GaAs". Materials Science Forum, Vols. 514–516 (2006) 280.
[94]  N.A. Sobolev, M.A. Oliveira, V.S. Amaral, A. Neves, M.C. Carmo, W. Wesch, O. Picht, E. Wendler, U. Kaiser, and J. Heinrich, "Ferromagnetism and ferromagnetic resonance in Mn and As coimplanted Si and GaAs". Materials Science and Engineering B, Vol. 126 (2006) 148.
[95]  A. Fonseca, E. Alves, N.P. Barradas, J.P. Leitao, N.A. Sobolev, M.C. Carmo, A.I. Nikiforov, and H. Presting, "RBS/Channeling study of buried Ge quantum dots grown in a Si layer". Nucl. Instr. and Methods B, Vol. 249 (2006) 462.
[96]  S. Magalhaes, A. Fonseca, N. Franco, N.P. Barradas, N.A. Sobolev, R. Hey, H. Grahn, and E. Alves, "Damage behaviour of GaAs/AlAs multilayer structures". Nucl. Instr. and Methods B Vol. 249 (2006) 890.
[97]  A.I. Yakimov, A.V. Dvurechenskii, G.M. Minkov, A.A. Sherstobitov, A.I. Nikiforov, A.A. Bloshkin, N.P. Stepina, J.P. Leitao, N.A. Sobolev, L. Pereira, and M.C. Carmo, "Hopping magnetoresistance in two-dimensional arrays of Ge/Si quantum dots". Phys. Status Solidi (c), Vol. 3 (2006) 296.
[98]  A. Chahboun, N.V. Baidus, P.B. Demina, B.N. Zvonkov, M.J.M. Gomes, A. Cavaco, N.A. Sobolev, M.C. Carmo, and M.I. Vasilevskiy, "Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots". Phys. Status Solidi (a), Vol. 203 (2006) 1348.
[99]  N.P. Stepina, A.I. Yakimov, A.V. Nenashev, A.V. Dvurechenskii, N.A. Sobolev, J.P. Leitao, V.V. Kirienko, A.I. Nikiforov, E.S. Koptev, L. Pereira, and M.C. Carmo, "Photoconductivity in tunneling-coupled Ge/Si quantum dot arrays". J. Exp. Theor. Physics, Vol. 103 (2006) 269.
[100]  A.O. Ankiewicz, N.A. Sobolev, J.P. Leitao, M.C. Carmo, R.N. Pereira, J. Lundsgaard Hansen, and A. Nylandsted Larsen, "Effect of Ge doping on the creation of luminescent radiation defects in MBE Si". Nucl. Instr. and Methods B, Vol. 248 (2006) 127.
[101]  A. Fonseca, N.A. Sobolev, J.P. Leitao, E. Alves, M.C. Carmo, N.D. Zakharov, P. Werner, A.A. Tonkikh, and G.E. Cirlin, "Influence of defects on the optical and structural properties of Ge dots embedded in a Si/Ge superlattice". J. Luminescence, Vol. 121 (2006) 417.
[102]  A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, "Electron Paramagnetic Resonance in Transition Metal-Doped ZnO Nanowires". J. Appl. Phys., Vol. 101 (2007) 024324.
[103]  A.I. Nikiforov, V.V. Ulyanov, S.A. Teys, A.K. Gutakovsky, O.P. Pchelyakov, A.I. Yakimov, A. Fonseca, J.P. Leitao, and N.A. Sobolev, "MBE growth of vertically ordered Ge quantum dots on Si". Phys. Status Solidi (c), Vol. 4 (2007) 262.
[104]  O. Picht, W. Wesch, J. Biskupek, U. Kaiser, M.A. Oliveira, A. Neves, and N.A. Sobolev, "Ion beam synthesis of Mn/As-based clusters in silicon". Nucl. Instr. and Methods B, Vol. 257 (2007) 90.
[105]  A. Fonseca, E. Alves, J. Leitao, N.A. Sobolev, M.C. Carmo, and A.I. Nikiforov, "Optical and structural analysis of Ge/Si quantum dots grown on a Si(001) surface covered with a SiO2 sub-monolayer". International J. Nanoscience, Vol. 6 (2007) 245.
[106]  A.O. Ankiewicz, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, and N.A. Sobolev, "Electron Paramagnetic Resonance Characterization of Mn-and Co-Doped ZnO Nanowires", AIP Conference Proceedings, Vol. 893 (2007) 63.
[107]  N.P. Stepina, A.I. Yakimov, A.V. Nenashev, A.V. Dvurechenskii, A.I. Nikiforov, E.S. Koptev, J.P. Leitao, N.A. Sobolev, and M.C. Carmo, "Effect of Light Illumination on the Conductivity of Tunnel-coupled Ge/Si Quantum Dots", AIP Conference Proceedings, Vol. 893 (2007) 811.
[108]  N.A. Sobolev, M.A. Oliveira, R.M. Rubinger, A.J. Neves, M.C. Carmo, V.P. Lesnikov, V.V. Podolskii, Yu.A. Danilov, E.S. Demidov, and G.N. Kakazei, "Ferromagnetic resonance and Hall effect characterization of GaMnSb layers". J. Superconductivity and Novel Magnetism, Vol. 20 (2007) 399.
[109]  J.P. Leitao, N.M. Santos, N.A. Sobolev, M.R. Correia, N.P. Stepina, M.C. Carmo, S. Magalhaes, E. Alves, A.V. Novikov, M.V. Shaleev, D.N. Lobanov, and Z.F. Krasilnik, "Radiation hardness of GeSi heterostructures with thin Ge layers". Materials Science and Engineering B, Vol. 147 (2008) 191.
[110]  A.D. Bouravleuv, S. Mitani, R.M. Rubinger, M.C. do Carmo, N.A. Sobolev, T. Ishibashi, A. Koukitu, K. Takanashi, and K. Sato, "Magnetic properties of MnP nanowhiskers grown by MBE". Physica E, Vol. 40 (2008) 2037.
[111]  A.S. Pereira, A.O. Ankiewicz, W. Gehlhoff, A. Hoffmann, S. Pereira, T. Trindade, M. Grundmann, M.C. Carmo, and N.A. Sobolev, "Surface modification of Co-doped ZnO nanocrystals and its effects on the magnetic properties". J. Appl. Phys., Vol. 103 (2008) 07D140.
[112]  G.N. Kakazei, P.P. Martin, A. Ruiz, M. Varela, M. Alonso, E. Paz, F.J. Palomares, F. Cebollada, R.M. Rubinger, M.C. Carmo, and N.A. Sobolev, romagnetic resonance of ultra-thin Co/Ag superlattices on Si(111)". J. Appl. Phys., Vol. 103 (2008) 07B527.
[113]  A.F. Zinovieva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov, R. Rubinger, N.A. Sobolev, J.P. Leitao, and M.C. Carmo, "Spin resonance of electrons localized on Ge/Si quantum dots". Phys. Rev. B, Vol. 77 (2008) 115319.
[114]  N.P. Stepina, A.V. Dvurechenskii, V.A. Ambrister, J.V. Smagina, V.A. Volodin, A.V. Nenashev, J.P. Leitao, M.C. Carmo, and N.A. Sobolev, "MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiation". Thin Solid Films, Vol. 517 (2008) 309.
[115]  J.P. Leitao, N.A. Sobolev, M.R. Correia, M.C. Carmo, N. Stepina, A. Yakimov, A. Nikiforov, S. Magalhaes, and E. Alves, "Electronic properties of Ge islands embedded in multilayer and superlattice structures". Thin Solid Films, Vol. 517 (2008) 303.
[116]  M.S. Reis, R. Rubinger, N.A. Sobolev, M.A. Valente, K. Yamada, K. Sato, Y. Todate, A. Bouravleuv, P.J. von Ranke, and S. Gama, "Influence of the strong magnetocrystalline anisotropy on the magnetocaloric properties of MnP single crystal". Phys. Rev. B, Vol. 77 (2008) 104439.
[117]  A. Chahboun, M.I. Vasilevskiy, N.V. Baidus, A. Cavaco, N.A. Sobolev, M.C. Carmo, E. Alves, and B.N. Zvonkov, "Further insight into the temperature quenching of photoluminescence from InAs/GaAs self-assembled quantum dots". J. Appl. Phys., Vol. 103 (2008) 083548.
[118]  N.A. Sobolev, "Radiation effects in quantum dot structures". In: Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, ed. by M. Henini (Elsevier, Amsterdam et al., 2008), Chapter 13, pp. 392-447.
[119]  V.A. Khomchenko, D.A. Kiselev, J.M. Vieira, R.M. Rubinger, N.A. Sobolev, M. Kopcewicz, V.V. Shvartsman, W. Kleemann, M. Maglione, and A.L. Kholkin, "Coexistence of spontaneous ferroelectricity and weak ferromagnetism in Bi0.8Pb0.2FeO2.9 perovskite". J. Phys.: Condens. Matter, Vol. 20 (2008) 155207.
[120]  S. Magalhaes, N.A. Sobolev, N.V. Abrosimov, and E. Alves, "Study of SiGe alloys with different germanium concentrations implanted with Mn and As ions". Materials Science Forum, Vols. 587-588 (2008) 298.
[121]  A.V. Chernenko, A.S. Brichkin, N.A. Sobolev, V.D. Kulakovskii, "Non-radiative recombination of e-h complexes in semimagnetic quantum dot structures". In: "Nanostructures: Physics and Technology", Proc. 16th Int. Symp., Vladivostok, Russia, July 14-18, 2008 (Ioffe Physico-Technical Institute, St. Petersburg, Russia, 2008) p. 228.
[122]  A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, and N.A. Sobolev, "Magnetic and structural properties of transition metal doped zinc-oxide nanostructures". Phys. Status Solidi (b), Vol. 246 (2009) 766.
[123]  A.F. Zinovieva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov, R.M. Rubinger, N.A. Sobolev, J.P. Leitao, and M.C. Carmo, "Asymmetry effect on the spin relaxation in quantum dot structures". Phys. Status Solidi (c), Vol. 6 (2009) 833.
[124]  Yu.A. Danilov, A.V. Kudrin, O.V. Vikhrova, B.N. Zvonkov, Yu.N. Drozdov, M.V. Sapozhnikov, S. Nicolodi, E.R. Zhiteytsev, N.M. Santos, M.C. Carmo, and N.A. Sobolev, "Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs". J. Phys. D: Appl. Phys., Vol. 42 (2009) 035006.
[125]  M. Steinert, W. Wesch, A. Undisz, M. Rettenmayr, W.C. Nunes, R.P. Borges, M. Godinho, R.M. Rubinger, M.C. Carmo, and N.A. Sobolev, "Ion beam synthesis of Mn/Sb clusters in silicon". J. Phys. D: Appl. Phys., Vol. 42 (2009) 035406.
[126]  W. Wesch, O. Picht, M. Steinert, A. Undisz, M. Rettenmayr, U. Kaiser, J. Biskupek, and N.A. Sobolev, "Ion beam synthesis of transition metal nanoclusters in silicon" (invited). AIP Conference Proceedings, Vol. 1099 (2009) 369.
[127]  V.A. Khomchenko, D.A. Kiselev, M. Kopcewicz, M. Maglione, V.V. Shvartsman, P. Borisov, W. Kleemann, A.M.L. Lopes, Y.G. Pogorelov, J.P. Araujo, R.M. Rubinger, N.A. Sobolev, J.M. Vieira, and A.L. Kholkin, "Doping strategies for increased performance in BiFeO3". J. Magn. Magn. Mater., Vol. 321 (2009) 1692.
[128]  V.E. Kaydashev, E.M. Kaidashev, M. Peres, T. Monteiro, M.R. Correia, and N.A. Sobolev, "Optical and structural properties of ZnO nanorods grown by pulsed laser deposition without catalyst" Technical Physics, Vol. 54 (2009) 1607.
[129]  A.V. Chernenko, A.S. Brichkin, V.D. Kulakovskii, N.A. Sobolev, and S.V. Ivanov, Effect of Mn Ions on Spin Relaxation and Life-Time of e-h Complexes in CdSe/ZnSe/ZnMnSe Quantum Dots". Internat. J. Modern Physics B, Vol. 23 (2009) 2984.
[130]  S.S. Nair, Li Jian, I. Salvado, N.A. Sobolev, A.L. Kholkin, "Synthesis and Characterization of Nanograined PZT-NiFe2O4-PZT Sandwiched Layers". In: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore et al., 2009), p. 621.
[131]  N.A. Sobolev, "Radiation Effects in Low Dimensional Semiconductor Structures" (invited). In: Proc. VI Intern. Conf. on Microelectronics and Computer Science, Chisinau, Moldova, October 1–3, 2009 (Chisinau, UTM, 2009) p. 53.
[132]  V.E. Kaydashev, E.M. Kaidashev, M. Peres, T. Monteiro, M.R. Correia, N.A. Sobolev, L.C. Alves, N. Franco, and E. Alves, "Structural and optical properties of Zn0.9Mn0.10/ZnO core-shell nanowires designed by pulsed laser deposition". J. Appl. Phys., Vol. 106 (2009) 093501.
[133]  N.M. Santos, B.P. Falcao, J.P. Leitao, N.A. Sobolev, M.C. Carmo, N.S. Stepina, A. Yakimov, and A.I. Nikiforov, "Optical study of strained double Ge/Si quantum dot layers". IOP Conf. Series: Mater. Sci. and Engineering, Vol. 6 (2009) 012018.
[134]  N.M. Santos, J.P. Leitao, N.A. Sobolev, M.R. Correia, M.C. Carmo, E. Kasper, and J. Werner, "Photoluminescence and Raman study of a tensely strained Si type-II quantum well on a relaxed SiGe graded buffer". IOP Conf. Series: Mater. Sci. and Engineering, Vol.6 (2009) 012023.
[135]  V.E. Kaidashev, E.M. Kaidashev, M. Peres, T. Monteiro, M.R. Correia, J.S. Martins, N.A. Sobolev, and O.V. Misochko, "Structural and optical properties of Zn0, 9Mn0, 1O/ZnO core-shell nanorods and Zn0, 9Mn0, 1O nanowires obtained by pulsed laser deposition" (in Russian).In: Order, Disorder and Properties of Oxides. Proc. 12th International Meeting. (Loo, Russia, 2009) p. 233.
[136]  V.E. Kaidashev, O.V. Misochko, M.R. Correia, M. Peres, T. Monteiro, N.A. Sobolev, and E.M. Kaidashev, "Raman Scattering on Overtones of Fully Symmetric LO Phonons in Zn0.9Mn0.1O Nanocrystals under Resonance Excitation Conditions". Tech. Phys. Lett., Vol. 35 (2009) 1086.
[137]  F. Oliveira, M.F. Cerqueira, M.I. Vasilevskiy, T. Viseu, J. Ayres de Campos, A.G. Rolo, J.S. Martins, N.A. Sobolev, E. Alves, "Room-temperature paramagnetism of ZnO:Mn films grown by RF-sputtering". Thin Solid Films, Vol. 518 (2010) 4612.
[138]  A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, Shengqiang Zhou, H. Schmidt, and N.A. Sobolev, "Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO". J. Appl. Phys., Vol. 107 (2010) 09B518.
[139]  A.F. Zinovieva, A.S. Lyubin, N.P. Stepina, E.S. Koptev, A.I. Nikiforov, A.V. Dvurechenskii, N.A. Sobolev, M.C. Carmo, "Spin dynamics in two-dimensional arrays of quantum dots with different shapes". J. Phys.: Conf. Ser., Vol. 245 (2010) 012052.
[140]  A.C. Lourenco, F. Figueiras, S. Das, J.S. Amaral, G.N. Kakazei, D.V. Karpinsky, N. Soares, M. Peres, M.J. Pereira, N.M. Santos, P.B. Tavares, N.A. Sobolev, V.S. Amaral, and A.L. Kholkin, "Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films from Two Different Targets via rf Magnetron Sputtering". Materials and Physics of Nonvolatile Memories, MRS Proceedings, Vol. 1250 (2010) p. 101.
[141]  J. Zippel, M. Lorenz, A. Setzer, G. Wagner, N. Sobolev, P. Esquinazi, and M. Grundmann, "Defect-induced ferromagnetism in undoped and Mn-doped zirconia thin films". Phys. Rev. B, Vol. 82 (2010) 125209.
[142]  A.V. Chernenko, P.S. Brichkin, N.A. Sobolev and M.C. Carmo, "Manganese-Assisted Non-Radiative Recombination in Semimagnetic Quantum Dots". J. Phys.: Cond. Matter, Vol. 22 (2010) 355306.
[143]  V.A. Khomchenko, D.V. Karpinsky, A.L. Kholkin, N.A. Sobolev, G.N. Kakazei, J.P. Araújo, I.O. Troyanchuk, B.F.O. Costa, and J.A. Paixao, "Rhombohedral-to-orthorhombic transition and multiferroic properties of Dy-substituted BiFeO3". J. Appl. Phys., Vol.108 (2010) 074109.
[144]  G.N. Kakazei, N.M. Santos, C. Quiros, M. Velez, J.I. Martin, J.M. Alameda, V.O. Golub, O.Y. Saliuk, Yu.G. Pogorelov, J.B. Sousa, M.C. Carmo, and N.A. Sobolev, "Magnetic
[145]  properties of amorphous Co0.74Si0.26/Si multilayers with different number of periods". Low Temp. Physics, Vol. 36 (2010) 821.
[146]  R. Rai, K. Verma, S. Sharma, S.S. Nair, M.A. Valente, A.L. Kholkin, and N.A. Sobolev, "Structure and magnetic properties of Cd doped copper ferrite". J. Alloys and Compounds, Vol. 509 (2011) 7585.
[147]  D.V. Karpinsky, I.O. Troyanchuk, J.V. Vidal, N.A. Sobolev, A.L. Kholkin, "Enhanced ferroelectric, magnetic and magnetoelectric properties of Bi1-xCaxFe1-xTixO3 solid solutions". Solid State Commun., Vol. 151 (2011) 536.
[148]  N. Kalanda, S. Demyanov, W. Masselink, A. Mogilatenko, M. Chashnikova, N. Sobolev, O. Fedosenko, "Interplay between phase formation mechanisms and magnetism in the Sr2FeMoO6–δ metal-oxide compound". Crystal Res. Technol., Vol. 46 (2011) 463.
[149]  R. Rai, K. Verma, S. Sharma, S.S. Nair, M.A. Valente, A.L. Kholkin, and N.A. Sobolev. "Study of structural and ferromagnetic properties of pure and Cd doped copper ferrite". J. Phys. Chem. Solids, Vol. 72 (2011) 862.
[150]  G.K. Strukova, G.V. Strukov, S.I. Bozhko, Yu.P. Kabanov, I.M. Shmytko, A.A. Mazilkin, N.A. Sobolev, E.R. Zhiteytsev, A.А. Suhanov, V.K. Voronkova, and L. Tagirov, "Structure and magnetic properties of nanostructured Pd–Fe thin films produced by pulsed electrodeposition". In press in J. Nanosci. and Nanotechnol., doi: 10.1166/jnn.2011.3460.
[151]  J. Rodrigues, M. Peres, A.J.S. Fernandes, M.P.F. Graca, N.A. Sobolev, F.M. Costa, T. Monteiro, "Structural, optical and magnetic resonance properties of TiO2 fibres grown by laser floating zone technique". Under review in Appl. Surface Sci.
[152]  M. Kakazey, M. Vlasova, P.A. Márquez Aguilar, B. Sosa Coeto, R. Gurdian Tapia, and N.A. Sobolev, "Reaction processes in a ZnO+1%Gd2O3 powder mixture during mechanical and laser processing". Submitted to Mater. Sci. Eng. B.
[153]  C.T. Sousa, D.C. Leitao, M.P. Proenca, A. Apolinário, A.M. Azevedo, N.A. Sobolev, S.A. Bunyaev, Yu.G. Pogorelov, J. Ventura, J.P. Araújo, G.N. Kakazei, "Probing the quality of Ni filled nanoporous alumina templates by magnetic techniques". Submited to J. Nanosci. and Nanotechnol.