Electrical and Electronic Engineering

Electrical and Electronic Engineering is an open access journal that provides rapid publication of articles in all areas of the subject. The journal welcomes the submission of manuscripts that meet the general criteria of significance and scientific excellence.


Farid Medjdoub

Editorial Board Member of Electrical and Electronic Engineering

Associate Professor, Institute of Electronic, Microelectronic and Nanotechnology, France

Research Areas

Electrical Engineering

Education

2004Ph.DInstitute of Electronic, Microelectronic and Nanotechnology (IEMN), Lille, France
2001MasterUniversity of Lille, France

Experience

presentSenior scientist CNRS,IEMN-CNRS, Villeneuve d'Ascq, France
2008-2010Senior scientist on GaN power devices, IMEC, Leuven (Belgium)
2005-2008Research Associate, Department of Electron Devices and Circuits, University of Ulm, Germany
2001-2004Research Assistant, Institute of Electronic, Microelectronic and Nanotechnology, European project driven by UMS (United Monolithic Semiconductors), France/Germany.

Publications: Journals

[1]  Boundary Conditions for realistic simulation of ultra short Pseudomorphic HEMT on InP substrates F. Medjdoub, F. Dessenne, J.L. Thobel, M. Zaknoune, D. Théron, Solid State Electronics, Vol. 48, No. 5, pp. 683-688, 2004.
[2]  InP HEMT downscaling for power applications at W band F. Medjdoub, M. Zaknoune, X. Wallart, and D. Théron, IEEE Transactions on Electron Devices, Vol. 52, No. 10, pp. 2136-2143, 2005.
[3]  High performances of InP channel power HEMT at 94 GHz F. Medjdoub, M. Zaknoune, X. Wallart, C. Gaquière and D. Théron, Electronics Letters, Vol. 41, No. 25, pp. 1406-1408, 2005.
[4]  94 GHz high power performances of InAsP channel HEMTs on InP F. Medjdoub, M. Zaknoune, X. Wallart, C. Gaquière and D. Théron, Electronics Letters, Vol. 41, No. 13, pp. 769-771, 2005.
[5]  Power Measurement Setup for Large Signal Microwave Characterization at 94 GHz F. Medjdoub, S. Vandenbrouck, C. Gaquiere, E. Delos, M. Zaknoune, and D. Théron, IEEE Microwave and Wireless Components Letters, Vol. 16, No. 4, pp. 218-220, 2006.
[6]  Small signal characteristics of AlInN/GaN HEMTs F. Medjdoub, J.-F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, S. Vandenbrouck, C. Gaquière, J.C. Dejaeger and E. Kohn, Electronics Letters, Vol. 42, No. 13, pp. 779-780, 2006.
[7]  InP channel delivers reliability at 94 GHz http://compoundsemiconductor.net/csc/features-details.php?id=24134 F. Medjdoub et al., Magazine Compound Semiconductor, Vol. 12, No. 1, p. 32, 2006.
[8]  Evaluation of AlInN/GaN HEMTs on Sapphire substrate in the microwave, time and temperature domains F. Medjdoub, D. Ducatteau, C. Gaquière, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean and E. Kohn, Electronics Letters, Vol. 43, No. 5, pp. 71-72, 2007.
[9]  Characteristics of Al2O3/AlInN/GaN MOSHEMT F. Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M. A. di Forte-Poisson, M. Knez, E. Delos, C. Gaquière, S.L. Delage and E. Kohn, Electronics Letters, Vol. 43, No. 12, pp. 691-692, 2007.
[10]  Above 2 A/mm drain current density of GaN HEMTs grown on Sapphire F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn, International Journal of High Speed Electronics and Systems (IJHSES), Vol. 17, No. 1, pp. 91-95, 2007.
[11]  Status of the emerging InAlN/GaN power HEMT devices F. Medjdoub and E. Kohn, The Open Electrical and Electronic Engineering Journal, invited review, Vol 2, 2008.
[12]  Barrier layer scaling of InAlN/GaN HEMTs F. Medjdoub, M. Alomari, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean and E. Kohn IEEE Electron Device Lett., Vol. 29, No. 5, pp. 422-425, 2008.
[13]  Effect of fluoride plasma treatment on InAlN/GaN HEMTs F. Medjdoub, M. Alomari, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, C. Gaquière, N. Grandjean and E. Kohn, Electronics Letters, Vol. 44, No. 11, pp. 696-698, 2008.
[14]  InAlN/GaN MOSHEMT with Self Aligned, Thermally Generated Oxide Recess M. Alomari, F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean A. Chuvilin, U. Kaiser, C. Gaquière and E. Kohn, IEEE Electron Device Lett., Vol. 30, No. 11, pp. 1131-1133, 2009.
[15]  Influence of thermal anneal steps on the current collapse of fluorine treated e-mode SiN/AlGaN/GaN HEMTs A. Lorenz, J. Derluyn, J. Das, K. Cheng, S. Degroote, F. Medjdoub, M. Germain, and G. Borghs Physica Status Solidi, Vol. 6, No. 2, pp. 996-998, 2009.
[16]  GaN-on-Si HEMT stress under high electric field condition D. Marcon, A. Lorenz, J. Derluyn, J. Das, F. Medjdoub, K. Cheng, S. Degroote, M. Leys, R. Mertens, M. Germain, and G. Borghs, Physica Status Solidi, Vol. 6, No. 2, pp. 1024-1026, 2009.
[17]  Low On-resistance High Breakdown Normally-off AlN/GaN/AlGaN DHFET on Si Substrate F. Medjdoub, J. Derluyn, K. Cheng, M. Leys, S. Degroote, D. Marcon, D. Visalli, M. Van Hove, M. Germain and G. Borghs, IEEE Electron Device Lett., vol. 31, issue 2, pp. 111-113, 2010.
[18]  Very Low Sheet Resistance AlInN/GaN HEMT Grown on 100mm Si(111) by MOVPE, K. Cheng, S. Degroote, M. Leys, F. Medjdoub, J. Derluyn, B. Sijmus, M. Germain, and G. Borghs, Phys. status solidi (c), Vol. 7, Issue 7-8, pp. 1967-1969, 2010.
[19]  Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C, D. Marcon, M. Van Hove, D. Visalli, J. Derluyn, J. Das, F. Medjdoub, S. Degroote, M. Leys, K. Cheng, R. Mertens, M. Germain and G. Borghs, Japanese Journal of Applied Physics, Vol. 49, Issue 4, pp. 04DF07-04DF07-4, 2010.
[20]  Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation, F. Medjdoub, M. Van Hove, K. Cheng, D. Marcon, M. Leys and S. Decoutere, IEEE Electron Device Lett., vol. 31, no9, pp. 948-950, 2010.
[21]  Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility-Transistors grown on Silicon, Farid Medjdoub, Malek Zegaoui, Nicolas Waldhoff, Bertrand Grimbert, Nathalie Rolland, and Paul-Alain Rolland, Applied Physics Express, 4 (2011), 064106.
[22]  Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate MEDJDOUB F., ZEGAOUI M., ROLLAND N., ROLLAND P.A., Appl. Phys. Lett., 98, 22 (2011) 223502-1-3.
[23]  High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate MEDJDOUB F., ZEGAOUI M., DUCATTEAU D., ROLLAND N., ROLLAND P.A., IEEE Electron Device Lett. (2011) 874-876.
[24]  Low Noise Microwave Performance of AlN/GaN HEMTs grown on Silicon Substrate F. MEDJDOUB, N. WALDHOFF, M. ZEGAOUI, B. GRIMBERT, N. ROLLAND AND P.A. ROLLAND., IEEE Electron Device Lett. (available online august 8, 2011).