[1] | Jung-Hui Tsai, "Comparative studies on InGaP/GaAs heterostructure-emitter bipolar transistors with tunneling-and superlattice-confinement structures, " J. Electrochemical Society, accepted, 2010. [SCI, EI] NSC 99-2221-E-017-018 |
[2] | Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, and Sheng-Shiun Ye, "A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT), " Semiconductors, accepted, 2011. [SCI, EI] NSC 98-2221-E-017-012 |
[3] | Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hua Huang, Sheng-Shiun Ye, and Yung-Chun Ma, "Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels, " Electron. Lett., Vol. 46, No. 22, pp. 1522-1523, 2010. [SCI, EI] NSC 99-2221-E-017-018 |
[4] | Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, and Ying-Feng Dai, "InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures, " Semiconductors, Vol. 44, No. 8, pp. 1130-1134, 2010. [SCI, EI] NSC 98-2221-E-017-012 |
[5] | Chia-Hua Huang, Jung-Hui Tsai, Tzung-Min Tsai, Kuo-Yen Hsu, Wei-Chen Yang, Hsuan-Wei Huang, and Wen-Shung Lour, "Hydrogen sensor with Pd nanoparticles upon an interfacial layer with oxygen, " Applied Physics Express, Vol. 3, no. 7, pp. 075001 (3 pages), 2010. |
[6] | Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, Jhih-Syuan Sheng, Yung-Chun Ma, and Sheng-Shiun Ye, "Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor, " Appl. Phys. Lett., Vol. 96, No. 6, pp. 063505 (3 pages), 2010. [SCI, EI] NSC 98-2221-E-017-012 |
[7] | Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, and Wen-Chau Liu, "Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor, " Solid-State Electron., Vol. 54, No. 3, pp. 275-278, 2010. [SCI, EI] NSC 97-2221-E-017-012 |
[8] | Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, and Chien-Ming Li, "InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage, " Semiconductors, Vol. 44, No. 2, pp. 223-227, 2010. [SCI, EI] NSC 97-2221-E-017-012 |
[9] | Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, and Wen-Shiung Lour, "InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer, " European Physical Journal Applied Physics, Vol. 48, No. 2, pp. 20303 (5 pages), November, 2009. [SCI, EI] NSC 98-2221-E-017-012 |
[10] | Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, "Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure, " Sens. Actuators B, Vol.141, No. 2, pp. 532-537, 2009. [SCI, EI] |
[11] | Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, "Integrated hydrogen-sensing amplifier with GaAs Schottky-type diode and InGaP–GaAs heterojunction bipolar transistor, " IEEE Electron Device Lett., Vol. 30, No.9, pp. 898-900, 2009. [SCI, EI] |
[12] | Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Comprehensive investigation on planar type of Pd–GaN hydrogen sensors, " International Journal of Hydrogen Energy, Vol. 34, No. 13, pp. 5604-5615, 2009. [SCI, EI] |
[13] | Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, "InGaP/GaAs/InGaAs-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure, " Electron. Lett., Vol. 45, No. 11, pp. 572-573, 2009. [SCI, EI] NSC 97-2221-E-017-012 |
[14] | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, and Der-Feng Guo, "High-performance InGaP/GaAs pnp-doped heterojunction bipolar transistor, " Semiconductor, Vol.43, No. 7, pp. 939-942, 2009. [SCI, EI] NSC 97-2221-E-017-012 |
[15] | Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance, " Sens. Actuators B, Vol.138, No. 2, pp. 422-427, 2009. [SCI, EI] |
[16] | Shao-Yen Chiu, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Hsuan-Wei Huang, Jung-Hui Tsai and Wen-Shiung Lour, "GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration, " Jpn. J. Appl. Phys., Vol. 48, No. 4, pp. 041002 (5 pages), 2009. [SCI, EI] |
[17] | Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, "GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles, " Electron. Lett., Vol. 45, No. 4, p 231-233, 2009. [SCI, EI] |
[18] | Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, "High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2, " Semiconductor Science and Technology, Vol. 24, No. 4, pp. 045007 (4pp), 2009. [SCI, EI] |
[19] | Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu, "On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs), " Solid-State Electron., Vol. 53, No. 2, pp. 190-194, 2009. [SCI, EI] |
[20] | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, "Microwave complementary doped-channel field-effect transistors, " Superlattices & Microstructures, Vol.45, No. 1, pp. 33-38, 2009. [SCI, EI] NSC 96-2221-E-017-012 |
[21] | Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Ku, and Wen-Chau Liu, "Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors, " Electrochem. Solid-State Lett., Vol. 12, No. 2, pp. H41-H43, 2009. [SCI, EI] |
[22] | Li-Yang Chen, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Tsung-Han Tsai, Tzu-Pin Chen, Yi-Chun Liu and Wen-Chau Liu, "Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor, " Semiconductor Science and Technology, Vol. 23, No. 12, pp. 125041 (6pp), 2008. [SCI, EI] |
[23] | Shao-Yen Chiu, Hsuan Wei Huang, Tze Hsuan Huang, Kun Chieh Liang, Kang Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimension dipoles, " IEEE Electron Device Lett., Vol.29, No. 12, pp. 1328-1331, 2008. [SCI, EI] |
[24] | Jung-Hui Tsai, Tzu-Yen Weng, and Chien-Ming Li, "Integration of enhancement/depletion-mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application, " Semiconductor Science and Technology, Vol. 23, No. 7, pp. 075018 (5pp), 2008. [SCI, EI] NSC 96-2221-E-017-012 |
[25] | Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, "Comparison of heterstructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures, Solid-State Electron., Vol. 52, No. 7, pp. 1018-1023, 2008. [SCI, EI] NSC 96-2221-E-017-012 |
[26] | Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, "Investigation on heterostructural optoelectronic switches, " Surface Review and Letters, Vol. 15, No. 1/2, pp. 139-144, 2008. |
[27] | Jung-Hui Tsai, Wen-Chau Liu, Der-Feng Guo, Yu-Chi Kang, Shao-Yen Chiu, and Wen-Shiung Lour, "Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor, " Semiconductor, Vol. 42, No. 3, pp. 346-349, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
[28] | Jung-Hui Tsai, Tzu-Yen Weng and King-Poul Zhu, "Investigation of InGaP/InGaAs n-and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages, " Superlattices & Microstructures, Vol. 43, No. 2, pp. 73-80, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
[29] | Shao-Yen Chiu, Hon-Rung Chen, Wei-Tien Chen, Meng-Kai Hsu, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)2S treatment, " Japanese Journal of Applied Physics, Part 1, Vol. 47, No. 1, pp. 35-42, 2008. |
[30] | Jung-Hui Tsai and Chien-Ming Li, "Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs, " Solid-State Electron., Vol. 52, No.1, pp. 146-149, 2008. [SCI, EI] NSC 95-2221-E-017-013 |
[31] | Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang, and Tzu-Yen Weng, "Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT), " Physica Scripta, T129, pp. 293-296, 2007. [SCI, EI] NSC 95-2221-E-017-013 |
[32] | Jung-Hui Tsai, Chien-Ming Li, Wen-Chau Liu, Der-Feng Guo, Shao-Yen Chiu, and Wen-Shiung Lour, "Integration of n-and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs, " Electron. Lett., Vol. 43, No. 13, pp.732-734, 2007. [SCI, EI] NSC 95-2221-E-017-013 |
[33] | Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng, and Chien-Ming Li, "Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure, " Microelectronics Journal, Vol. 38, No. 6-7 pp. 750-753, 2007. [SCI, EI] NSC 95-2221-E-017-013 |
[34] | Wei-Tien Chen, Hon-Rung Chen, Shao-Yen Chiu, Meng-Kai Hsu, Jung-Hui Tsai, and Wen-Shiung Lour, "Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment, " J. Electrochemical Society, Vol.154, No. 7, pp. 552-556, 2007. [SCI, EI] |
[35] | Tzu-Pin Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour, and Wen-Chau Liu, "Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors, "J. Appl. Phys., Vol. 101, pp. 034501-1-034501-5, 2007. [SCI, EI] |
[36] | Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, "Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector, " J. Electrochemical Society, Vol.154, No. 1, pp. H13-H15, 2007. [SCI, EI] |
[37] | Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, "Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors, " J. Electrochemical Society, Vol. 154, pp. H283-H288, 2007. [SCI, EI] |
[38] | Tzu-Pin Chen, Ssu-I Fu, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, and Wen-Chau Liu, "Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure, " Electrochem. Solid-State Lett., Vol. 10, No. 2, pp. H56-H58, 2007. [SCI, EI] |
[39] | Meng-Kai Hsu, Hon-Rung Chen, Shao-Yen Chiu, Wei-Tien Chen, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Characteristics of mesa-and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate, " Semiconductor Science and Technology, Vol. 22, No. 2, pp. 35-42, 2007. [SCI, EI] |
[40] | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, "Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions, " Materials Chemistry and Physics, Vol. 100, No. 2-3, pp. 340-344, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
[41] | Chun-Wei Chen, Po-Hsien Lai, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai and Wen-Chau Liu, "Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT), " Semiconductor Science and Technology, Vol. 21, No. 9, pp. 1358-1363, 2006. [SCI, EI] |
[42] | Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo, and Wen-Chau Liu, "Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage, " Semiconductor Science and Technology, Vol. 21, No. 8, pp. 1132-1138, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
[43] | T. P. Chen, S. I. Fu, J. H. Tsai, W. S. Lour, D. F. Guo, S. Y. Cheng, and W. C. Liu, "Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor, " Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1733-1737, 2006. [SCI, EI] |
[44] | Jung-Hui Tsai and Yu-Chi Kang, "DC performance of InP/InGaAs pnp heterostructure-emitter bipolar transistor, " IEEE Trans. Electron Devices, Vol. 53, No. 5, pp. 1265-1268, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
[45] | Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, "Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage, " Solid-State Electron., Vol. 50, No. 3, pp. 468-472, 2006. [SCI, EI] NSC 94-2215-E-017-002 |
[46] | Jung-Hui Tsai, "A Novel GaAs field-effect transistor with double camel-like gate structure", IEEE Electron Device Lett., Vol. 26, No. 7, pp. 429-431, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[47] | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor, " European Physical Journal Applied Physics, Vol. 30, No. 3, pp. 167-169, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[48] | Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, and King-Poul Zhu, "Influence of d-doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors, " Superlattices & Microstructures, Vol. 37, No. 3, pp. 203-215, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[49] | Jung-Hui Tsai and Yu-Jui Chu, "Influence of spacer layer on InP/InGaAs d-doped heterojunction bipolar transistors, " Materials Chemistry and Physics, Vol. 91 No. 2-3, pp. 431-436, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[50] | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application, " Solid-State Electron., Vol.49, No. 3, pp. 357-361, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[51] | Jung-Hui Tsai, Ying-Cheng Chu, Shao-Yen Chiu, King-Poul Zhu, Yu-Jui Chu, and Jeng-Shyan Chen, "Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch, " Semiconductor Science and Technology, Vol. 20, No. 2, pp. 152-157, 2005. [SCI, EI] NSC 93-2215-E-017-001 |
[52] | Jung-Hui Tsai, Jeng-Shyan Chen and Yu-Jui Chu, "Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors, " Superlattices & Microstructures, Vol. 37, No.1, pp. 9-17, 2005. [SCI, EI] NSC 92-2218-E-017-001 |
[53] | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches, " Materials Chemistry and Physics, Vol. 87, No. 2-3, pp. 435-438, 2004. [SCI, EI] NSC 93-2215-E-017-001 |
[54] | Jung-Hui Tsai, King-Poul Zhu, Shao-Yen Chiu, and Ying-Cheng Chu, "High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure, " Journal of Vacuum Science and Technology B, Vol. 22, No. 5, pp. 2314-2318, 2004. [SCI, EI] NSC 93-2215-E-017-001 |
[55] | Jung-Hui Tsai, "High-performance AlInAs/GaInAs d-doped HEMT with negative differential resistance switch for logic application", Solid-State Electron., Vol. 48, No. 1, pp. 81-85, 2004. [SCI, EI] NSC 91-2215-E-017-001 |
[56] | Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor, " Electron. Lett., Vol. 39, No. 22, pp. 1611-1612, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
[57] | Jung-Hui Tsai and King-Poul Zhu, "Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure, " Materials Chemistry and Physics, Vol. 82, No. 3, pp. 501-504, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
[58] | Jung-Hui Tsai, "High performances of InP/InGaAs heterojunction bipolar transistors with a d-doped sheet between two spacer layers, "Semiconductor Science and Technology, Vol. 18, No. 12, pp. 1010-1014, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
[59] | Jung-Hui Tsai, "Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature, " Appl. Phys. Lett., Vol. 83, No. 13, pp. 2695-2697, 2003. [SCI, EI] NSC 92-2218-E-017-001 |
[60] | Jung-Hui Tsai, "A novel InGaP/InGaAs/GaAs double d-doped pHEMT with camel-like gate structure, " IEEE Electron Device Lett., Vol. 24, No. 1, pp. 1-3, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
[61] | Jung-Hui Tsai and King-Poul Zhu, "Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature, " Solid-State Electron., Vol. 47, No. 6, pp. 1055-1059, 2003. [SCI, EI] NSC 91-2215-E-017-001 |
[62] | Jung-Hui Tsai, "Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor, " Solid-State Electron., Vol. 46, No. 1, pp. 45-48, 2002. [SCI, EI] NSC 90-2215-E-017-001 |
[63] | Jung-Hui Tsai, "InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles, " Materials Chemistry and Physics, Vol. 73, No. 2-3, pp 170-173, 2002. [SCI, EI] NSC 89-2215-E-017-001 |
[64] | Wen-Chau Liu, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Cheng-Zu Wu, Kuan-Po Lin, and Chih-Hung Yen, "On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations, " IEEE Trans. Electron Devices, Vol. 48, No. 8, pp. 1522-1530, 2001. |
[65] | Jung-Hui Tsai, "Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure, " Solid-State Electron., Vol. 45, No. 12, pp.2045-2049, 2001. [SCI, EI] NSC 89-2215-E-017-001 |
[66] | Jung-Hui Tsai, "Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors, " Jpn. J. Appl. Phys., Vol. 40, No. 10, pp.5865-5870, 2001. [SCI, EI] NSC 90-2215-E-017-001 |
[67] | Wang WC, His-Jen Pan, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, "Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures, " Superlattices & Microstructures, Nol. 29, No. 2, pp. 133-145, 2001. [SCI, EI] |
[68] | Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng, Wen-Lung Chang, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, "Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor, " Jpn. J. Appl. Phys., Vol. 40, No. 1, pp.24-27, 2001. |
[69] | Shiou-Ying Cheng, His-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai, and Wen-Chau Liu, "A new wide voltage operation regime double heterojunction bipolar transistor, " Solid-State Electron., Vol. 44, No. 4, pp. 581-585, 2000. [SCI, EI] |
[70] | Jung-Hui Tsai, "A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena, " Solid-State Electron., Vol. 44, No. 6, pp. 1049-1053, 2000. [SCI, EI] NSC 89-2215-E-270-003 |
[71] | Jung-Hui Tsai, "Application of AlGaAs/GaAs/InGaAs heterostructure emitter for resonant tunneling transistor ", Appl. Phys. Lett., Vol. 75, No. 17, pp. 2668-2670, 1999. [SCI, EI] NSC 89-2215-E-270-003 |
[72] | Jung-Hui Tsai, "Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base, " Microelectronics Reliability, Vol. 39, No. 9, pp. 1379-1387, 1999. [SCI, EI] NSC 89-2215-E-270-003 |
[73] | Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, and Wen-Chau Liu, "Superlatticed negative differential-resistance heterojunction bipolar transistor, " J. Vac. Sci. & Technol. B, Vol. 17, No. 4, pp.1447-1481, 1999. [SCI, EI] |
[74] | Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, and Wen-Chau Liu, "Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT), " Solid-State Electron., Vol. 43, No. 4, No. 1-2, pp. 755-760, 1999. [SCI, EI] |
[75] | Jung-Hui Tsai, Shiou-Ying Cheng, Hui-Jung Shih, and Wen-Chau Liu, "Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure, " superlattices & Microstructures, Vol. 24, N0.3, pp.189-195, 1998. [SCI, EI] |
[76] | Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, Wen-Chau Liu, and Hao-Hsiung Lin, "An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT), " superlattices & Microstructures, Vol. 23, No.6, pp.1297-1307, 1998. [SCI, EI] |
[77] | Po-Hung Lin, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu, and Jung-Hui Tsai, "Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)", Materials Chemistry and Physics, Vol. 57, No. 1, pp. 77-80, 1998. [SCI] |
[78] | Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, and W. L. Chang, " Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's), " Thin solid film, Vol.324, pp.219-224, 1998. [SCI, EI] |
[79] | Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Shiou-Ying Cheng, and Wen-Chau Liu, "Investigation of step-doped channel heterostructure field-effect transistor, " IEE Proceedings-Circuits, Devices and Systems, Vol. 144, No. 5, pp. 309-312, 1997. [SCI, EI] |
[80] | Jung-Hui Tsai, Wen-Shiung Lour, Hui-Jung Shih, Wen-Chau Liu and Hao-Hsiung Lin, "Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors, " Semiconductor Science and Technology, Vol. 12, No. 9, pp. 1135-1139, 1997. [SCI, EI] |
[81] | Wen-Chau Liu, Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, Jing-Yuh Chen, and, Wei-Chou Wang, "InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT), " IEEE Electron Device Lett., Vol. 18, No. 11, pp. 515-517, 1997. [SCI, EI] |
[82] | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, "InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE, " J. Crystal Growth, Vol. 170, No. 4, pp. 438-441, 1997. [SCI, EI] |
[83] | Wen-Chau Liu, Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng, and Jung-Hui Tsai, "Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications, " IEEE Electron Device Lett., Vol. 18, Vol. 4, pp. 129-131, 1997. [SCI, EI] |
[84] | Jung-Hui Tsai, Huey-Ing Chen, and Wen-Chau Liu, "Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer, " Materials Chemistry and Physics, Vol. 51, No. 2, pp. 114-116, 1997. [SCI, EI] |
[85] | Jung-Hui Tsai, Hui-Jung Shih, Shiou-Ying Cheng, and Wen-Chau Liu, "Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure, " Thin solid film, Vol. 304, pp. 201-203, 1997. [SCI, EI] |
[86] | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng, "Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT's) with multiple carrier confinement heterostructures, " Semiconductor Science and Technology, Vol. 12, pp. 614-622, 1997. [SCI, EI] |
[87] | Jung-Hui Tsai, Shiou-Ying Cheng, Po-Hung Lin, Wei-Chou Wang, Jing-Yuh Chen, and Wen-Chau Liu, "Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT's), " Solid-State Electron., Vol. 41, No. 8, pp. 1089-1094, 1997. [SCI, EI] |
[88] | Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Kong-Beng Thei and Cheng-Zu Wu, "A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application, " IEEE Trans. Electron Devices, Vol. 44, No. 4, pp. 520-525, 1997. [SCI, EI] |
[89] | Chin-Chuan Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors, " Jpn. J. Appl. Phys. Vol. 36, No.3A, pp. 980-983, 1997. [SCI, EI] |
[90] | Jung-Hui Tsai, Lih-Wen Laih, Hui-Jung Shih, Wen-Chau Liu, and Hao-Hsiung Lin, "On the recombination currents effect of heterostructure-emitter bipolar transistors, " Solid-State Electron., Vol. 39, No. 12, pp. 1723-1730, 1996. [SCI, EI] |
[91] | Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, and Wen-Chau Liu, "AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT), " Electron. Lett., Vol. 32, No. 18, pp. 1720-1722, 1996. [SCI, EI] |
[92] | Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, "Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET's, " superlattices & Microstructures, Vol. 20, No. 1, pp. 15-23, 1996. [SCI, EI] |
[93] | Kong-Beng Thei, Jung-Hui Tsai, Wen-Chau Liu, and Wen-Shiung Lour, "Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's), " Solid-State Electron., Vol. 39, No. 8, pp. 1137-1142, 1996. [SCI, EI] |
[94] | Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Rong-Chau Liu, and Wen-Chau Liu, "Characteristics of camel-gate structures with active doping channel profiles, " Solid-State Electron., Vol. 39, No. 3, pp. 343-347, 1996. [SCI, EI] |
[95] | Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, "High-performance camel-gate field effect transistor using high-medium-low doped structure, " Appl. Phys. Lett., Vol. 67, No. 18, pp. 2636-2638, 1996. [SCI, EI] |
[96] | Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, and Wen-Chau Liu, "Influence of channel doping-profile on camel-gate field-effect transistors, " IEEE Trans. Electron Devices, Vol. 43, No.6, pp. 871-876, 1996. [SCI, EI] |
[97] | Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Kong-Beng Thei, and Cheng-Zu Wu, "Multiple negative-differential-resistance (NDR) of InGaAp/GaAs heterostructure-emitter bipolar transistor (HEBT), " IEEE Electron Device Lett., Vol. 17, No. 3, pp. 130-132, 1996. [SCI, EI] |
[98] | Wen-Chau Liu, Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, "Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications, " IEEE J. Quantum Electron., Vol. 32, No. 9, pp. 1615-1619, 1996. [SCI, EI] |
[99] | Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Kun-Wei Lin, Shiou-Ying Cheng, and Wen-Chau Liu, "Pseudomorphic step-doped-channel field-effect transistor (SDCFET), " Electron. Lett., Vol. 32, No. 15, pp. 1418-1419, 1996. [SCI, EI] |
[100] | Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT), " Electron. Lett., Vol. 32, No. 21, pp. 2014-2015, 1996. [SCI, EI] |
[101] | Lih-Wen Laih, Wen-Chau Liu, Jung-Hui Tsai, Wei-Chou Hsu, Yuan-Tzu Ting, and Rong-Chau Liu, "Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs structure, " superlattices & Microstructures, Vol. 20, No. 1, pp. 7-13, 1996. [SCI, EI] |
[102] | Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu, and Kong-Beng Thei, and Rong-Chau Liu, "Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure, " Solid-State Electron., Vol. 39, No. 1, pp. 15-20, 1995. [SCI, EI] |
[103] | Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, and Wen-Chau Liu, "Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch, " J. Appl. Phys., Vol. 77, No.6, pp.2782-2785, 1995. [SCI, EI] |
[104] | Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Wei-Chou Hsu, and Wen-Shiung Lour, "Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure, " Appl. Phys. Lett., Vol. 67, No. 3, pp. 404-406, 1995. [SCI, EI] |
[105] | Wen-Chau Liu, Wei-Chou Hsu, Lih-Wen Laih, Jung-Hui Tsai, and Wen-Shiung Lour, "Performances enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing n--GaAs/n+-In0.2Ga0.8As two-layer structure, " Appl. Phys. Lett., Vol. 66, No.12, pp.1524-1526, 1995. [SCI, EI] |
[106] | Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Cheng-Zu Wu, and Kong-Beng Thei, Wen-Shiung Lour, and Der-Feng Guo, "Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor, " superlattices & Microstructures, Vol. 17, No. 4, pp. 445-456, 1995. [SCI, EI] |
[107] | Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, and Wen-Shiung Lour, "Investigation of InGaAs/GaAs doped-channel MIS-like pseudomorphic transistor, " Solid-State Electron., Vol.38, Vo. 10, pp. 1747-1753, 1994. [SCI, EI] |