Electrical and Electronic Engineering

Electrical and Electronic Engineering is an open access journal that provides rapid publication of articles in all areas of the subject. The journal welcomes the submission of manuscripts that meet the general criteria of significance and scientific excellence.


Jung-Hui Tsai

Editorial Board Member of Electrical and Electronic Engineering

Professor, National Kaohsiung Normal University, Taiwan

Research Areas

High-Speed Semiconductor Electronic Devices, III-V Transistors

Education

1997Ph.Delectrical engineering, National Cheng-Kung University, Tainan, TAIWAN
1994M.Scelectrical engineering, National Taiwan-Ocean University, Keelung, TAIWAN
1991B.Scelectrical engineering, Ferg Chia University, Taichung, Taiwan, R.O.C.

Experience

2006-presentProfessor, Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, TAIWAN
2002-2005Professor, Department of Physics, National Kaohsiung Normal University, Kaohsiung, TAIWAN
2000-2002Associate Professor, Department of Physics, National Kaohsiung Normal University, Kaohsiung, TAIWAN
1998-2000Assistant Professor, Department of Physics, National Kaohsiung Normal University, Kaohsiung, TAIWAN
1997-1998Assistant Professor, Department of Electronic Engineering, Chien Kuo Institute of Technology, Chang-Hua, TAIWAN

Publications: Journals

[1]  Jung-Hui Tsai, "Comparative studies on InGaP/GaAs heterostructure-emitter bipolar transistors with tunneling-and superlattice-confinement structures, " J. Electrochemical Society, accepted, 2010. [SCI, EI] NSC 99-2221-E-017-018
[2]  Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, and Sheng-Shiun Ye, "A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT), " Semiconductors, accepted, 2011. [SCI, EI] NSC 98-2221-E-017-012
[3]  Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hua Huang, Sheng-Shiun Ye, and Yung-Chun Ma, "Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels, " Electron. Lett., Vol. 46, No. 22, pp. 1522-1523, 2010. [SCI, EI] NSC 99-2221-E-017-018
[4]  Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, and Ying-Feng Dai, "InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures, " Semiconductors, Vol. 44, No. 8, pp. 1130-1134, 2010. [SCI, EI] NSC 98-2221-E-017-012
[5]  Chia-Hua Huang, Jung-Hui Tsai, Tzung-Min Tsai, Kuo-Yen Hsu, Wei-Chen Yang, Hsuan-Wei Huang, and Wen-Shung Lour, "Hydrogen sensor with Pd nanoparticles upon an interfacial layer with oxygen, " Applied Physics Express, Vol. 3, no. 7, pp. 075001 (3 pages), 2010.
[6]  Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, Jhih-Syuan Sheng, Yung-Chun Ma, and Sheng-Shiun Ye, "Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor, " Appl. Phys. Lett., Vol. 96, No. 6, pp. 063505 (3 pages), 2010. [SCI, EI] NSC 98-2221-E-017-012
[7]  Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, and Wen-Chau Liu, "Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor, " Solid-State Electron., Vol. 54, No. 3, pp. 275-278, 2010. [SCI, EI] NSC 97-2221-E-017-012
[8]  Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, and Chien-Ming Li, "InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage, " Semiconductors, Vol. 44, No. 2, pp. 223-227, 2010. [SCI, EI] NSC 97-2221-E-017-012
[9]  Jung-Hui Tsai, Yuan-Hong Lee, Ning-Feng Dale, and Wen-Shiung Lour, "InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer, " European Physical Journal Applied Physics, Vol. 48, No. 2, pp. 20303 (5 pages), November, 2009. [SCI, EI] NSC 98-2221-E-017-012
[10]  Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, "Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure, " Sens. Actuators B, Vol.141, No. 2, pp. 532-537, 2009. [SCI, EI]
[11]  Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tzung-Min Tsai, Kuo-Yen Hsu, and Wen-Shiung Lour, "Integrated hydrogen-sensing amplifier with GaAs Schottky-type diode and InGaP–GaAs heterojunction bipolar transistor, " IEEE Electron Device Lett., Vol. 30, No.9, pp. 898-900, 2009. [SCI, EI]
[12]  Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Comprehensive investigation on planar type of Pd–GaN hydrogen sensors, " International Journal of Hydrogen Energy, Vol. 34, No. 13, pp. 5604-5615, 2009. [SCI, EI]
[13]  Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, "InGaP/GaAs/InGaAs-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure, " Electron. Lett., Vol. 45, No. 11, pp. 572-573, 2009. [SCI, EI] NSC 97-2221-E-017-012
[14]  Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, and Der-Feng Guo, "High-performance InGaP/GaAs pnp-doped heterojunction bipolar transistor, " Semiconductor, Vol.43, No. 7, pp. 939-942, 2009. [SCI, EI] NSC 97-2221-E-017-012
[15]  Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance, " Sens. Actuators B, Vol.138, No. 2, pp. 422-427, 2009. [SCI, EI]
[16]  Shao-Yen Chiu, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Hsuan-Wei Huang, Jung-Hui Tsai and Wen-Shiung Lour, "GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration, " Jpn. J. Appl. Phys., Vol. 48, No. 4, pp. 041002 (5 pages), 2009. [SCI, EI]
[17]  Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, "GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles, " Electron. Lett., Vol. 45, No. 4, p 231-233, 2009. [SCI, EI]
[18]  Shao-Yen Chiu, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Jung-Hui Tsai and Wen-Shiung Lour, "High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2, " Semiconductor Science and Technology, Vol. 24, No. 4, pp. 045007 (4pp), 2009. [SCI, EI]
[19]  Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, and Wen-Chau Liu, "On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs), " Solid-State Electron., Vol. 53, No. 2, pp. 190-194, 2009. [SCI, EI]
[20]  Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, "Microwave complementary doped-channel field-effect transistors, " Superlattices & Microstructures, Vol.45, No. 1, pp. 33-38, 2009. [SCI, EI] NSC 96-2221-E-017-012
[21]  Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Ghun-Wei Ku, and Wen-Chau Liu, "Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors, " Electrochem. Solid-State Lett., Vol. 12, No. 2, pp. H41-H43, 2009. [SCI, EI]
[22]  Li-Yang Chen, Shiou-Ying Cheng, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, Tsung-Han Tsai, Tzu-Pin Chen, Yi-Chun Liu and Wen-Chau Liu, "Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor, " Semiconductor Science and Technology, Vol. 23, No. 12, pp. 125041 (6pp), 2008. [SCI, EI]
[23]  Shao-Yen Chiu, Hsuan Wei Huang, Tze Hsuan Huang, Kun Chieh Liang, Kang Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimension dipoles, " IEEE Electron Device Lett., Vol.29, No. 12, pp. 1328-1331, 2008. [SCI, EI]
[24]  Jung-Hui Tsai, Tzu-Yen Weng, and Chien-Ming Li, "Integration of enhancement/depletion-mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application, " Semiconductor Science and Technology, Vol. 23, No. 7, pp. 075018 (5pp), 2008. [SCI, EI] NSC 96-2221-E-017-012
[25]  Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, and Yin-Shan Huang, "Comparison of heterstructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures, Solid-State Electron., Vol. 52, No. 7, pp. 1018-1023, 2008. [SCI, EI] NSC 96-2221-E-017-012
[26]  Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung and Wen-Chau Liu, "Investigation on heterostructural optoelectronic switches, " Surface Review and Letters, Vol. 15, No. 1/2, pp. 139-144, 2008.
[27]  Jung-Hui Tsai, Wen-Chau Liu, Der-Feng Guo, Yu-Chi Kang, Shao-Yen Chiu, and Wen-Shiung Lour, "Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor, " Semiconductor, Vol. 42, No. 3, pp. 346-349, 2008. [SCI, EI] NSC 95-2221-E-017-013
[28]  Jung-Hui Tsai, Tzu-Yen Weng and King-Poul Zhu, "Investigation of InGaP/InGaAs n-and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages, " Superlattices & Microstructures, Vol. 43, No. 2, pp. 73-80, 2008. [SCI, EI] NSC 95-2221-E-017-013
[29]  Shao-Yen Chiu, Hon-Rung Chen, Wei-Tien Chen, Meng-Kai Hsu, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)2S treatment, " Japanese Journal of Applied Physics, Part 1, Vol. 47, No. 1, pp. 35-42, 2008.
[30]  Jung-Hui Tsai and Chien-Ming Li, "Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs, " Solid-State Electron., Vol. 52, No.1, pp. 146-149, 2008. [SCI, EI] NSC 95-2221-E-017-013
[31]  Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang, and Tzu-Yen Weng, "Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT), " Physica Scripta, T129, pp. 293-296, 2007. [SCI, EI] NSC 95-2221-E-017-013
[32]  Jung-Hui Tsai, Chien-Ming Li, Wen-Chau Liu, Der-Feng Guo, Shao-Yen Chiu, and Wen-Shiung Lour, "Integration of n-and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs, " Electron. Lett., Vol. 43, No. 13, pp.732-734, 2007. [SCI, EI] NSC 95-2221-E-017-013
[33]  Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng, and Chien-Ming Li, "Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure, " Microelectronics Journal, Vol. 38, No. 6-7 pp. 750-753, 2007. [SCI, EI] NSC 95-2221-E-017-013
[34]  Wei-Tien Chen, Hon-Rung Chen, Shao-Yen Chiu, Meng-Kai Hsu, Jung-Hui Tsai, and Wen-Shiung Lour, "Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment, " J. Electrochemical Society, Vol.154, No. 7, pp. 552-556, 2007. [SCI, EI]
[35]  Tzu-Pin Chen, Ssu-I Fu, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour, and Wen-Chau Liu, "Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors, "J. Appl. Phys., Vol. 101, pp. 034501-1-034501-5, 2007. [SCI, EI]
[36]  Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour and Wen-Chau Liu, "Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector, " J. Electrochemical Society, Vol.154, No. 1, pp. H13-H15, 2007. [SCI, EI]
[37]  Der-Feng Guo, Chih-Hung Yen, Jung-Hui Tsai, Wen-Shiung Lour, and Wen-Chau Liu, "Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors, " J. Electrochemical Society, Vol. 154, pp. H283-H288, 2007. [SCI, EI]
[38]  Tzu-Pin Chen, Ssu-I Fu, Wen-Shiung Lour, Jung-Hui Tsai, Der-Feng Guo, and Wen-Chau Liu, "Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure, " Electrochem. Solid-State Lett., Vol. 10, No. 2, pp. H56-H58, 2007. [SCI, EI]
[39]  Meng-Kai Hsu, Hon-Rung Chen, Shao-Yen Chiu, Wei-Tien Chen, Wen-Chau Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Characteristics of mesa-and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate, " Semiconductor Science and Technology, Vol. 22, No. 2, pp. 35-42, 2007. [SCI, EI]
[40]  Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, "Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions, " Materials Chemistry and Physics, Vol. 100, No. 2-3, pp. 340-344, 2006. [SCI, EI] NSC 94-2215-E-017-002
[41]  Chun-Wei Chen, Po-Hsien Lai, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai and Wen-Chau Liu, "Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT), " Semiconductor Science and Technology, Vol. 21, No. 9, pp. 1358-1363, 2006. [SCI, EI]
[42]  Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo, and Wen-Chau Liu, "Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage, " Semiconductor Science and Technology, Vol. 21, No. 8, pp. 1132-1138, 2006. [SCI, EI] NSC 94-2215-E-017-002
[43]  T. P. Chen, S. I. Fu, J. H. Tsai, W. S. Lour, D. F. Guo, S. Y. Cheng, and W. C. Liu, "Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor, " Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1733-1737, 2006. [SCI, EI]
[44]  Jung-Hui Tsai and Yu-Chi Kang, "DC performance of InP/InGaAs pnp heterostructure-emitter bipolar transistor, " IEEE Trans. Electron Devices, Vol. 53, No. 5, pp. 1265-1268, 2006. [SCI, EI] NSC 94-2215-E-017-002
[45]  Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, "Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage, " Solid-State Electron., Vol. 50, No. 3, pp. 468-472, 2006. [SCI, EI] NSC 94-2215-E-017-002
[46]  Jung-Hui Tsai, "A Novel GaAs field-effect transistor with double camel-like gate structure", IEEE Electron Device Lett., Vol. 26, No. 7, pp. 429-431, 2005. [SCI, EI] NSC 93-2215-E-017-001
[47]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "High-performance InP/InGaAs pnp d-doped heterojunction bipolar transistor, " European Physical Journal Applied Physics, Vol. 30, No. 3, pp. 167-169, 2005. [SCI, EI] NSC 93-2215-E-017-001
[48]  Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, and King-Poul Zhu, "Influence of d-doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors, " Superlattices & Microstructures, Vol. 37, No. 3, pp. 203-215, 2005. [SCI, EI] NSC 93-2215-E-017-001
[49]  Jung-Hui Tsai and Yu-Jui Chu, "Influence of spacer layer on InP/InGaAs d-doped heterojunction bipolar transistors, " Materials Chemistry and Physics, Vol. 91 No. 2-3, pp. 431-436, 2005. [SCI, EI] NSC 93-2215-E-017-001
[50]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application, " Solid-State Electron., Vol.49, No. 3, pp. 357-361, 2005. [SCI, EI] NSC 93-2215-E-017-001
[51]  Jung-Hui Tsai, Ying-Cheng Chu, Shao-Yen Chiu, King-Poul Zhu, Yu-Jui Chu, and Jeng-Shyan Chen, "Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch, " Semiconductor Science and Technology, Vol. 20, No. 2, pp. 152-157, 2005. [SCI, EI] NSC 93-2215-E-017-001
[52]  Jung-Hui Tsai, Jeng-Shyan Chen and Yu-Jui Chu, "Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors, " Superlattices & Microstructures, Vol. 37, No.1, pp. 9-17, 2005. [SCI, EI] NSC 92-2218-E-017-001
[53]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches, " Materials Chemistry and Physics, Vol. 87, No. 2-3, pp. 435-438, 2004. [SCI, EI] NSC 93-2215-E-017-001
[54]  Jung-Hui Tsai, King-Poul Zhu, Shao-Yen Chiu, and Ying-Cheng Chu, "High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure, " Journal of Vacuum Science and Technology B, Vol. 22, No. 5, pp. 2314-2318, 2004. [SCI, EI] NSC 93-2215-E-017-001
[55]  Jung-Hui Tsai, "High-performance AlInAs/GaInAs d-doped HEMT with negative differential resistance switch for logic application", Solid-State Electron., Vol. 48, No. 1, pp. 81-85, 2004. [SCI, EI] NSC 91-2215-E-017-001
[56]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor, " Electron. Lett., Vol. 39, No. 22, pp. 1611-1612, 2003. [SCI, EI] NSC 92-2218-E-017-001
[57]  Jung-Hui Tsai and King-Poul Zhu, "Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure, " Materials Chemistry and Physics, Vol. 82, No. 3, pp. 501-504, 2003. [SCI, EI] NSC 91-2215-E-017-001
[58]  Jung-Hui Tsai, "High performances of InP/InGaAs heterojunction bipolar transistors with a d-doped sheet between two spacer layers, "Semiconductor Science and Technology, Vol. 18, No. 12, pp. 1010-1014, 2003. [SCI, EI] NSC 92-2218-E-017-001
[59]  Jung-Hui Tsai, "Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature, " Appl. Phys. Lett., Vol. 83, No. 13, pp. 2695-2697, 2003. [SCI, EI] NSC 92-2218-E-017-001
[60]  Jung-Hui Tsai, "A novel InGaP/InGaAs/GaAs double d-doped pHEMT with camel-like gate structure, " IEEE Electron Device Lett., Vol. 24, No. 1, pp. 1-3, 2003. [SCI, EI] NSC 91-2215-E-017-001
[61]  Jung-Hui Tsai and King-Poul Zhu, "Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature, " Solid-State Electron., Vol. 47, No. 6, pp. 1055-1059, 2003. [SCI, EI] NSC 91-2215-E-017-001
[62]  Jung-Hui Tsai, "Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor, " Solid-State Electron., Vol. 46, No. 1, pp. 45-48, 2002. [SCI, EI] NSC 90-2215-E-017-001
[63]  Jung-Hui Tsai, "InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles, " Materials Chemistry and Physics, Vol. 73, No. 2-3, pp 170-173, 2002. [SCI, EI] NSC 89-2215-E-017-001
[64]  Wen-Chau Liu, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Cheng-Zu Wu, Kuan-Po Lin, and Chih-Hung Yen, "On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations, " IEEE Trans. Electron Devices, Vol. 48, No. 8, pp. 1522-1530, 2001.
[65]  Jung-Hui Tsai, "Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure, " Solid-State Electron., Vol. 45, No. 12, pp.2045-2049, 2001. [SCI, EI] NSC 89-2215-E-017-001
[66]  Jung-Hui Tsai, "Quantizied resonant-tunneling phenomena of AlGaAs/GaAs/InGaAs heterojunction bipolar transistors, " Jpn. J. Appl. Phys., Vol. 40, No. 10, pp.5865-5870, 2001. [SCI, EI] NSC 90-2215-E-017-001
[67]  Wang WC, His-Jen Pan, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, "Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures, " Superlattices & Microstructures, Nol. 29, No. 2, pp. 133-145, 2001. [SCI, EI]
[68]  Kuo-Hui Yu, Kun-Wei Lin, Chin-Chuan Cheng, Wen-Lung Chang, Jung-Hui Tsai, Shiou-Ying Cheng, and Wen-Chau Liu, "Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor, " Jpn. J. Appl. Phys., Vol. 40, No. 1, pp.24-27, 2001.
[69]  Shiou-Ying Cheng, His-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai, and Wen-Chau Liu, "A new wide voltage operation regime double heterojunction bipolar transistor, " Solid-State Electron., Vol. 44, No. 4, pp. 581-585, 2000. [SCI, EI]
[70]  Jung-Hui Tsai, "A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena, " Solid-State Electron., Vol. 44, No. 6, pp. 1049-1053, 2000. [SCI, EI] NSC 89-2215-E-270-003
[71]  Jung-Hui Tsai, "Application of AlGaAs/GaAs/InGaAs heterostructure emitter for resonant tunneling transistor ", Appl. Phys. Lett., Vol. 75, No. 17, pp. 2668-2670, 1999. [SCI, EI] NSC 89-2215-E-270-003
[72]  Jung-Hui Tsai, "Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base, " Microelectronics Reliability, Vol. 39, No. 9, pp. 1379-1387, 1999. [SCI, EI] NSC 89-2215-E-270-003
[73]  Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, and Wen-Chau Liu, "Superlatticed negative differential-resistance heterojunction bipolar transistor, " J. Vac. Sci. & Technol. B, Vol. 17, No. 4, pp.1447-1481, 1999. [SCI, EI]
[74]  Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, and Wen-Chau Liu, "Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT), " Solid-State Electron., Vol. 43, No. 4, No. 1-2, pp. 755-760, 1999. [SCI, EI]
[75]  Jung-Hui Tsai, Shiou-Ying Cheng, Hui-Jung Shih, and Wen-Chau Liu, "Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure, " superlattices & Microstructures, Vol. 24, N0.3, pp.189-195, 1998. [SCI, EI]
[76]  Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, Wen-Chau Liu, and Hao-Hsiung Lin, "An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT), " superlattices & Microstructures, Vol. 23, No.6, pp.1297-1307, 1998. [SCI, EI]
[77]  Po-Hung Lin, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu, and Jung-Hui Tsai, "Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)", Materials Chemistry and Physics, Vol. 57, No. 1, pp. 77-80, 1998. [SCI]
[78]  Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, and W. L. Chang, " Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's), " Thin solid film, Vol.324, pp.219-224, 1998. [SCI, EI]
[79]  Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Shiou-Ying Cheng, and Wen-Chau Liu, "Investigation of step-doped channel heterostructure field-effect transistor, " IEE Proceedings-Circuits, Devices and Systems, Vol. 144, No. 5, pp. 309-312, 1997. [SCI, EI]
[80]  Jung-Hui Tsai, Wen-Shiung Lour, Hui-Jung Shih, Wen-Chau Liu and Hao-Hsiung Lin, "Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors, " Semiconductor Science and Technology, Vol. 12, No. 9, pp. 1135-1139, 1997. [SCI, EI]
[81]  Wen-Chau Liu, Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, Jing-Yuh Chen, and, Wei-Chou Wang, "InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT), " IEEE Electron Device Lett., Vol. 18, No. 11, pp. 515-517, 1997. [SCI, EI]
[82]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, "InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE, " J. Crystal Growth, Vol. 170, No. 4, pp. 438-441, 1997. [SCI, EI]
[83]  Wen-Chau Liu, Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng, and Jung-Hui Tsai, "Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications, " IEEE Electron Device Lett., Vol. 18, Vol. 4, pp. 129-131, 1997. [SCI, EI]
[84]  Jung-Hui Tsai, Huey-Ing Chen, and Wen-Chau Liu, "Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer, " Materials Chemistry and Physics, Vol. 51, No. 2, pp. 114-116, 1997. [SCI, EI]
[85]  Jung-Hui Tsai, Hui-Jung Shih, Shiou-Ying Cheng, and Wen-Chau Liu, "Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure, " Thin solid film, Vol. 304, pp. 201-203, 1997. [SCI, EI]
[86]  Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng, "Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT's) with multiple carrier confinement heterostructures, " Semiconductor Science and Technology, Vol. 12, pp. 614-622, 1997. [SCI, EI]
[87]  Jung-Hui Tsai, Shiou-Ying Cheng, Po-Hung Lin, Wei-Chou Wang, Jing-Yuh Chen, and Wen-Chau Liu, "Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT's), " Solid-State Electron., Vol. 41, No. 8, pp. 1089-1094, 1997. [SCI, EI]
[88]  Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Kong-Beng Thei and Cheng-Zu Wu, "A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application, " IEEE Trans. Electron Devices, Vol. 44, No. 4, pp. 520-525, 1997. [SCI, EI]
[89]  Chin-Chuan Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors, " Jpn. J. Appl. Phys. Vol. 36, No.3A, pp. 980-983, 1997. [SCI, EI]
[90]  Jung-Hui Tsai, Lih-Wen Laih, Hui-Jung Shih, Wen-Chau Liu, and Hao-Hsiung Lin, "On the recombination currents effect of heterostructure-emitter bipolar transistors, " Solid-State Electron., Vol. 39, No. 12, pp. 1723-1730, 1996. [SCI, EI]
[91]  Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, and Wen-Chau Liu, "AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT), " Electron. Lett., Vol. 32, No. 18, pp. 1720-1722, 1996. [SCI, EI]
[92]  Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, "Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET's, " superlattices & Microstructures, Vol. 20, No. 1, pp. 15-23, 1996. [SCI, EI]
[93]  Kong-Beng Thei, Jung-Hui Tsai, Wen-Chau Liu, and Wen-Shiung Lour, "Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's), " Solid-State Electron., Vol. 39, No. 8, pp. 1137-1142, 1996. [SCI, EI]
[94]  Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Rong-Chau Liu, and Wen-Chau Liu, "Characteristics of camel-gate structures with active doping channel profiles, " Solid-State Electron., Vol. 39, No. 3, pp. 343-347, 1996. [SCI, EI]
[95]  Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, "High-performance camel-gate field effect transistor using high-medium-low doped structure, " Appl. Phys. Lett., Vol. 67, No. 18, pp. 2636-2638, 1996. [SCI, EI]
[96]  Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, and Wen-Chau Liu, "Influence of channel doping-profile on camel-gate field-effect transistors, " IEEE Trans. Electron Devices, Vol. 43, No.6, pp. 871-876, 1996. [SCI, EI]
[97]  Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Kong-Beng Thei, and Cheng-Zu Wu, "Multiple negative-differential-resistance (NDR) of InGaAp/GaAs heterostructure-emitter bipolar transistor (HEBT), " IEEE Electron Device Lett., Vol. 17, No. 3, pp. 130-132, 1996. [SCI, EI]
[98]  Wen-Chau Liu, Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, "Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications, " IEEE J. Quantum Electron., Vol. 32, No. 9, pp. 1615-1619, 1996. [SCI, EI]
[99]  Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Kun-Wei Lin, Shiou-Ying Cheng, and Wen-Chau Liu, "Pseudomorphic step-doped-channel field-effect transistor (SDCFET), " Electron. Lett., Vol. 32, No. 15, pp. 1418-1419, 1996. [SCI, EI]
[100]  Lih-Wen Laih, Cheng-Zu Wu, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT), " Electron. Lett., Vol. 32, No. 21, pp. 2014-2015, 1996. [SCI, EI]
[101]  Lih-Wen Laih, Wen-Chau Liu, Jung-Hui Tsai, Wei-Chou Hsu, Yuan-Tzu Ting, and Rong-Chau Liu, "Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs structure, " superlattices & Microstructures, Vol. 20, No. 1, pp. 7-13, 1996. [SCI, EI]
[102]  Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu, and Kong-Beng Thei, and Rong-Chau Liu, "Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure, " Solid-State Electron., Vol. 39, No. 1, pp. 15-20, 1995. [SCI, EI]
[103]  Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, and Wen-Chau Liu, "Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch, " J. Appl. Phys., Vol. 77, No.6, pp.2782-2785, 1995. [SCI, EI]
[104]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Wei-Chou Hsu, and Wen-Shiung Lour, "Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure, " Appl. Phys. Lett., Vol. 67, No. 3, pp. 404-406, 1995. [SCI, EI]
[105]  Wen-Chau Liu, Wei-Chou Hsu, Lih-Wen Laih, Jung-Hui Tsai, and Wen-Shiung Lour, "Performances enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing n--GaAs/n+-In0.2Ga0.8As two-layer structure, " Appl. Phys. Lett., Vol. 66, No.12, pp.1524-1526, 1995. [SCI, EI]
[106]  Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Cheng-Zu Wu, and Kong-Beng Thei, Wen-Shiung Lour, and Der-Feng Guo, "Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor, " superlattices & Microstructures, Vol. 17, No. 4, pp. 445-456, 1995. [SCI, EI]
[107]  Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, and Wen-Shiung Lour, "Investigation of InGaAs/GaAs doped-channel MIS-like pseudomorphic transistor, " Solid-State Electron., Vol.38, Vo. 10, pp. 1747-1753, 1994. [SCI, EI]

Publications: Conferences/Workshops/Symposiums

[1]  Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ying-Feng Dai, and Wen-Shiung Lour, "InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure, " 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT2010), pp. 1476-1479, Chengdu, China, 2010.
[2]  Jung-Hui Tsai, Der-Feng Guo, Yuan-Hong Lee, Ying-Feng Dai, and Wen-Shiung Lour, "InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure, " 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT2010), pp. 1480-1482, Chengdu, China, 2010.
[3]  Jung-Hui Tsai and Der-Feng Guo, "High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT), " Conference on Avionics, pp. p34, Kaohsiung, Taiwan, 2010.
[4]  Der-Feng Guo and Jung-Hui Tsai, "Investigation in heterostructural optoelectronic devices, " Conference on Avionics, pp. p35, Kaohsiung, Taiwan, 2010.
[5]  Der-Feng Guo, Wen-Chau Liu, and Jung-Hui Tsai, "An optoelectronic switch, " IEEE International Vacuum Electronics Conference (IVEC'09), pp. 395-396, Rome, Italy, 2009. [EI]
[6]  Yi-Jung Liu, Tsung-Yuan Tsai, Jung-Hui Tsai, Wen-Shiung Lour, Chi-Hsiang Hsu, Tai-You Chen, Chien-Chang Huang, and Wen-Chau Liu, "Low-damage GaN-based light-emitting diodes with KOH treatment, " IEDMS'2009 (Symposium D), Taoyuag, 2009.
[7]  Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Chien-Ming Li, and Yuan-Hong Lee, "InGaP/InGaAs doped-channel heterostructure field-effect transistors s for complementary logic inverter application, " 3rd International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies, Manchester, United Kingdom, 2009.
[8]  Jung-Hui Tsai, Der-Feng Guo, Ning-Xing Su, Yin-Shan Huang, and Wen-Chau Liu, "High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure, " The International Conference on Nanophotonics 2009, p.179, Harbin, China, 2009.
[9]  Tsung-Hun Tsai, Chung-Fu Chang, Huey-Ing Chen, Kun-Wei Lin, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "SiO2-passivation based hydrogen gas detector, " The International Conference on Nanophotonics 2009, p.182, Harbin, China, 2009.
[10]  Tzu-Pin Chen, Chi-Jhung Lee, Shiou-Ying Cheng, Jung-Hui Tsai, Kun-Wei Lin, and Wen-Chau Liu, "On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector, " The International Conference on Nanophotonics 2009, pp.183-184, Harbin, China, 2009.
[11]  Li-Yang Chen, Chien-Chang Huang, Shiou-Ying Cheng, Jung-Hui Tsai, Kun-Wei Lin, and Wen-Chau Liu, "High performance heterostructure transistor with graded-doped sheets, " The International Conference on Nanophotonics 2009, pp.185-186, Harbin, China, 2009.
[12]  Shao-Yen Chiu, Chung-Hsien Wu, Jung-Hui Tsai, and Wen-Shiung Lour, "Investigation on electro-optical switch using heterojunction phototransistors with double emitter, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2008) pp. 75-77, 2008. [EI]
[13]  Meng-Kai Hsu, Shao-Yen Chiu, Chung-Hsien Wu, Kang-Ping Liu, Jung-Hui Tsai, and Wen-Shiung Lour, "Investigation of field-plate gate on heterojunction doped-channel field effect transistors, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2008) pp. 105-107, 2008. [EI]
[14]  Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Chien-Ming Li, Yi-Zhen Wu, Ning-Xing Su, and Yin-Shan Huang, "InGaP/GaAs pnp heterojunction bipolar transistor with d-doped sheet between base-emitter junction, " International conference on multi-functional materials and structures, Vol.47-50, pp. 383-386, Hong Kong, 2008. [EI]
[15]  Meng-Kai Hsu, Jung-Hui Tsai, Shao-Yen Chiu, Chung-Hsien Wu, Kum-Chieh Liang, Kang-Ping Liu, Tze-Shuan Huang, and Wen-Shiung Lour, "Application of Schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs), " International conference on multi-functional materials and structures, Vol.47-50, pp. 416-422, 2008. [EI]
[16]  Kuei-Yi Chu, Shiou-Ying Cheng, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han Tsai, Jung-Hui Tsai, and Wen-Chau Liu, "Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors, " The 8th International Workshop on Junction Technology (IWJC), pp.176-178, Shanghai, China, 2008. [EI]
[17]  T. P. Chen, W. H. Chen, K. Y. Chu, L. Y. Chen, C. J. Lee, S. Y. Cheng, J. H. Tsai, and W. C. Liu, "Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure, " 2008 International Workshop on Junction Technology (IWJT2008), Shanghai, pp. 168-171, 2008. [EI]
[18]  L. Y. Chen, S. Y. Cheng, K. Y. Chu, J. H. Tsai, T. P. Chen, T. H. Tsai, and W. C. Liu, "Improved formal passivations of Pseudomorphic high electron mobility transistors, " 2008 International Workshop on Junction Technology (IWJT2008), Shanghai, pp. 183-186, 2008. [EI]
[19]  Der-Feng Guo, Jung-Hui Tsai, Chien-Ming Li, "A pnpn GaAs-InGaAs optoelectronic switch, " Proc. 2007 International Conference on Microelectronics, pp.446-448, Cairo, Egypt, Dec. 29-31, 2007.
[20]  Der-Feng Guo, Jung-Hui Tsai, and Tzu-Yen Weng, "An Optoelectronic Switch with Multiple Operation States, " IEEE 19th International Conference onIndium Phosphide & Related Materials (IPRM '07), pp. 252-255, 2007. [EI]
[21]  Yan-Ying Tsai, Shiou-Ying Cheng, Jung-Hui Tsai, Der-Feng Guo, Huey-Ing Chen, and Wen-Chau Liu, "A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor, "International Solid-State Sensors, Actuators and Microsystems Conference TRANSDUCERS, pp. 2047-2050, 2007. [EI]
[22]  C. W. Hung, H. I. Chen, D. F. Guo, J. H. Tsai, S. Y. Cheng, Y. Y. Tsai, T. P. Chen, and W. C. Liu, "Hydrogen Sensing Characteristics of a Pd/GaAs Semiconductor Transistor-Type Sensor, " "International Solid-State Sensors, Actuators and Microsystems Conference TRANSDUCERS, pp. 2043-2046, 2007. [EI]
[23]  Jung-Hui Tsai, Der-Feng Guo, and Ming-Yue Fu, "Optoelectronic switch with S-shaped negative differential resistance, " Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC), pp. 758-759, Kanagawa, Japan, 2007.
[24]  Der-Feng Guo, Jung-Hui Tsai, and Ming-Yue Fu, "A multiple-operation-state optoelectronic switch, " Proc. Optoelectronics and Communications Conference (OECC)/International Conference on Integrated Optics and Optical Fiber Communication (IOOC), pp. 506-507, Kanagawa, Japan, 2007.
[25]  Der-Feng Guo, Jung-Hui Tsai, Tzu-Yen Weng, Chih-Hung Yeng, Po-Hsien Lai, Ssu-Yi Fu, Ching-Wen Hung, and Wen-Chau Liu, "Investigation on heterostructural optoelectronic switches, " 2nd International Symposium on Functional Materials (ISFM-2007), p. 77, Hangzhou, China, 2007. [EI]
[26]  Ssu-Yi Fu, Tzu-Pin Chen, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Improved performance of a composite passivate heterojunction bipolar transistor (HBT), " 2nd International Symposium on Functional Materials (ISFM-2007), p. 93, Hangzhou, China, 2007. [EI]
[27]  Po-Hsien Lai, Yi-Wen Huang, Shiou-Ying Cheng, Jung-Hui Tsai, and Wen-Chau Liu, "Sulphur passivation on an InGaP/InGaAs/GaAs Pseudomorphic high electron mobility transistor (PHEMT), " 2nd International Symposium on Functional Materials (ISFM-2007), p. 93, Hangzhou, China, 2007. [EI]
[28]  Jung-Hui Tsai, Der-Feng Guo, Yu-Chi Kang, and Tzu-Yen Weng, "Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT), " 2nd International Symposium on Functional Materials (ISFM-2007), p. 94, Hangzhou, China, 2007. [EI]
[29]  Jung-Hui Tsai, Der-Feng Guo, Tzu-Yen Weng, and Ching-Han Wu, "Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 141-143, Perth, Australia, 2006. [EI]
[30]  Jung-Hui Tsai, Der-Feng Guo, Tzu-Yen Weng, Yu-Chi Kang, Ching-Han Wu, and I-Hsuan Hsu, "An improved InP/InGaAs pnp HBT with d-doped sheet between emitter-base junction, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 144-147, Perth, Australia, 2006. [EI]
[31]  Tzu-Yen Weng, Jung-Hui Tsai, and Der-Feng Guo, "An optoelectronic switch with multiple operation states, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 90-93, Perth, Australia, 2006. [EI]
[32]  Tzu-Yen Weng, Jung-Hui Tsai, and Der-Feng Guo, "An AlGaAs/GaAs/InAlGaP optoelectronic switch, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2006), pp. 94-97, Perth, Australia, 2006. [EI]
[33]  Jung-Hui Tsai, "An InGaP/GaAs/InGaAs heterojunction bipolar transistor with step-emitter structure, " Journal of Kaohsiung Normal University, Vol. 21, pp. 37-54, 2006.
[34]  Jung-Hui Tsai, "Multiple negative differential resistances of InP/InGaAs resonant tunneling diode with split miniband structures, " Journal of Kaohsiung Normal University, Vol. 21, pp. 55-66, 2006.
[35]  Jung-Hui Tsai, Tzu-Yen Weng, Yu-Chi Kang, Ching-Han Wu, I-Hsuan Hsu, and Wen-Chau Liu, "An InP/InGaAs pnp heterostructure-emitter bipolar transistor with high current gain and low offset voltage, " International Electronics Devices and Materials Symposia (IEDMS 2006), pp.119-120, Tainan, Taiwan, 2006.
[36]  P. H. Lai, J. H. Tsai, S. I. Fu, Y. Y. Tsai, C. W. Hung, and W. C. Liu, "Characteristics of a heterostructure field-effect transistor (HFET) with sulfur passivation on gate surface, " International conference on processing & manufacturing of advanced materials (THERMEC'2006), pp. 481, Vancouver, Canada, 2006.
[37]  Shao-Yen Chiu, Wen-Shiung Lour, Jung-Hui Tsai, and Yu-Chi Kang, "High-performance InGaP/GaAs pnp d-doped heterojunction bipolar transistor, "The 6th International Workshop on Junction Technology (IWJC), pp.280-282, Shanghai, China, 2006. [EI]
[38]  Jung-Hui Tsai, Yu-Chi Kang, Tzu-Yen Weng, and I-Hsuan Hsu, "Fabrication and Performance of GaAs Double Camel-Like Gate FET with Extremely High Gate Turn-on Voltage, " The 6th International Workshop on Junction Technology (IWJC), pp.287-290, Shanghai, China, 2006. [EI]
[39]  Jung-Hui Tsai, Ssu-I Fu, Po-Hsien Lai, Yan-Ying Tsai, Ching-Wen Hung, and Wen-Chau Liu, "Performance improvement of an InGaP/GaAs heterojunction bipolar transistor (HBT) with surface sulfur treatments, " International Conference on Processing & Manufacturing of Advanced Materials, Vancouver, Canada, 2006.
[40]  Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, and Tzu-Yen Weng, "High-performance InP/InGaAs pnp heterostructure-emitter bipolar transistor, " Electronics Devices and Materials Symposia (EDMS), p. 57, Kaohsiung, Taiwan, 2005.
[41]  Yan-Ying Tsai, Jung-Hui Tsai, Hon-Rung, Wei-His Hsu, Po-Hsien Lai, Ssu-I Fu, and Wen-Chau Liu, "Hydrogen sensing responses of a Pt-InAlP metal-oxide-semiconductor (MOS) diode, " The 6th East Asian Conference on Chemical Sensors (EACCS-6), Guilin, China, 2005.
[42]  Jung-Hui Tsai and Yu-Chi Kang, "Extremely high gate turn-on voltage of GaAs double camel-like gate field-effect transistor, " European Gallium Arsenide and other Compound Semiconductors Application Symposium, pp. 169-172, France, 2005. [EI]
[43]  Jung-Hui Tsai, Yu-Chi Kang, and Wen-Shiung Lour, "InP/InGaAs resonant tunneling diode with six-route negative differential resistances, " European Gallium Arsenide and other Compound Semiconductors Application Symposium, pp. 421-423, France, 2005. [EI]
[44]  Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, and King-Poul Zhu, "Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches, " 7th International Conference on Solid-State and Integrated Circuits Technology, vol. 3, pp. 2305-2308, Beijing, China, 2004. [EI]
[45]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor, " Proceedings of the 34th European Solid-State Device Research Conference, ESSCIRC2004, pp. 437-440, 2004 [EI]
[46]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "On the multiple-state switches of an InGaP/GaAs double heterostructure-emitter bipolar transistor, " Electrochemical Society, v 2, State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II-Proceedings of the International Symposium, pp. 133-136, 2004 [EI]
[47]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "High gate turn-on voltages of InGaP/InGaAs camel-gate n-and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD, " The 5th International Vacuum Electron Sources Conference, Sept. pp.368-370, Beijing, China, 2004. [EI]
[48]  Jung-Hui Tsai, Ying-Cheng Chu, King-Poul Zhu, and Shao-Yen Chiu, "Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD, " The 5th International Vacuum Electron Sources Conference, Sept. p.371, Beijing, China, 2004. [EI]
[49]  Jung-Hui Tsai, King-Poul Zhu, Shih-Wei Tan, and Wen-Shiung Lour, "On the negative differential resistance of AlInAs/GaInAs delta-doped HEMT for logic application, " The Sixteenth International Conference on Indium Phosphide and Related Materials (IPRM), pp. 209-212, Kagoshima, Japan, 2004. [EI]
[50]  Jung-Hui Tsai, Shao-Yen Chiu, Ying-Cheng Chu, and King-Poul Zhu, "A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor, " The 4th International Workshop on Junction Technology (IWJC), pp.224-227, Shanghai, China, 2004. [EI]
[51]  Jung-Hui Tsai, Shao-Yen Chiu, Ying-Cheng Chu, and King-Poul Zhu, "Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor, " The 4th International Workshop on Junction Technology (IWJC), pp.217-219, Shanghai, China, 2004. [EI]
[52]  Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, and Shao-Yen Chiu, "Investigation of InP/InGaAs superlattice-emitter heterojunction bipolar transistor (HBT), " Electronics Devices and Materials Symposia (EDMS), pp. 367-369, Keelung, Taiwan, 2003.
[53]  Jung-Hui Tsai, Ying-Cheng Chu, Shao-Yen Chiu and King-Poul Zhu, "Multiple negative differential resistance of superlattice-emitter resonant tunneling bipolar transistor by high-field domain, " Electronics Devices and Materials Symposia (EDMS), pp. 561-564, Keelung, Taiwan, 2003.
[54]  Jung-Hui Tsai, Yu-Jui Chu and Jeng-Shyan Chen, "InP/GaInAs d-doped heterojunction bipolar transistors with high current gain, low offset voltage, " Electronics Devices and Materials Symposia (EDMS), pp. 299-302, Keelung, Taiwan, 2003.
[55]  Jung-Hui Tsai, Jeng-Shyan Chen and Yu-Jui Chu, "A modeling approach to high-performance InGaP/GaAs camel-gate δ-doping field effect transistors, " Electronics Devices and Materials Symposia (EDMS), pp. 425-428, Keelung, Taiwan, 2003.
[56]  Jung-Hui Tsai and King-Poul Zhu, "High-performance InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor, " Proc. Military Symposium on Fundamental Science, EEB.101-106, Kaohsiung, Taiwan, ROC, 2003.
[57]  Wen-Chau Liu, Jung-Hui Tsai, Wen-Lung Chang, Kuo-Hui Yu, and Kun-Wei Lin, "High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations, " Knowledge Bridge, no. 25, pp. 2, 2002.
[58]  Jung-Hui Tsai, Ming-Jui Lin and King-Poul Ge, "InGaP/InGaAs/GaAs single d-doped pseudomorphic high electron mobility transistor with high barrier camel gate, " International Electronics Devices and Materials Symposia (IEDMS 2002), pp.148-150, Taipei, Taiwan, 2002.
[59]  Jung-Hui Tsai, King-Poul Ge, and Ming-Jui Lin, "A New InP/InGaAs d-doped heterojunction bipolar transistor, " International Electronics Devices and Materials Symposia (IEDMS 2002), pp.60-62, Taipei, Taiwan, 2002.
[60]  Jung-Hui Tsai, "Performance of InGaP/InGaAs/GaAs camel-gate single d-doping pHEMT, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2002), pp. 369-372, Sydeny, Australia.
[61]  Jung-Hui Tsai, "Integrated fabrication of InGaP/GaAs d-doped Heterojunction bipolar transistor and doped-channel field effect transistor, " Conference on optoelectronic and microelectronic materials and devices (COMMAD 2002), pp. 365-368, Sydeny, Australia.
[62]  Jung-Hui Tsai and Jeng-Shyan Chen "High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure", 26th International Conference on the Physics of Semiconductors, Scotland, UK, 2002.
[63]  Jung-Hui Tsai, Jeng-Shyan Chen, and Yu-Jui Chu, "d-Doping Field-Effect Transistors with an InGaP/GaAs Camel-Gate Structures", Proc. Military Symposium on Fundamental Science, CP.32-35, Kaohsiung, Taiwan, ROC, 2002.
[64]  Jung-Hui Tsai, "Perfromances of InGaP/GaAs Camel-Gate Field Effect Transistor with Double d-Doping Channels, " Electronics Devices and Materials Symposia (EDMS), pp.496-499, Kaoshiung, Taiwan, 2001.
[65]  Jung-Hui Tsai, "Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor, " Electronics Devices and Materials Symposia (EDMS), pp.492-495, Kaoshiung, Taiwan, 2001.
[66]  Jung-Hui Tsai, "High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels, International Conference on Solid State Device and Materials (SSDM2000).
[67]  Jung-Hui Tsai, "High-Performance InGaP/GaAs Camel-Gate Transistor with d-Doping Sheets, " Symposium on Nano Device Technology, pp. 52-55, Taiwan, Hsinchu, 2000.
[68]  Jung-Hui Tsai, "Quantized Behaviors of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors (HBT's), " Symposium on Nano Device Technology, pp.251-254, Taiwan, Hsinchu, 2000.
[69]  Jung-Hui Tsai, "Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT), " 12 th International Conference on Ternary and Multinary Compounds (ICTMC-12), P2-75, Taiwan, Hsinchu, 2000.
[70]  Jung-Hui Tsai, "On the Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor, " 3 th International Conference on Low Dimensional Structures and Devices (LDSD'99), Antalya, Turkey.
[71]  Jung-Hui Tsai, "A New AlGaAs/GaAs/InGaAs Pseudomorphic Heterostructure with Multiple S-shaped Switching Phenomena", 3 th International Conference on Low Dimensional Structures and Devices (LDSD'99), Antalya, Turkey.
[72]  Jung-Hui Tsai, "Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena", Proc. Military Symposium on Fundamental Science, Kaohsiung, Taiwan, ROC, 1999.
[73]  Jung-Hui Tsai, "Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base", Proc. Military Symposium on Fundamental Science, Kaohsiung, Taiwan, ROC, 1999.
[74]  Jung-Hui Tsai, "Surface Recombination Effect in GaAs-Based Heterostructure-Emitter and Heterostructure-Base Transistors (HEHBT's) ", 34th Intersociety Energy Conversion Engineering Conference, Vancouver, British Columbia, 1999.
[75]  Jung-Hui Tsai, "High Breakdown-Voltage and high-linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels", 34th Intersociety Energy Conversion Engineering Conference, Vancouver, British Columbia, 1999.
[76]  Jung-Hui Tsai, "Evaluations of AlInAs/GaInAs Heterostructure-Emitter-Confinement Bipolar Transistors", 8th international symposium on passivity of metal and semiconductors, Jasper, Alberta, Canada, 1999.
[77]  Jung-Hui Tsai, "AlGaAs/GaAs/InGaAs Resonant Tunneling Bipolar Transistor with Untrathin Base Layer", Conference on optoelectronic and microelectronic Materials and devices (COMMAD'98), Perth, Australia. [EI]
[78]  Jung-Hui Tsai, "Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT)", Conference on optoelectronic and microelectronic Materials and devices (COMMAD'98), Perth, Australia. [EI]
[79]  Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Jing-Yuh Chen, Po-Hung Lin, and, Wei-Chou Wang, "Multiple-State Switching (MSS) Phenomenon of AlGaAs/InGaAs/GaAs Hetrostructure", Electronics Devices and Materials Symposia (EDMS'97), pp.471-474, Taiwan.
[80]  Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, and Jing-Yuh Chen, " A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT), Europen Solid-State Research Conference (ESSDERC'97), Stuttgart, Germany. [EI]
[81]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, and Chin-Chuan Cheng, "InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE, " (ICMOVPE VIII'96), OCSP.8, Cardiff, Wales, UK.
[82]  Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, Jing-Yuh Chen, "Multiple Negative-Differential-Resistance (MNDR) of a Graded-AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs Base Structure, " (SOTAPOCS'97), pp. 263-268, Canada, Montreal.
[83]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Jing-Yuh Chen, Wei-Chou Wang, and Po-Hung Lin, "Investigation of step doped channel heterostructure field-effect transistor, " Conference on optoelectronic and microelectronic Materials and devices (COMMAD'96), PSM-47, Canberra, Australia.
[84]  Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, H. R. Chen, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, and Jing-Yuh Chen, "A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT's), " Conference on optoelectronic and microelectronic materials and devices (COMMAD'96), PSM-46, Canberra, Australia. [EI]
[85]  Wen-Chau Liu, Jung-Hui Tsai, H. R. Chen, Lih-Wen Laih, and Shiou-Ying Cheng, "On the recombination currents effect of heterostructure-emitter bipolar transistors, " Conference on optoelectronic and microelectronic and devices (COMMAD'96), PSM-45, Canberra, Australia. [EI]
[86]  Wen-Chau Liu, Kong-Beng Thei, Jung-Hui Tsai, Chin-Chuan Cheng, Kun-Wei Lin, Wen-Shiung Lour, and and H. R. Chen, "Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's), " IEEE International conference on semiconductor electronics (ICSE'96), Penang, Malaysia.
[87]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Wen-Shiung Lour, and Kun-Wei Lin, and Chin-Chuan Cheng, "Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application, " The International Association of Science and Technology for Development IASTED'96, pp.62-65, Banff, Alberta, Canada, 1996.
[88]  Wen-Chau Liu, Jung-Hui Tsai, Wen-Shiung Lour, and Kun-Wei Lin, and Chin-Chuan Cheng, "High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications, " The International Association of Science and Technology for Development IASTED'96, pp.58-61, Banff, Alberta, Canada, 1996.
[89]  Wen-Chau Liu, Jung-Hui Tsai, Kong-Beng Thei, Chin-Chuan Cheng, Kun-Wei Lin, and H. R. Chen, "Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD, " Europen Gallium Arsenide and Related III-V Compounds Applications Symposium GAAS'96, Paris, France, 1996.
[90]  Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, and H. R. Chen, 1996, "Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet, " Europen Gallium Arsenide and Related III-V Compounds Applications Symposium GAAS'96, Paris, France, 1996.
[91]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Chin-Chuan Cheng, and Kun-Wei Lin, " A new multiple negative-differential-resistance (MNDR) device with AlGaAs/step-graded InxGa1-xAs quantum well/GaAs structure, " IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996.
[92]  Wen-Chau Liu, Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Chin-Chuan Cheng, and Kun-Wei Lin, "A new heterostructure-base bipolar transistor with multiple negative-differential-resistance, " IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996.
[93]  Wen-Shiung Lour, Jung-Hui Tsai, and Wen-Chau Liu, 1996, "A new InGaP/GaAs DHBT with delta-sheet and application to power transistors, " IEEE SIMC-9, Toulouse, France, April 29/May 3, 1996.
[94]  Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, and H. R. Chen, 1996, " High-performance InGaP/GaAs single-heterojunction bipolar transistor by d-doped sheet, " CJMW'96, China-Japan Joint Meeting on Microwaves, Hefei, China.
[95]  Wen-Chau Liu, Jung-Hui Tsai, Kong-Beng Thei, Kun-Wei Lin, Chin-Chuan Cheng, and H. R. Chen, 1996, "On the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped negative-differential-resistance, " CJMW'96, China-Japan Joint Meeting on Microwaves, Hefei, China.
[96]  Wen-Chau Liu, Wen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, and Rong-Chau Liu, 1995 "MBE grown GaAs tri-step doping channel camel-gate FET, " Asia-Pacific Microwave Conference, pp.577-580, Kaist, Taejon, Korea.
[97]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Cheng-Zu Wu, Kong-Beng Thei, Wen-Shiung Lour, and Rong-Chau Liu, 1995 " Negative-differential-resistorance (NDR) field-effect transistor with n--GaAs/n+-InGaAs/i-GaAs doping-channel structure, " International Laser, Lightwave and Microwave Conference, pp.54-57, Shanghai, China.
[98]  Der-Feng Guo, Lih-Wen Laih, Jung-Hui Tsai, and Wen-Chau Liu, 1995 "Application of InGaAs-GaAs delta-doped quantum wells to bolk-barrier switching devices, " International Laser, Lightwave and Microwave Conference, pp.50-53, Shanghai, China.
[99]  Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, and Rong-Chau Liu, 1995 "Fabrication and analysis of camel-gate field-effect transistors (CAMFET's) with active doping channel profiles, " pp.42-45, International Laser, Lightwave and Microwave Conference, Shanghai, China.
[100]  Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, 1995, "Linear and enhanced transconductance using high-medium-low doping channel, " 25th Europen Solid State Device Research Conference, pp.177-180, The Hague-the Nethlands.
[101]  Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, Yuan-Tzu and Rong-Chau Liu, 1995, "GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET), " IEEE TENCON'95 on Microelectronics and VLSI, pp.103-106, Hong Kong Convention & Exibition Centre, Hong Kong.
[102]  Wen-Shiung Lour, Wen-Chau Liu, Jung-Hui Tsai, and Lih-Wen Laih, 1995, "Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer, " IEEE TENCON'95 on Microelectronics and VLSI, pp.95-98, Hong Kong Convention & Exibition Centre, Hong Kong.
[103]  Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Kong-Beng Thei, Cheng-Zu Wu, Wen-Shiung Lour, Yuan-Tzu and Rong-Chau Liu, 1995, "GaAs tristep low-low doping channel field effect transistor, " IEEE TENCON'95 on Microelectronics and VLSI, pp.107-110, Hong Kong Convention & Exibition Centre, Hong Kong.