American Journal of Materials Science

American Journal of Materials Science publishes reviews, full-length papers, and short communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials.

Fong Kwong Yam

Senior Lecturer, Universiti Sains, Malaysia

Research Areas

III-Nitrides, Metal-oxides, nano-scaled materials, porous materials

Education

2002-2007 Ph.D.Solid State Physics, Universiti Sains Malaysia, Penang, Malaysia
1997-1999M.Sc.Materials Science and Engineering, National University of Singapore, Singapore.
1988-1992B.Sc.Physics, Universiti Sains Malaysia, Penang, Malaysia.

Experience

2007-PresentSenior Lecturer, Universiti Sains Malaysia (USM), School of Physics, Penang, Malaysia
2002-2006Research Officer, Universiti Sains Malaysia, School of Physics, Penang, Malaysia
2000-2002Engineer, Seiko Instruments (S) Pte. Ltd., Singapore
1994-2000Engineer, Transtech Electronics (S) Pte Ltd, Singapore

Academic Achievement

2004, Sanggar Sanjung (Hall of Fame) Award (USM)
2005, Sanggar Sanjung (Hall of Fame) Award (USM)
2006, Merit Award (USM)
2007, Sanggar Sanjung (Hall of Fame) Award (USM)
2008, Merit Award (USM)
2009, Merit Award (USM)
2010, Sanggar Sanjung (Hall of Fame) Award (USM)
2011, Bronze medal for product competition in Malaysia Technology Exhibition

Membership

A registered member of Atomic Energy Licensing Board (AELB), under Ministry of Science, Technology and Innovation, Malaysia

Publications: Journals

[1]  "Microcrystalline GaN film grown on Si (100) and its application to MSM photodiode", Z. Hassan, Y. C. Lee, F. K. Yam, M. J. Abdullah, K. Ibrahim, M. E. Kordesch, Mater. Chem. Phys. Vol. 84, 371 (2004).
[2]  " High temperature structural and electrical behavior of metal contacts on n-type GaN", F. K. Yam, P. A. Teoh, Z. Hassan , Proceeding of 6th International Conference on Electronic Materials and Packaging", 188-191 (2004).
[3]  "Electrical properties of Ti/Ag contacts to n-type Al0.1Ga0.9N", S. Othman, F.K. Yam, Z. Hassan, IEEE International Conference on Semiconductor Electronic Proceedings, 213-217 (2004).
[4]  " Multi layer metallization scheme (Ni/Pd/Ag) ohmic contact on p-type GaN", C. W. Lim, C. K. Tan, A. Abdul Aziz, Z. Hassan, F. K. Yam, IEEE International Conference on Semiconductor Electronic Proceedings, 232-236 (2004).
[5]  "Thermal stability of Ni/Ag contacts on p-type GaN", Z. Hassan, Y. C. Lee, F. K. Yam, Z. J. Yap, N. Zainal, H. Abu Hassan, K. Ibrahim, Physica Status Solidi C, 1(10) 2528-2532 (2004).
[6]  " A comparative study of the characteristics of GaN films grown by MOCVD", F.K. Yam, Z. Hassan, Z. Jamal, A.Jamal, A. Abdul Aziz, M. E. Kordesch, IEEE International conference on Semiconductor Electronic Proceedings, 329-356 (2002).
[7]  "Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures", K.A. Abdullah, M.J. Abdullah, F.K. Yam and Z. Hassan, Microelectronic Engineering, Vol. 81, 201-205 (2005).
[8]  "A Comparative Study of Metal-Semiconductor-Metal (MSM) Photodiodes Based on GaN grown on Silicon", Y. C. Lee, Z. Hassan, F. K. Yam, M. J. Abdullah, K. Ibrahim, M. Barmawi, Sugianto, M. Budiman, P. Ariffin, Appl. Surf. Sci, Vol. 249, Issues 1-4, 91-96 (2005).
[9]  "Characteristics of low-temperature-grown GaN films on Si(111)", Z. Hassan, Y. C. Lee, F. K. Yam, K. Ibrahim, M. E. Kordesch, W. Halverson, P. C. Colter, Solid State Commun. Vol. 133, 283-287 (2005).
[10]  "Effects of post annealing treatments on the characteristics of ohmic contacts on n-type AlGaN", Z. Hassan, F. K. Yam, Y. C. Lee, S. Othman, Proc. SPIE Int. Soc. Opt. Eng., Vol. 5739, 169- 176 (2005).
[11]  "Growth and properties of GaN/Si heterojunction", Z. Hassan, S.S. Ng, G. L. Chew, F.K. Yam, M. J. Abdullah, M. R. Hashim, K. Ibrahim, M. E. Kordesch, Materials Science Forum, 480-481, 531-536 (2005).
[12]  "Characteristics of Ni-based bi-layer contacts on GaN", Z. Hassan, F. K. Yam, W. C. Lim, A.. Abdul Aziz, K. Ibrahim, Materials Science Forum, 480- 481, 525-530 (2005).
[13]  "Low applied bias for p-GaN electroluminescent devices", F. K. Yam, Z. Hassan, C. K. Tan, C. W. Lim, A. Abdul Aziz, K. Ibrahim, Microelectronic Engineering, 81, 268-272 (2005).
[14]  "Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN", Y. Liu, M. Z. Kauser, P. P. Ruden, Z. Hassan, Y. C. Lee, S. S. Ng, and F. K. Yam, Appl. Phys. Lett. 88, 022109 (2006).
[15]  "Electrical characteristics and thermal stability of Ti contact to p-GaN", C. K. Tan, A. Abdul Aziz, Z. Hassan, F.K. Yam, A.Y. Hudeish, phys. stat. sol. (c) Vol. 3, 1762- 1766 (2006).
[16]  "Schottky barrier properties of various metal (Zr, Ti, Cr, Pt) contact on p-GaN revealed from I–V–T measurement", C.K. Tan, A. Abdul Aziz and F.K. Yam, Appl. Surf. Sci., Vol. 252, 5930- 5935 (2006).
[17]  " The Growth of III-V Nitrides Heterostructure on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy", F. K. Yam, Z. Hassan, L. S. Chuah, N. Zainal, C. W. Chin, S. M. Thahab, M. Hussein, IEEE International Conf. on Semiconductor Electronics Proceedings, 928-932 (2006)
[18]  "Epitaixial GaN film grown at low temperature by hydrogen plasma-assisted MOCVD" F. K. Yam, Z. Hassan, H. Abu Hassan, M. E. Kordesech, Materials Sciece Forum, 517, 9-12, (2006).
[19]  " Structural and optical analysis of GaN films grown by low-pressure metalorganic chemical vapor deposition" F. K. Yam, Z. Hassan, H. Abu Hassan, M. E. Kordesech, Materials Sciece Forum, 517, 5-8, (2006).
[20]  "AlGaN metal-semiconductor-metal structure for pressure sensing applications" Z.Hassan, Y.C. Lee, S.S. Ng, F.K. Yam, Y.Liu, Z. Rang, M. Z. Kauser, P. P. Ruden, M. I. Nathan, Physica Status Solidi c, 3(6), 2287- 2290 (2006).
[21]  " The study of thermal treatment on electrical preperties at Cr/p-GaN" C. K. Tan, A. Abdul Aziz, Z. Hassan, F. K. Yam, C. W, Lim, A. Y. Hudeish, Materials Science Forum, 517, 247-251 (2006).
[22]  " Pinning Fermi level of p-GaN due to three different (Zr, Ti, and Cr) metal contacts" , C. K. Tan, A. Abdul Aziz, Z. Hassan, F. K. Yam, C. W, Lim, A. Y. Hudeish, Materials Science Forum, 517, 262-266 (2006).
[23]  " Effect of thermal treatment for Pd and PdSi Schottky contacts on p-GaN", C. K. Tan, A. Abdul Aziz, Z. Hassan, F. K. Yam, C. W, Lim, A. Y. Hudeish, Materials Science Forum, 517, 262-266 (2006).
[24]  "Nanoporous InN films synthesized using photoelectrochamical (PEC) wet etching", L. S. Chuah, Z. Hassan, F. K. Yam, H. Abu Hassan, 2006 IEEE International Conference on Semiconductor Electronics Proceeding, 618-621 (2006)
[25]  "The study of Pt/porous GaN Schottky contact for hydgen sensing", F. K. Yam, Y. P. Ali, Z. Hassan, N. H. Mohd. Noor, C. W. Chin, 2006 IEEE International Conference on Semiconductor Electronics Proceeding, 951-954 (2006)
[26]  "The growth of III – V nitrides heterojunction on Si substrate by plama-assisted molecular beam epitaxy", F. K. Yam, Z. Hassan, L. S. Chuah, N. Zainal, C. W. Chin, S. M. Thahab, M. Hussein, 2006 IEEE International Conference on Semiconductor Electronics Proceeding, 928-932 (2006)
[27]  "The energy bandgap of AlxGa1-xN thin films as a function of Al-mole fraction", S. S. Ng, F. K. Yam, Z. Hassan, H. Abu Hassan, 2006 IEEE International Conference on Semiconductor Electronics Proceeding, 933-937 (2006)
[28]  "Schottky diode based on porous GaN for hydrogen gas sensing application", F.K. Yam, Z. Hassan, Appl. Surf. Sci., Vol. 253, 9525-9528 (2007).
[29]  Investigation of structural and optical properties of nanoporous GaN film", F.K. Yam, Z. Hassan, L.S. Chuah, Y.P. Ali, "Appl. Surf. Sci., Vol 253, 7429-7434 (2007).
[30]  "The study of Pt Schottky contact on porous GaN for hydrogen sensing", F.K. Yam, Z. Hassan and A.Y. Hudeish, Thin Solid Films, Vol. 515, 7337-7341 (2007).
[31]  "Porous GaN Prepared by UV Assisted Electrochemical Etching", F. K. Yam, Z. Hassan, and S. S. Ng, Thin Solid Films, Vol. 515, 3469-3474 (2007).
[32]  "Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts", F.K. Yam, Z. Hassan, Physica B, 403, 3105-3109 (2008)
[33]  "The investigation of dark current reduction in MSM photodetector based on porous GaN", F.K. Yam, Z. Hassan, J. Optoelectron. Adv. Mat. Vol. 10, 396-399 (2008)
[34]  "Growth of III-nitrides on Si(111) BY RF-MBE and its application to MSM photodiodes", L. S. Chuah, Z. Hassan, H. Abu Hassan, F. K. Yam, C. W. Chin, N. M. Ahmed, J. Optoelectron. Adv. Mat. Vol. 10, 569-572 (2008)
[35]  "Effect of zinc on the growth mechanism of zinc oxide nanostructures in the nitrogen environment", K.G. Saw, Y. T. Lim, G. L. Tan, Z. Hassan, K. Ibrahim, F.K. Yam and S.S. Ng, J. Phys. D: Appl. Phys., Vol. 41, 055506 (2008).
[36]  "Structural, optical, and electrical properties of n-type GaN on Si(111) grown by RF-plasma assisted molecular beam epitaxy", C. W. Chin, Z Hassan, F. K. Yam, AIP Conference Proceedings, 1017, 358-362 (2008)
[37]  "Highly Mg-doped GaN thin film grown by RF plasma-assisted molecular beam epitaxy", C. W. Chin, Z. Hassan, F. K. Yam, Optoelectronics and Advanced Materials – Rapid Communications, 2(9), 533-536 (2008).
[38]  " RF-MBE growth of GaN on sapphire for gas sensing application", C. W. Chin, Z. Hassan, F. K. Yam, Journal of Nonlinear Optical Physics and Materials, 17(4), 435-442 (2008)
[39]  "Barrier Height Enhanced GaN Schottky Diodes Using a Thin AlN Surface Layer" L.S. Chuah, Z. Hassan, H.Abu Hassan, F.K.Yam, C.W. Chin, S.M.Thahab, International Journal of Modern Physics B 22 (29), 5167-5173
[40]  "Structural and optical characteristics of Porous GaN generated by electroless chemical etching", F.K. Yam, Z. Hassan, Materials letters, Vol. 64, 724-737 (2009)
[41]  "Structural and optical features of porous silicon prepared by electrochemical anodic etching" L. S. Chuah, Z. Hassan, F. K. Yam, H. Abu Hassan, Surface Review and Letters, 16(1), 93-97 (2009)
[42]  "Structural and optical properties of large scale ZnO nano-wires and nano-sheets prepared by dry thermal oxidation" S. S. Tneh, H. Abu Hassan, K. G. Saw, F. K. Yam, Z. Hassan, Surface Review and Letters 16 (6), 901-904
[43]  "The effects of fluoride-based electrolyte concentrations on the morphology of self-organized titania nanotubes" C.L. Chok, B.L. Ng, F.K. Yam, Optoelectronics and Advanced Materials, Rapid Communications 4 (2), 148-150
[44]  "The structural and optical characterizations of ZnO synthesized using the "bottom-up" growth method " S.S. Tneh, Z. Hassan, K.G. Saw, F.K. Yam, H. Abu Hassan, Physica B: Condensed Matter 405 (8), 2045-2048
[45]  "Growth of zinc oxide nanoflowers by thermal evaporation method " H.I. Abdulgafour, Z. Hassan, N. Al-Hardan, F.K.Yam, Physica B: Condensed Matter 405 (11), 2570-2572
[46]  "Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on poly propylene carbonate (PPC) plastic substrate" N.N. Jandow, F.K.Yam, S.M. Thahab, H. Abu Hassan, K. Ibrahim, Current Applied Physics 10 (6), 1452-1455
[47]  "Ultraviolet photoresponse properties of zinc oxide on type IIb diamond heterojunction" K.G. Saw, S.S. Tneh, F.K. Yam, S.S. Ng, Z. Hassan, Physica B: Condensed Matter 405 (19), 4123-4127
[48]  "Growth of high-quality ZnO nanowires without a catalyst" H.I. Abdulgafour, Z. Hassan, N.H. Al-Hardan, F.K. Yam, Physica B: Condensed Matter 405 (19), 4216-4218
[49]  "The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy" K.P. Beh, F.K. Yam, C.W. Chin, S.S. Tneh, Z. Hassan, Journal of Alloys and Compounds 506 (1), 343-346
[50]  "The characteristics of ZnO deposited on PPC plastic substrate" N.N. Jandow, F.K. Yam, S.M. Thahab, K. Ibrahim, H.A. Hassan, Materials Letters 64 (21), 2366-2368
[51]  "Thermal Degradation of Single Crystal Zinc Oxide and the Growth of Nanostructures" K. G. Saw, G. L. Tan, Z. Hassan, F. K. Yam, S. S. Ng, AIP Conf. Proc. July 7, 2010, Volume 1250, 43-46
[52]  "Fabrication of titanium dioxide nanofibers via anodic oxidation", Applied Surface Science, K.P. Beh, F.K. Yam, S.S. Tneh, Z. Hassan, 257, 4706-4708
[53]  "ZnO nanocoral reef grown on porous silicon substrates without catalyst", H. I. Abdulgafour, F.K. Yam, Z. Hassan, K. Al-Heuseen, M. J. Jawad, Journal of Alloys and Compounds, 509(18), 5627-5630.
[54]  "The effect of growth parameters and mechanism of titania nanotubes prepared by anodic process", S.W. Ng, F.K. Yam, K. P. Beh, S. S. Tneh, Z. Hassan , Optoelectronics and Advanced Materials-Rapid Communications, 5(3), 258-262.
[55]  "Self-assembled ZnO nanostripes prepared by acidified ethanolic anodization", S. W. Ng, F. K. Yam, L. L. Low, K. P. Beh, M. F. Mustapha, E. N. Sota, S. S. Tneh, Z. Hassan, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 5(1), 89-91.
[56]  "Strong Room Temperature 505 nm Emission from Hexagonal Crack Free InGaN Thin Film on Si(111) Grown by MBE", L. S. Chuah, Z. Hassan, C.W. Chin, M. Hussein Mourad, F. K. Yam And S. S. Ng, Composite Interface, 2011, 18,
[57]  "The influence of Ga source and substrate position on the growth of low dimensional GaN wires by chemical vapour deposition", L.L. Low, F.K. Yam, K.P. Beh, Z. Hassan, Applied Surface Science, 257, 10052-10055
[58]  "The growth of heavily Mg-doped GaN thin film on Si substrate by molecular beam epitaxy", C.W. Chin, F.K. Yam, K.P. Beh, Z. Hassan, M.a. Ahmad, Y. Yusof, S.k. Mohd Bakhori , Thin Solid Films, 520, 756-760.
[59]  "The effects of morphological changes on the vibrational properties of self-organized TiO2 nanotubes", F.K. Yam, K.P. Beh, S.W. Ng, Z. Hassan, Thin Solid Films, 520, 807-812.
[60]  "The influence of growth temperatures on the characteristics of GaN nanowires", L.L. Low, F.K. Yam, K.P. Beh, Z. Hassan, Applied Surface Science, 258, 542-546.
[61]  "Enhancing Photoresponse time of low cost Pd/ZnO nanorods prepared by thermal evaporation techniques for UV detection", H.I. Abdulgafour, Z. Hassan, F.K. Yam, K. Al-Heuseen, Y. Yusof, Applied Surface Science, 258, 461-465.
[62]  "Comparative study of the properties of ZnO thin films deposited on poly propylene carbonate (PPC) and glass substrates", N. N. Jandow, H. Abu Hassan, F. K. Yam, K. Ibrahim, Journal of Materials Science, 2011

Publications: Books/Book Chapters

[1]  Chin Che Woei, Zainuriah Hassan, Yam Fong Kwong, 2011, "Study of III-Nitrides Heterostructures Grown by Molecular Beam Epitaxy", Lambert Academic Publishing, ISBN-13: 978-3-8443-9267-8
[2]  Fong Kwong Yam, Li Li Low, Sue Ann Oh & Zainuriah Hassan, GaN: An overview of structural defects , Optoelectronics-Materials and Techniques, InTech, 2011, ISBN: 978-953-307-276-0