American Journal of Materials Science

American Journal of Materials Science publishes reviews, full-length papers, and short communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials.

Oleg Velichko

Editorial Board Member of American Journal of Materials Science

Associate Professor, Department of Physics, Belarusian State University of Informatics and Radioelectronics (BSUIR), Belarus

Research Areas

Theory and Modeling Of Transport Processes and Quasichemical Reactions of Impurity Atoms and Point Defects in the Vicinities of Interfaces and Heterojunctions in Compound Semiconductors, Silicon, and Si/Ge Structures

Education

1997D.ScPhysics of semiconductors and dielectrics, Belarusian State University, Minsk, Belarus
1988Ph.DSolid-state electronics, microelectronics, Institute of Electronics, National Academy of Sciences of Belarus, Minsk, Belarus
1976Diploma EngGraduated from the Department of Radiophysics and Electronics, Belarusian State University, Minsk, Belarus

Experience

2002-presentAssociate Professor, Department of Physics, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
1997-2002Full Professor, Department of Physics, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
1994-1997Associate Professor, Department of Physics, Belarusian State University of Informatics and Radioelectronics , Minsk, Belarus
1993-1994Senior Researcher, Department of Microelectronics, Belarusian State University of Informatics and Electronics (former Minsk Radioengineering Institute), Minsk, Belarus
1990-1993Student at the Department of Special Training for Scientists with High Qualification, Minsk Radioengineering Institute, Minsk, Belarus
1988-1990Researcher, Department of Microelectronics, Minsk Radioengineering Institute, Minsk, Belarus
1976-1987Senior Researcher, Department of Microelectronics, Minsk Radioengineering Institute, Minsk, Belaru
1976-1979Junior Researcher, Laboratory of Contact Phenomena, A.N. Sevchenko Institute of Applied Physical Problems, Belarusian State University, Minsk, Belarus

Academic Achievement

Gold Medal for highest marks at a high school (1970)
Special diploma for high test marks (average 4.9/5.0) when graduating from Belarusian State University (1976)
Article in the Belarusian Encyclopedia (2004, Vol.18, Part 1, Minsk, Belarusian Encyclopedia, p.366)

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  O.I. Velichko, "A set of coupled equations for modeling of radiation-enhanced diffusion of ion-implanted dopants", Radiotechnika i Elektronika (Belarus), Vol.14, pp.91-94 (1985) (in Russian).
[2]  O.I. Velichko, V.A. Labunov, "Model of diffusion of ion-implanted impurities taking into account the effect of radiation defects created by ion implantation on the diffusion process", Soviet microelectronics, Vol.14(6), pp.288-293 (1985).
[3]  O.I. Velichko, "Calculation of ultimate implantation doses under conditions of radiation-enhanced diffusion of implanted impurities", Phys. Chem. and Mech. Surf. (GB) (English translation of Poverhnost'. Fizika, himiya, mehanika), Vol.4(1), pp.165-170 (1986).
[4]  O.I. Velichko, "A mechanism of locally-enhanced impurity diffusion under condition of high concentration doping of silicon by phosphorus", Elektronnaya tehnika. Ser. 2. Poluprovodnikovie pribory (Electronic Technics. Part 2. Semiconductor Devices). Issue 2(187), pp.85-87 (1987) (in Russian).
[5]  O.I. Velichko, B.V. Klimovich, "Procedure for calculation of internal electric fields in modeling the redistribution of ion-implanted impurities in semiconductors", Radioelectronics and Communication Systems (English translation of Izvestiya Vysshikh Uchebnykh Zavedenii Radioelektronika), Vol.31(8), pp. 94-96 (1988).
[6]  V.A. Labunov, O.I. Velichko, "Generalized diffusion equation for impurity atoms in semiconductor crystals", Journal of Engineering Physics (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.57(5), pp.1351-1355 (1990).
[7]  V.N. Abrashin, O.I. Velichko, A.A. Egorov, V.A. Labunov, "Simulation of ion-implanted arsenic redistribution in silicon: Comparison between one-and two-dimensional calculations", Optoelectron. Instrum. Data Process. (English Translation of Avtometriya), No. 2, pp. 67-72 (1992).
[8]  O.I. Velichko, A.A. Egorov, S.K. Fedoruk, "Simulation of silicon diffusion in gallium arsenide: I. Microscopic mechanisms of diffusion and a model of the transitions of silicon atoms among crystal sublattices", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.65(5), pp.1091-1096 (1993).
[9]  O.I. Velichko, A.A. Egorov, S.K. Fedoruk, "Simulation of silicon diffusion in gallium arsenide: 2. Diffusion equation", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.66(1), pp.75-78 (1994).
[10]  O.I. Velichko, A.A. Egorov, S.K. Fedoruk, "Simulation of silicon diffusion in gallium arsenide. 3. The numerical method of solving equation of diffusion", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.66(4), pp.428-433 (1994).
[11]  O.I. Velichko, A.A. Egorov, S.K. Fedoruk, "Simulation of the diffusion of silicon in gallium arsenide: 4. DPSU program and numerical calculation results", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.66(6), pp.648-650 (1994).
[12]  O.I. Velichko, A.A. Egorov, S.K. Fedoruk, "An average migration length of gallium vacancies in gallium arsenide", Dokladi Akademii Nauk Belarusi, Vol.38(1), pp.50-53 (1994) (in Russian).
[13]  V.A. Labunov, O.I. Velichko, S.K. Fedoruk, "Modeling of magnesium diffusion in gallium arsenide. 1. Thermal diffusion of magnesium in compounds, containing aluminium, gallium, and arsenic", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.67(5-6), pp.1067-1070 (1994).
[14]  V.A. Labunov, O.I. Velichko, S.K. Fedoruk, "Modeling of magnesium diffusion in gallium arsenide. 2. Redistribution of an ion-implanted impurity", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.68(1), pp.35-39 (1995).
[15]  O.I. Velichko, F.F. Komarov, N.M. Lukanov, A.N. Muchinskij, N.L. Prokhorenko, V.A. Tsurko, "Modeling of ion-implanted arsenic diffusion in a polysilicon-silicon system", J. Eng. Phys. and Thermophys. (English Translation of Inzhenerno-Fizicheskii Zhurnal), Vol.70(6), pp.988-996 (1997).
[16]  O.I. Velichko and A.K. Fedotov, "A model of coupled diffusion of impurity atoms and point defects in the vicinity of semiconductor interfaces and grain boundaries", Diffusion and Defect Data Pt.B: Solid State Phenomena, Vols. 57-58, pp. 513-518 (1997). http://www.scitec.net
[17]  F.F. Komarov, A.N. Muchinskij, V.A. Tsurko, O.I. Velichko, "Difference schemes for simulation of coupled diffusion of impurities and point defects in semiconductor structures", Second International Conference "Finite-Difference Methods: Theory and Application" (Proceedings), July 1998, Minsk, Belarus, Vol.2. pp.68-74 (1998).
[18]  F. Komarov, O. Velichko, A. Smirnov, "The model of hydrogenezation of amorphous silicon", Proceedings of 7th International Symposium "Advanced Display Technologies", December 1998, Minsk, Belarus, pp.124-128 (1998).
[19]  O.I. Velichko, A.K. Fedotov, "Simulation of point defect diffusion in semiconductors", Solid State Phenomena, Vols.69-70. pp.513-518 (1999). http://www.scitec.net
[20]  O.I. Velichko, V.A. Dobrushkin, V.A. Tsurko, and N.A. Senko, "Simulation of plasma assisted doping of silicon", Proceedings of the Fourth International Conference "Interaction of Radiation with Solids", October 3-5, 2001, Minsk, Belarus, pp.70-72 (2001).
[21]  O. I. Velichko, V.A. Zhuk, and V.A. Tsurko. "Simulation of Nonlinear Processes of Joint Diffusion of Impurity Atoms and Intrinsic Point Defects in Semiconductor Crystals", Engineering Simulation (Gordon and Breach Publishing Group, UK), Vol.18, pp. 557-566 (2001).
[22]  O. I. Velichko, V. A. Dobrushkin, A. K. Fedotov, and V. A. Tsurko, "Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses", Solid State Phenomena, Vols.82-84. pp.569-574 (2002). http://www.scitec.net
[23]  O. I. Velichko, V. A. Dobrushkin, A.N. Muchynskij, V. A. Tsurko, and V.A. Zhuk, "Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain", Journal of Computational Physics 178 (1), pp. 196-209 (2002).
[24]  O. I. Velichko, V. A. Dobrushkin, and V. A. Tsurko, "Diffusion of ion-implanted As in Si: Influence of the elastic stress", Proceedings of the Fifth International Conference "Interaction of Radiation with Solids", October 6-9, 2003, Minsk, Belarus, pp. 226-228 (2003).
[25]  O. I. Velichko, A. K. Fedotov. "The influence of charge states and elastic stresses on the diffusion of point defects in silicon", Materials Science and Engineering B: Solid State Materials for Advanced Technology, Vol.B99(1-3), pp.567-571 (2003). http://www.elsevier.com/locate/mseb
[26]  O. I. Velichko and A. K. Fedotov. "A System of Equations of Coupled Diffusion of Dopant Atoms and Point Defects in Semiconductor Crystals", Nonlinear Phenomena in Complex Systems, Vol.6(2), pp.607-618 (2003). http://www.j-npcs.org
[27]  A.M. Saad, O.I. Velichko, Modeling of silicon atoms diffusion in GaAs in view of nonuniform distribution of point defects", Materials Science in Semiconductor Processing, 7 (1-2), pp.27-33 (2003). http://www.elsevier.com/locate/mssp
[28]  A.K. Fedotov, O.I. Velichko, V.A. Dobrushkin, "Set of equations for stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals", Journal of Alloys and Compounds, 382(1-2), pp.283-287 (2004). http://www.elsevier.com/locate/jallcom
[29]  A.M. Saad, A.K. Fedotov, O.I. Velichko, V.I. Pachynin, A.V. Davydko, "Simulation of Silicon Diffusion in GaAs", Nonlinear Phenomena in Complex Systems, Vol.7(2), pp.186-191 (2004). http://www.j-npcs.org
[30]  O.I. Velichko, V.A. Dobrushkin, L. Pakula, "A model of clustering of phosphorus atoms in silicon", Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol.123(2), pp.176-180 (2005). http://www.elsevier.com/locate/mseb
[31]  O.I. Velichko, Mironov A.M., Tsurko V.A., Zayats G.M. "Simulation of arsenic diffusion during rapid thermal annealing of silicon layers doped with low-energy high-dose ion implantation", Proceedings of the 6-th International Conference "Interaction of Radiation with Solids", September 28-30, 2005, Minsk, Belarus, pp.197-199 (2005).
[32]  F.F. Komarov, O.I. Velichko, A.M. Mironov, V.A. Tsurko, G.M. Zayats, "Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences", Proceedings of SPIE — The International Society for Optical Engineering, Vol.6260, art. no. 62601U pp.566-574 (2006). http://bookstore.spie.org
[33]  A.M. Saad, A.K. Fedotov, O.I. Velichko, V.I. Pachynin, A.V. Davydko, "Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs", Physica Status Solidi (b), Vol.243(12), pp.2665–2671 (2006). www.pss-b.com
[34]  F.F. Komarov, O.I. Velichko, Dobrushkin, A.M. Mironov, "Mechanisms of arsenic clustering in silicon", Phys. Rev. B, Vol.74(3), art. no. 035205 (2006). http://prb.aps.org/
[35]  A. Saad, O.I. Velichko, Yu.P. Shaman, A.V. Mazanik, A.K. Fedotov, V.V. Fedotova, "Modelling of hydrogen diffusion in silicon crystals", Nuclear Instruments and Methods in Physics Research B, Vol.253. pp.118–121 (2006). www.elsevier.com/locate/nimb
[36]  F. F. Komarov, A. M. Mironov, G. M. Zayats, V. A. Tsurko, O. I. Velichko, A. F. Komarov, A. I. Belous, "Two-dimensional modelling of diffusion of low-energy implanted arsenic in silicon at rapid thermal annealing", Vacuum, Vol.81, pp.1184-1187 (2007) www.elsevier.com/locate/vacuum
[37]  O.I. Velichko, N.A. Sobolevskaya, "Analytical solutions for the interstitial diffusion of impurity atoms", Nonlinear Phenomena in Complex Systems. Vol.10, No.4, pp.376-384 (2007). http://www.j-npcs.org
[38]  A. Saad, O.I. Velichko, Yu.P. Shaman, A. Barcz, A Misiuk, A.K. Fedotov, "Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity", Solid State Phenomena. Vols.131-133, pp.425-430 (2008).
[39]  O.I. Velichko, Yu. P. Shaman, A. K. Fedotov, A. V. Masanik, "Set of equations for transient enhanced diffusion in shallow ion-implanted layers" Comput. Mater. Sci. Vol.43, pp.279-285 (2008). www.elsevier.com/locate/commatsci
[40]  O. I. Velichko, "Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species", Philosophical Magazine. Vol.88, No.10, pp.1477-1491 (2008). http://dx.doi.org/10.1080/14786430802192104
[41]  O.I. Velichko, N.A. Sobolevskaya, "Clustering of phosphorus atoms in silicon", Nonlinear Phenomena in Complex Systems. Vol.11, No.3, pp.316-386 (2008). http://www.j-npcs.org
[42]  O.I. Velichko, O.N. Burunova, "Modeling of long-range migration of boron interstitials", Proceedings of the 8-th International Conference "Interaction of Radiation with Solids", September 23-25, 2009, Minsk, Belarus, pp.70-72 (2009) (In Russian).
[43]  O.I. Velichko, N.V. Kniazhava, "Modeling of interstitial diffusion of ion-implanted boron", Proceedings of the 8-th International Conference "Interaction of Radiation with Solids", September 23-25, 2009, Minsk, Belarus, pp.72-75 (2009) (In Russian).
[44]  O.I. Velichko, "Modeling of passivation of electrically active impurities by hydrogen atoms", Proceedings of the 8-th International Conference "Interaction of Radiation with Solids", September 23-25, 2009, Minsk, Belarus, pp.154-156 (2009) (In Russian).
[45]  O. Velichko, O. Burunova, "Clustering of arsenic atoms in silicon during low temperature annealing" Defect and Diffusion Forum. Vols.295-296. pp. 27-32. (2009).
[46]  O.I. Velichko, N.V. Kniazhava, "Modeling of the long-range interstitial migration of ion implanted boron", Comput. Mat. Sci. Vol.48. pp.409–412 (2010).
[47]  O.I. Velichko, Yu.P. Shaman, "Interstitial diffusion under conditions of trapping of interstitial impurity atoms", Materials Science in Semiconductor Processing. No.13. pp.13–20 (2010).
[48]  O.I. Velichko, "Simulation of point defect diffusion in structures with local elastic stresses", Applied Mathematical Modelling. Vol.35. pp.1134-1141 (2011).
[49]  O.I. Velichko, N.A. Sobolevskaya, "Analytical Solution of the Equations Describing Interstitial Migration of Impurity Atoms ", Nonlinear Phenomena in Complex Systems. Vol.14, No.1, pp.70-79 (2011). http://www.j-npcs.org