American Journal of Materials Science

American Journal of Materials Science publishes reviews, full-length papers, and short communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials.

Levan Chkhartishvili

Editorial Board Member of American Journal of Materials Science

Professor, Georgian Technical University, Department of Physics, Georgia

Research Areas

Geometrical and Electronic Structures of Nanosystems Electronic Transport In Dielectrics and Semiconductors Isotopic Effects In Solids


2006Doctor of SciencePhysics & Mathematics (Solid State Physics) Ivane Javakhishvili Tbilisi State University
1989Ph.D Sc.Candidate of Science in Physics & Mathematics (Solid State Physics), Ivane Javakhishvili Tbilisi State University
1980M. Sc.(Theoretical Physics), Ivane Javakhishvili Tbilisi State University


2008-2010Ilia State University Associate Professor
2008-2009Liquid Light Incorporation Laboratories Researcher
2006-presentFerdinand Tavadze Institute of Metallurgy and Materials Science Researcher, Senior Researcher
2005-2009Ltd "IChTU" Associate Professor, Full Professor
1995-1996Hydrometeorology Department of Georgia Expert
1993-1994Ivane Javakhishvili Tbilisi State University Lecturer
1992-presentGeorgian Technical University Assistance Professor, Senior Researcher, Associate Professor, Full Professor
1980-1992Scientific-Industrial Association "Mion"Engineer, Junior Researcher


American Chemical Society-Member
Euro Science-Member

Publications: Conferences/Workshops/Symposiums/Journals/Books

[1]  L. Chkhartishvili, T. Berberashvili, I. Murusidze. On stability of small boron nitride nanotubes//Phys., Chem. & Appl. Nanostr. New Jersey: World Scientific, pp. 126-129 (2011).
[2]  L. Chkhartishvili. Geometrical models for bare boron nanotubes//Phys., Chem. & Appl. Nanostr. New Jersey: World Scientific, pp. 118-121 (2011).
[3]  L. Chkhartishvili, T. Berberashvili. Geometrical model based refinements in nanotube chiral indices//World J. Nano Sci. & Eng., v. 1, n. 2, pp. 45-50 (2011).
[4]  L.S. Chkhartishvili, T.M. Berberashvili. Layers sequences in binary compounds multi-walled nanotubes and multi-shelled fullerenes//Mat. Sci. Nanostr., n. 3, pp. 20-28 (2010).
[5]  T.A. pagava, N.T. Bzhalava, N.I. Maisuradze, D.Z. Khocholava, L.S. Chkhartishvili. Two mechanisms of annealing of divacancies in irradiated n-Si crystals//Ukr. J. Phys., v. 55, n. 11, pp. 1195-2000 (2010).
[6]  L. Chkhartishvili, I. Murusidze. Molar binding energy of zigzag and armchair single-walled boron nitride nanotubes//Mat. Sci. & Appl., v. 1, n. 4, pp. 223-246 (2010).
[7]  L.S. Chkhartishvili. On permittivity of a stacking nano-faulty film//epĂ­toanyag, v. 63, n. 3, pp. 75-82 (2010).
[8]  L. Chkhartishvili, T. Berberashvili. Intra-atomic electric field radial potentials in step-like presentation//J. Electromagn. Anal. & Appl., v. 2, n. 4, pp. 205-243 (2010).
[9]  L. Chkhartishvili. Isotopic effects of boron (Review)//Trends Inorg. Chem., v. 11, pp. 105-167 (2009).
[10]  T. Pagava, L. Chkhartishvili. Impurities' influence on complex defects annealing: Divacancies in silicon//Rad. Eff. & Def. Solids, v. 164, n. 10, pp. 639-646 (2009).
[11]  D. Gabunia, L. Chkhartishvili, O. Tsagareishvili. Thermal switching effect in b-rhombohedral boron//J. Phys.: CS, v. 176, n. 012023, 6 pp. (2009).
[12]  D. Gabunia, O. Tsagareishvili, L. Chkhartishvili, L. Gabunia. Isotopic composition dependences of lattice constant and thermal expansion of b-rhombohedral boron//J. Phys.: CS, v. 176, n. 012022, 10 pp. (2009).
[13]  O. Tsagareishvili, D. Gabunia, L. Chkhartishvili. Anomalously high capacitance of b-rhombohedral boron induced by structural defects//J. Phys.: CS, v. 176, n. 012021, 9 pp. (2009).
[14]  L. Chkhartishvili. Boron nitride nanosystems of regular geometry//J. Phys.: CS, v. 176, n. 012014, 17 pp. (2009).
[15]  L. Chkhartishvili. On quasi-classical estimations of boron nanotubes ground-state parameters//J. Physi.: CS, v. 176, n. 012013, 9 pp. (2009).
[16]  L.S. Chkhartishvili. Equilibrium geometry of boron nitride ultra-small-radius nanotubes//Mat. Sci. Nanostr., n. 1, pp. 33-44 (2009).
[17]  O.A. Tsagareishvili, L.S. Chkhartishvili, D.L. Gabunia. Apparent low-frequency charge capacitance of semiconducting boron//Semicond., v. 43, n. 1, pp. 14-20 (2009).
[18]  L.S. Chkhartishvili, D.L. Gabunia, O.A. Tsagareishvili. Effect of the isotopic composition on the lattice parameter of boron//Powd. Metall. & Met. Cer., v. 47, nn. 9/10, pp. 616-621 (2008).
[19]  P. Kervalishvili, Z. Gogua, L. Chkhartishvili. Novel approach to estimation of ground state energies of shallow and deep donors in tetrahedrally bonded semiconductors//Int. J. Nanosyst., v. 1, v. 1, pp. 99-104 (2008).
[20]  T.A. pagava, L.S. Chkhartishvili, N.I. Maisuradze, E.R. Kutelia. Conversion of divacancies at isochronous annealing of irradiated p-Si crystals//Ukr. J. Phys., v. 52, n. 12, pp. 1162-1164 (2007).
[21]  L.S. Chkhartishvili. Criterion of electric current thermal switching in solids. Mat. Sci.: An Ind. J., v. 3, n. 1, pp. 18-23 (2007).
[22]  L.S. Chkhartishvili, D.L. Gabunia, O.A. Tsagareishvili. Estimation of the isotopic effect on the melting parameters of boron//Inorg. Mat., v. 43, n. 6, pp. 594-596 (2007).
[23]  T. Pagava, L. Chkhartishvili, N. Maisuradze. Concentration of radiation defects with almost isoenergetical levels in silicon//Rad. Eff. & Def. Solids, v. 161, n. 12, pp. 709-713 (2006).
[24]  L. Chkhartishvili. Density of electron states in wurtzite-like boron nitride: A quasi-classical calculation//Mat. Sci.: An Ind. J., v. 2, n. 1, pp. 18-23 (2006).
[25]  L.S. Chkhartishvili. Analytical optimization of the lattice parameter using the binding energy calculated in the quasi-classical approximation//Phys. Solid State, v. 48, n. 5, pp. 846-853 (2006).
[26]  T.A. pagava, E.R. Kutelia, N.I. Maisuradze, B.G. Eristavi, L.S. Chkhartishvili. Influence of the charge state of non-equilibrium vacancies on the formation and annealing kinetics of radiation-induced defects in n-Si//Ukr. J. Phys., v. 50, n. 5, pp. 471-476 (2005).
[27]  L.S. Chkhartishvili. Iterative solution of the secular equation//Math. Notes, v. 77, n. 1, pp. 273-279 (2005).
[28]  L.S. Chkhartishvili. Quasi-classical estimates of the lattice constant and band gap of a crystal: Two-dimensional boron nitride//Phys. Solid State, v. 46, n. 11, pp. 2126-2133 (2004).
[29]  T.A. pagava, L.S. Chkhartishvili. Oscillatory dependence of electron Hall mobility on the annealing temperature for irradiated silicon//Ukr. J. Phys., v. 49, n. 10, pp.1006-1008 (2004).
[30]  L. Chkhartishvili. Quasi-Classical Theory of Substance Ground State. Tbilisi: Technical University Press, 258 pp. (2004).
[31]  L. Chkhartishvili. Quasi-classical approach: Electronic structure of cubic boron nitride crystals//J. Solid State Chem., v. 177, n. 2, pp. 395-399 (2004).
[32]  T.A. pagava, L.S. Chkhartishvili. On electron Hall mobility temperature minima in irradiated silicon//Ukr. J. Phys., v. 48, n. 3, pp. 232-237 (2003).
[33]  L.S. Chkhartishvili. Volume of the intersection of three spheres//Math. Notes, v. 69, n. 3, pp. 421-428 (2001).
[34]  L. Chkhartishvili, D. Lezhava, O. Tsagareishvili. Quasi-classical determination of electronic energies and vibration frequencies in boron compounds//J. Solid State Chem., v. 154, n. 1, pp. 148-152 (2000).