[1] | L. Chkhartishvili, T. Berberashvili, I. Murusidze. On stability of small boron nitride nanotubes//Phys., Chem. & Appl. Nanostr. New Jersey: World Scientific, pp. 126-129 (2011). |
[2] | L. Chkhartishvili. Geometrical models for bare boron nanotubes//Phys., Chem. & Appl. Nanostr. New Jersey: World Scientific, pp. 118-121 (2011). |
[3] | L. Chkhartishvili, T. Berberashvili. Geometrical model based refinements in nanotube chiral indices//World J. Nano Sci. & Eng., v. 1, n. 2, pp. 45-50 (2011). |
[4] | L.S. Chkhartishvili, T.M. Berberashvili. Layers sequences in binary compounds multi-walled nanotubes and multi-shelled fullerenes//Mat. Sci. Nanostr., n. 3, pp. 20-28 (2010). |
[5] | T.A. pagava, N.T. Bzhalava, N.I. Maisuradze, D.Z. Khocholava, L.S. Chkhartishvili. Two mechanisms of annealing of divacancies in irradiated n-Si crystals//Ukr. J. Phys., v. 55, n. 11, pp. 1195-2000 (2010). |
[6] | L. Chkhartishvili, I. Murusidze. Molar binding energy of zigzag and armchair single-walled boron nitride nanotubes//Mat. Sci. & Appl., v. 1, n. 4, pp. 223-246 (2010). |
[7] | L.S. Chkhartishvili. On permittivity of a stacking nano-faulty film//epĂtoanyag, v. 63, n. 3, pp. 75-82 (2010). |
[8] | L. Chkhartishvili, T. Berberashvili. Intra-atomic electric field radial potentials in step-like presentation//J. Electromagn. Anal. & Appl., v. 2, n. 4, pp. 205-243 (2010). |
[9] | L. Chkhartishvili. Isotopic effects of boron (Review)//Trends Inorg. Chem., v. 11, pp. 105-167 (2009). |
[10] | T. Pagava, L. Chkhartishvili. Impurities' influence on complex defects annealing: Divacancies in silicon//Rad. Eff. & Def. Solids, v. 164, n. 10, pp. 639-646 (2009). |
[11] | D. Gabunia, L. Chkhartishvili, O. Tsagareishvili. Thermal switching effect in b-rhombohedral boron//J. Phys.: CS, v. 176, n. 012023, 6 pp. (2009). |
[12] | D. Gabunia, O. Tsagareishvili, L. Chkhartishvili, L. Gabunia. Isotopic composition dependences of lattice constant and thermal expansion of b-rhombohedral boron//J. Phys.: CS, v. 176, n. 012022, 10 pp. (2009). |
[13] | O. Tsagareishvili, D. Gabunia, L. Chkhartishvili. Anomalously high capacitance of b-rhombohedral boron induced by structural defects//J. Phys.: CS, v. 176, n. 012021, 9 pp. (2009). |
[14] | L. Chkhartishvili. Boron nitride nanosystems of regular geometry//J. Phys.: CS, v. 176, n. 012014, 17 pp. (2009). |
[15] | L. Chkhartishvili. On quasi-classical estimations of boron nanotubes ground-state parameters//J. Physi.: CS, v. 176, n. 012013, 9 pp. (2009). |
[16] | L.S. Chkhartishvili. Equilibrium geometry of boron nitride ultra-small-radius nanotubes//Mat. Sci. Nanostr., n. 1, pp. 33-44 (2009). |
[17] | O.A. Tsagareishvili, L.S. Chkhartishvili, D.L. Gabunia. Apparent low-frequency charge capacitance of semiconducting boron//Semicond., v. 43, n. 1, pp. 14-20 (2009). |
[18] | L.S. Chkhartishvili, D.L. Gabunia, O.A. Tsagareishvili. Effect of the isotopic composition on the lattice parameter of boron//Powd. Metall. & Met. Cer., v. 47, nn. 9/10, pp. 616-621 (2008). |
[19] | P. Kervalishvili, Z. Gogua, L. Chkhartishvili. Novel approach to estimation of ground state energies of shallow and deep donors in tetrahedrally bonded semiconductors//Int. J. Nanosyst., v. 1, v. 1, pp. 99-104 (2008). |
[20] | T.A. pagava, L.S. Chkhartishvili, N.I. Maisuradze, E.R. Kutelia. Conversion of divacancies at isochronous annealing of irradiated p-Si crystals//Ukr. J. Phys., v. 52, n. 12, pp. 1162-1164 (2007). |
[21] | L.S. Chkhartishvili. Criterion of electric current thermal switching in solids. Mat. Sci.: An Ind. J., v. 3, n. 1, pp. 18-23 (2007). |
[22] | L.S. Chkhartishvili, D.L. Gabunia, O.A. Tsagareishvili. Estimation of the isotopic effect on the melting parameters of boron//Inorg. Mat., v. 43, n. 6, pp. 594-596 (2007). |
[23] | T. Pagava, L. Chkhartishvili, N. Maisuradze. Concentration of radiation defects with almost isoenergetical levels in silicon//Rad. Eff. & Def. Solids, v. 161, n. 12, pp. 709-713 (2006). |
[24] | L. Chkhartishvili. Density of electron states in wurtzite-like boron nitride: A quasi-classical calculation//Mat. Sci.: An Ind. J., v. 2, n. 1, pp. 18-23 (2006). |
[25] | L.S. Chkhartishvili. Analytical optimization of the lattice parameter using the binding energy calculated in the quasi-classical approximation//Phys. Solid State, v. 48, n. 5, pp. 846-853 (2006). |
[26] | T.A. pagava, E.R. Kutelia, N.I. Maisuradze, B.G. Eristavi, L.S. Chkhartishvili. Influence of the charge state of non-equilibrium vacancies on the formation and annealing kinetics of radiation-induced defects in n-Si//Ukr. J. Phys., v. 50, n. 5, pp. 471-476 (2005). |
[27] | L.S. Chkhartishvili. Iterative solution of the secular equation//Math. Notes, v. 77, n. 1, pp. 273-279 (2005). |
[28] | L.S. Chkhartishvili. Quasi-classical estimates of the lattice constant and band gap of a crystal: Two-dimensional boron nitride//Phys. Solid State, v. 46, n. 11, pp. 2126-2133 (2004). |
[29] | T.A. pagava, L.S. Chkhartishvili. Oscillatory dependence of electron Hall mobility on the annealing temperature for irradiated silicon//Ukr. J. Phys., v. 49, n. 10, pp.1006-1008 (2004). |
[30] | L. Chkhartishvili. Quasi-Classical Theory of Substance Ground State. Tbilisi: Technical University Press, 258 pp. (2004). |
[31] | L. Chkhartishvili. Quasi-classical approach: Electronic structure of cubic boron nitride crystals//J. Solid State Chem., v. 177, n. 2, pp. 395-399 (2004). |
[32] | T.A. pagava, L.S. Chkhartishvili. On electron Hall mobility temperature minima in irradiated silicon//Ukr. J. Phys., v. 48, n. 3, pp. 232-237 (2003). |
[33] | L.S. Chkhartishvili. Volume of the intersection of three spheres//Math. Notes, v. 69, n. 3, pp. 421-428 (2001). |
[34] | L. Chkhartishvili, D. Lezhava, O. Tsagareishvili. Quasi-classical determination of electronic energies and vibration frequencies in boron compounds//J. Solid State Chem., v. 154, n. 1, pp. 148-152 (2000). |